HM62V8128BLFP-12SL [HITACHI]
Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32;型号: | HM62V8128BLFP-12SL |
厂家: | HITACHI SEMICONDUCTOR |
描述: | Standard SRAM, 128KX8, 120ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 静态存储器 光电二极管 内存集成电路 |
文件: | 总18页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HM62V8128B Series
131,072-word × 8-bit High Speed CMOS Static RAM
ADE-203-657B (Z)
Rev. 2.0
Jan. 16, 1997
Description
The Hitachi HM62V8128B is a CMOS static RAM organized 131,072-word × 8-bit. It
realizes higher density, higher performance and low power consumption by employing 0.8
µm Hi-CMOS shrink process technology. It offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. The device, packaged in a 525-mil SOP
(460-mil body SOP) or a 8 mm × 20 mm TSOP with thickness of 1.2 mm, is available for
high density mounting. TSOP package is suitable for cards, and reverse type TSOP is also
provided.
Features
• Single 3 V supply
• Fast access time: 120/150 ns (max)
• Power dissipation:
Active: 18 mW/MHz (typ)
Standby: 3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output. Three state output
• Directry CMOS compatible all inputs and outputs.
• Capability of battery backup operation. 2 chip selection for battery backup
HM62V8128B Series
Ordering Information
Type No.
Access Time
Package
HM62V8128BLFP-12
HM62V8128BLFP-15
120 ns
150 ns
525-mil 32-pin plastic SOP (FP-32D)
HM62V8128BLFP-12SL
HM62V8128BLFP-15SL
120 ns
150 ns
HM62V8128BLT-12
HM62V8128BLT-15
120 ns
150 ns
8 mm × 20 mm 32-pin TSOP (normal-bend type) (TFP-32D)
8 mm × 20 mm 32-pin TSOP (reverse-bend type) (TFP-32DR)
HM62V8128BLT-12SL
HM62V8128BLT-15SL
120 ns
150 ns
HM62V8128BLR-12
HM62V8128BLR-15
120 ns
150 ns
HM62V8128BLR-12SL
HM62V8128BLR-15SL
120 ns
150 ns
2
HM62V8128B Series
Pin Arrangement
HM62V8128BLT Series (Normal Type TSOP)
A11
A9
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
HM62V8128BLFP Series
A8
3
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
4
5
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
WE
A13
A8
NC
A16
A14
A12
A7
6
7
2
8
9
3
10
11
12
13
14
15
16
4
5
A6
6
A1
A6
A5
A2
7
A9
A5
A4
A3
8
A11
OE
A4
(Top view)
9
A3
10
11
12
13
14
15
16
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
A2
HM62V8128BLR Series (Reverse Type TSOP)
A1
A0
A4
A5
16
15
14
13
12
11
10
9
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A3
A2
I/O0
I/O1
I/O2
VSS
A6
A1
A7
A0
A12
A14
A16
NC
VCC
A15
CS2
WE
A13
A8
I/O0
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
I/O7
CS1
A10
OE
8
7
(Top view)
6
5
4
3
A9
A11
2
1
(Top view)
Pin Description
Pin Name
Function
A0 to A16
I/O0 to I/O7
CS1
Address input
Data input/output
Chip select 1
Chip select 2
Write enable
Output enable
No connection
Power supply
Ground
CS2
WE
OE
NC
VCC
VSS
3
HM62V8128B Series
Block Diagram
LSB
A8
V CC
V SS
A13
A4
•
•
•
•
•
A5
A6
Memory matrix
512 x 2,048
Row
decoder
A7
A12
A14
A15
MSB
I/O0
I/O7
•
•
•
•
Column I/O
Input
data
control
Column decoder
LSB
MSB
A0 A1 A2 A3 A10 A11 A9 A16
•
•
CS2
CS1
WE
Timing pulse generator
Read/Write control
OE
4
HM62V8128B Series
Function Table
WE
CS1
H
×
CS2
OE
×
Mode
VCC current
I/O pin
High-Z
High-Z
High-Z
Dout
Ref. cycle
—
×
×
Standby
Standby
Output disable
Read
ISB, ISB1
ISB, ISB1
ICC
×
L
×
—
H
H
L
L
H
H
L
—
L
H
ICC
Read cycle
Write cycle (1)
Write cycle (2)
L
H
H
L
Write
ICC
Din
L
L
H
Write
ICC
Din
Note: ×: H or L
Absolute Maximum Ratings
Parameter
Power supply voltage*1
Terminal voltage*1
Symbol
VCC
Value
Unit
–0.5 to + 4.6
–0.5*2 to VCC + 0.3*3
V
VT
V
Power dissipation
PT
1.0
W
°C
°C
°C
Operating temperature
Storage temperature
Topr
Tstg
Tbias
0 to +70
–55 to +125
–10 to 85
Storage temperature under bias
Notes: 1. Relative to VSS
2. VT min: –3.0 V for pulse half-width ≤ 30 ns
3. Maximum voltage is 4.6 V
Recommended DC Operating Conditions (Ta = 0 to +70˚C)
Parameter
Symbol
Min
Typ
3.0
0
Max
Unit
Supply voltage
VCC
2.7
3.6
V
V
V
V
VSS
0
0
Input voltage
VIH
0.7 × VCC
–0.3 *1
—
VCC + 0.3
0.2 × VCC
VIL
—
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns
5
HM62V8128B Series
DC Characteristics (Ta = 0 to +70°C, VCC = 2.7 V to 3.6 V, VSS = 0 V)
Parameter
Symbol Min
Typ*1
—
Max
Unit
Test conditions
Input leakage current
Output leakage current
|ILI|
—
—
1
µA
Vin = VSS to VCC
|ILO|
—
1
µA
CS1 = VIH or CS2 = VIL or
OE = VIH or WE = VIL,
VI/O = VSS to VCC
Operating power supply
current: DC
ICC
—
—
5
10
25
mA
mA
CS1 = VIL, CS2 = VIH,
Others = VIH/VIL, II/O = 0 mA
Operating power supply
current
ICC1
15
Min. cycle, duty = 100%,
I
= 0 mA, CS1 = VIL, CS2 = VIH,
I/O
Others = VIH/VIL
ICC2
—
6
10
mA
Cycle time = 1 µs, duty = 100%,
I
= 0 mA, CS1 ≤ 0.2 V,
I/O
CS2 ≥ VCC – 0.2 V
VIH ≥ VCC – 0.2 V, V ≤ 0.2 V
IL
Standby power supply
current: DC
ISB
—
—
0.5
1*2
1
mA
(1) CS1 = VIH, CS2 = VIH or
(2) CS2 = VIL
Standby power supply
current (1): DC
ISB1
70*2
µA
0 V ≤ Vin
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS1 ≥ VCC – 0.2 V,
CS2 ≥ VCC – 0.2 V
ISB1
VOL
VOH
—
—
1*3
—
30*3
0.2
—
µA
V
Output voltage
IOL = 100 µA
VCC – 0.2 —
V
IOH = –100 µA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance (Ta = 25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
—
Max
8
Unit
pF
Test Conditions
Vin = 0 V
Input capacitance*1
Cin
—
Input/output capacitance*1 CI/O
—
—
10
pF
VI/O = 0 V
Note: 1. This parameter is sampled and not 100% tested.
6
HM62V8128B Series
AC Characteristics (Ta = 0 to +70°C, VCC = 2.7 V to 3.6 V, unless otherwise noted.)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V
• Input rise and fall time: 5 ns
• Input and output timing reference levels: 1.4 V
• Output load (Including scope and jig)
500
Ω
Dout
50 pF
1.4 V
Read Cycle
HM62V8128B
-12
-15
Min
150
—
—
—
—
15
15
5
Parameter
Symbol
tRC
Min
120
—
—
—
—
10
10
5
Max
—
Max
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Read cycle time
Address access time
Chip selection to output valid
tAA
120
120
120
60
150
150
150
75
tCO1
tCO2
tOE
Output enable to output valid
Chip selection to output in low-Z
tLZ1
—
—
2, 3
tLZ2
—
—
Output enable to output in low-Z
tOLZ
tHZ1
tHZ2
tOHZ
tOH
—
—
2, 3
Chip deselection to output in high-Z
0
40
0
45
1, 2, 3
0
40
0
45
Output disable to output in high-Z
Output hold from address change
0
40
0
45
1, 2, 3
10
—
10
—
7
HM62V8128B Series
Write Cycle
HM62V8128B
-12
-15
Min
150
90
0
Parameter
Symbol
tWC
Min
120
85
0
Max
—
—
—
—
—
—
40
—
—
—
40
Max
—
—
—
—
—
—
45
—
—
—
45
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Write cycle time
Chip selection to end of write
Address setup time
tCW
5
6
tAS
Address valid to end of write
Write pulse width
tAW
85
65
0
90
70
0
tWP
4, 13
7
Write recovery time
tWR
Write to output in high-Z
Data to write time overlap
Data hold from write time
Output active from end of write
tWHZ
tDW
0
0
1, 2, 8
45
0
50
0
tDH
tOW
5
5
2
Output disable to output in High-Z tOHZ
0
0
1, 2, 8
Notes: 1. tHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and
are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low CS1, a high CS2, and a low WE. A write begins at the
latest transition among CS1 going low, CS2 going high, and WE going low. A write ends at the
earliest transition among CS1 going high, CS2 going low, and WE going high. tWP is measured from
the beginning of write to the end of write.
5. tCW is measured from the later of CS1 going low or CS2 going high to the end of write.
6. tAS is measured from the address valid to the beginning of write.
7. tWR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.
8. During this period, I/O pins are in the output state; therefore, the input signals of the opposite phase
to the outputs must not be applied.
9. If CS1 goes low simultaneously with WE going low or after WE going low, the outputs remain in a
high impedance state.
10. Dout is the same phase of the latest written data in this write cycle.
11. Dout is the read data of next address.
12. If CS1 is low and CS2 high during this period, I/O pins are in the output state. Therefore, the input
signals of the opposite phase to the outputs must not be applied to them.
13. In the write cycle with OE low fixed, tWP must satisfy the following equation to avoid a problem of
data bus contention.
tWP ≥ tDW min + tWHZ max
8
HM62V8128B Series
Timing Waveform
Read Timing Waveform (WE = VIH)
t RC
Address
CS1
Address Valid
tAA
tCO1
tHZ1
t LZ1
CS2
OE
tCO2
tLZ2
tHZ2
t OE
tOHZ
tOH
OLZ
t
High Impedance
Dout
Data Valid
9
HM62V8128B Series
Write Timing Waveform (1) (OE Clock)
tWC
Address Valid
tAW
Address
OE
tCW
CS1
CS2
*9
tWR
tWP
tAS
WE
tOHZ
High Impedance
Dout
tDW
tDH
Din
Data Valid
10
HM62V8128B Series
Write Timing Waveform (2) (OE Low Fixed)
tWC
Address
Address Valid
tCW
tWR
CS1
CS2
*9
tAW
tWP
tOH
WE
tAS
tOW
tWHZ
*11
*10
High Impedance
tDW tDH
Dout
Din
*12
Data Valid
11
HM62V8128B Series
Low VCC Data Retention Characteristics (Ta = 0 to +70°C)
Parameter
Symbol
Min Typ*4 Max Unit Test conditions*3
VCC for data retention
VDR
2.0
—
—
V
Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC – 0.2 V
CS1 ≥ VCC – 0.2 V
Data retention current
ICCDR (L version)
—
1
50*1 µA
VCC = 3.0 V, Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ VCC – 0.2 V,
CS1 ≥ VCC – 0.2 V
ICCDR (L-SL version)
tCDR
—
0
1
15*2 µA
Chip deselect to data
retention time
—
—
ns
See retention waveform
Operation recovery time
tR
5
—
—
ms
Notes: 1. This characteristic is guaranteed only for L version, 20 µA max. at Ta = 0 to 40°C.
2. This characteristic is guaranteed only for L-SL version, 3 µA max. at Ta = 0 to 40°C.
3. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer, and Din buffer. If CS2 controls data
retention mode, Vin levels (address, WE, OE, CS1, I/O) can be in the high impedance state. If CS1
controls data retention mode, CS2 must be CS2 ≥ VCC – 0.2 V or 0 V ≤ CS2 ≤ 0.2 V. The other
input levels (address, WE, OE, I/O) can be in the high impedance state.
4. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed.
12
HM62V8128B Series
Low VCC Data Retention Timing Waveform (1) (CS1 Controlled)
Data retention mode
tCDR
tR
VCC
2.7 V
0.7 × VCC
VDR1
CS1
0 V
≥
CS1 VCC – 0.2 V
Low VCC Data Retention Timing Waveform (2) (CS2 Controlled)
tCDR
Data retention mode
tR
VCC
2.7 V
CS2
VDR2
0.2 × VCC
<
<
0 V CS2 0.2 V
0 V
13
HM62V8128B Series
Package Dimensions
HM62V8128BLFP Series (FP-32D)
Unit: mm
20.45
20.95 Max
17
32
14.14 ± 0.30
1.42
1
16
1.0 Max
0 – 8 °
0.10
M
0.8
1.27
+ 0.10
– 0.05
0.40
0.15
14
HM62V8128B Series
HM62V8128BLT Series (TFP-32D)
Unit: mm
8.0
8.2 Max
32
17
1
16
0.5
0.2 ± 0.1
0.08
M
20.0 ± 0.2
0.45 Max
0 – 5 °
0.5 ± 0.1
0.10
15
HM62V8128B Series
HM62V8128BLR Series (TFP-32DR)
Unit: mm
8.0
8.2 Max
32
17
16
1
0.50
0.20 ± 0.10
0.08
M
20.0 ± 0.2
0.45 Max
0 – 5 °
0.10
0.50 ± 0.10
16
HM62V8128B Series
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the
whole or part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from
accidents or any other reasons during operation of the user’s unit according to this
document.
4. Circuitry and other examples described herein are meant merely to indicate the
characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes
no responsibility for any intellectual property claims or other problems that may result
from applications based on the examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of
any third party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in
MEDICAL APPLICATIONS without the written consent of the appropriate officer of
Hitachi’s sales company. Such use includes, but is not limited to, use in life support
systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales
offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Tel: 415-589-8300
Fax: 535-1533
Fax: 415-583-4207
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Berkshire SL6 8YA
United Kingdom
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 0628-585000
Fax: 0628-778322
Tel: 27359218
Fax: 27306071
17
HM62V8128B Series
Revision Record
Rev. Date
Contents of Modification
Drawn by
Approved by
1.0
2.0
Sep. 19, 1996
Jan. 16, 1997
Initial issue
M. Higuchi
K. Imato
Features
Active: 21 mW/MHz(typ) to 18 mW/MHz(typ)
DC Characteristics
ICC typ: 6 mA to 5 mA
ICC1 typ: 20 mA to 15 mA
ICC2 typ: 7 mA to 6 mA
18
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