K1773 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | K1773 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总10页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1773
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-3P
D
1
G
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1773
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
1000
VGSS
±30
V
ID
5
A
1
Drain peak current
ID(pulse)
*
15
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
5
A
Pch*2
Tch
Tstg
100
W
°C
°C
150
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1773
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
1000
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
2.0
—
—
—
—
1.5
±10
250
3.0
2.0
µA
µA
V
VGS = ±25 V, VDS = 0
VDS = 800 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state RDS(on)
resistance
Ω
V
GS = 10 V*1
ID = 3 A
DS = 20 V*1
Forward transfer admittance
|yfs|
3.2
5.0
—
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
—
1700
700
315
25
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = 3 A
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
110
210
135
0.85
VGS = 10 V
RL = 10 Ω
Turn-off delay time
Fall time
Body to drain diode forward
voltage
VDF
IF = 5 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
1050
—
ns
IF = 5 A, VGS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
3
2SK1773
Maximum Safe Operation Area
50
30
Power vs. Temperature Derating
Operationm in this area
is limited by RDS (on)
160
120
80
10
3
1
0.3
40
Ta = 25°C
0.1
0.05
10
10000
30
100
300
1000 3000
0
50
100
150
200
Drain to Source Voltage V DS(V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
10
8
5
4
3
2
1
8 V
10 V
5.5 V
VDS = 10 V
Pulse Test
Pulse Test
6
5 V
4
Tc = 75°C
4 V
25°C
2
–25°C
VGS = 3.5 V
10
Drain to Source Voltage VDS (V)
0
20
30
40
50
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
4
2SK1773
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
20
16
12
8
50
Pulse Test
Pulse Test
20
10
5
5 A
VGS = 10 V
2
4
2 A
1
ID = 1 A
0.5
0.2
8
12
20
0
4
16
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current I D(A)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
8
10
5
Pulse Test
VGS = 10 V
Tc = – 25°C
25°C
2
1
6
75°C
ID = 5 A
4
0.5
2
2 A
1 A
VDS = 10 V
Pulse Test
0.2
0.1
0
–40
0
160
40
80
120
0.05
0.1
0.2
0.5
1
2
5
Case Temperature TC (°C)
Drain Current ID (A)
5
2SK1773
Typical Capacitance vs. Drain
to Source Voltage
Body to Drain Diode Reverse
Recovry Time
5000
10000
2000
1000
Ciss
1000
100
10
500
Coss
Crss
di / dt = 100 A / µs
VGS = 0, Ta =25°C
200
100
VGS = 0
f = 1 MHz
50
0.1
10
0.2
0.5
1
2
5
20
0
10
30
40
50
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Switching Characteristics
1000
800
20
500
16
12
8
200
100
50
VGS
ID = 5 A
tf
tr
VDS
600
400
200
VDD = 250 V
400 V
td (on)
600 V
20
.
VDD = 600 V
=
VGS = 10 V, VDD 30 V
.
4
0
PW = 2 µs, duty < 1%
400 V
250 V
10
5
120
Gate Charge Qg (nc)
0
40
80
160
200
0.1
0.2
0.5
1
2
5
10
Drain Current ID (A)
6
2SK1773
Recerse Drain Current vs. Source
to Drain Voltage
10
8
Pulse Test
6
4
VGS = 10 V
2
0, – 5 V
1.2
Source to Drain Voltage VSD (V)
1.6
0
0.4
0.8
2.0
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D = 1
0.5
1.0
0.3
0.1
0.2
0.1
.
γ
θ ch – c(t) = s(t) θ ch – c
0.05
θ ch – c = 1.25°C / W, Tc = 25°C
0.02
PW
D =
T
PDM
0.03
0.01
0.01
PW
1
T
µ
100 m
µ
10 m
10
100
10
1 m
Pulse Width PW (S)
7
2SK1773
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
D.U.T
Vin
10 %
10 %
R L
10 %
Vout
Vin
10 V
50 Ω
.
=
.
VDD 30 V
90 %
td (off)
90 %
tr
td (on)
tf
8
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code
JEDEC
TO-3P
—
EIAJ
Conforms
Weight (reference value) 5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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