HSB226S [HITACHI]

Silicon Schottky Barrier Diode; 硅肖特基二极管
HSB226S
型号: HSB226S
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Silicon Schottky Barrier Diode
硅肖特基二极管

整流二极管 肖特基二极管 光电二极管
文件: 总5页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HSB226S  
Silicon Schottky Barrier Diode  
ADE-208-961(Z)  
Rev. 0  
Jul. 2000  
Features  
Low reverse current, Low capacitance.  
CMPAK Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HSB226S  
E7  
CMPAK  
Outline  
3
1
2
(Top View)  
1
Cathode 2  
2
3
Anode 1  
Cathode 1  
Anode 2  
HSB226S  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
25  
V
Non-Repetitive peak  
forward surge current  
I
FSM *1 *2  
200  
mA  
forward current  
IF *2  
Tj  
50  
mA  
°C  
Junction temperature  
Storage temperature  
125  
Tstg  
55 to +125  
°C  
Notes: 1. 10msec sine wave 1 pulse  
2. Two device total  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Forward voltage  
VF1  
VF2  
IR  
0.33  
0.38  
V
V
IF = 1 mA  
IF = 5 mA  
Reverse current  
Capacitance  
0.45 µA  
VR = 20 V  
C
2.80 pF  
VR = 1 V, f = 1 MHz  
Note: Per one device  
Rev.0, Jul. 2000, page 2 of 5  
HSB226S  
Main Characteristic  
101  
100  
10-1  
10-4  
Pulse test  
10-5  
Ta=75°C  
Ta=75°C  
Ta=25°C  
10-2  
10-3  
10-4  
10-5  
10-6  
Ta=25°C  
10-6  
10-7  
10-7  
10-8  
10-8  
1.0  
0
0.2  
0.4  
0.6  
0.8  
0
20  
Reverse voltage VR (V)  
Fig.2 Reverse current Vs. Reverse voltage  
40  
10  
30  
Forward voltage VF (V)  
Fig.1 Forward current Vs. Forward voltage  
f=1MHz  
10  
1.0  
0.1  
0.1  
10  
1.0  
Reverse voltage VR (V)  
Fig.3 Capacitance Vs. Reverse voltage  
Rev.0, Jul. 2000, page 3 of 5  
HSB226S  
Package Dimensions  
Unit: mm  
2.0 ± 0.2  
+ 0.1  
+ 0.1  
0.16  
0.3  
0.3  
0.06  
0.05  
0 0.1  
+ 0.1  
0.05  
+ 0.1  
0.05  
0.3  
(0.65) (0.65)  
1.3 ± 0.2  
Hitachi Code  
JEDEC  
CMPAK  
EIAJ  
Conforms  
0.006 g  
Mass (reference value)  
Rev.0, Jul. 2000, page 4 of 5  
HSB226S  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive Whitebrook Park  
Hitachi Europe Ltd.  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 4.0  
Rev.0, Jul. 2000, page 5 of 5  

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