PF08103B [HITACHI]

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone; MOS FET功率放大器模块E- GSM900和DCS1800双频手提电话
PF08103B
元器件型号: PF08103B
生产厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述和应用:

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
MOS FET功率放大器模块E- GSM900和DCS1800双频手提电话

放大器 功率放大器 手提电话 分布式控制系统 GSM DCS
PDF文件: 总7页 (文件大小:37K)
下载文档:  下载PDF数据表文档文件
型号参数:PF08103B参数

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273 ETC

PF08107B

Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, RF-K-8, 10 PIN

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0 HITACHI

PF08107B

880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, RF-K-8, 10 PIN

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1 RENESAS

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41 ETC

PF08107BP

Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, RF-K-8, 10 PIN

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0 HITACHI

PF08109B

MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone

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214 RENESAS

PF08109B-TB

Microwave/Millimeter Wave Amplifier

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100 ETC

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462 ETC

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289 ETC

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346 ETC

PF08127B

MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

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252 RENESAS

PF08127B-TB

暂无描述

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0 RENESAS

PF08134B

MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone

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108 RENESAS

PF083A

General-purpose Relays and Power Relays Sockets

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32 OMRON

PF083A-D

Relay Socket,

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0 OMRON