HM5118165BJ-6 [HITACHI]

1048576-word x 16-bit Dynamic Random Access Memory; 1048576字×16位的动态随机存取存储器

HM5118165BJ-6


型号：	HM5118165BJ-6
厂家：	HITACHI SEMICONDUCTOR
描述：	1048576-word x 16-bit Dynamic Random Access Memory 1048576字×16位的动态随机存取存储器存储内存集成电路光电二极管动态存储器
文件：	总31页 (文件大小：1475K)
下载：	下载PDF数据表文档文件

HM5118165BJ-7

x16 EDO Page Mode DRAM

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3 ETC

HM5118165BJ-7

1048576-word x 16-bit Dynamic Random Access Memory

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11 HITACHI

HM5118165BJ-7

1048576-word x 16-bit Dynamic Random Access Memory

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8 HITACHI

HM5118165BJ-8

1048576-word x 16-bit Dynamic Random Access Memory

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6 HITACHI

HM5118165BJ-8

1048576-word x 16-bit Dynamic Random Access Memory

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14 HITACHI

HM5118165BJ-8

x16 EDO Page Mode DRAM

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7 ETC

HM5118165BJ-8

EDO DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

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0 HITACHI

HM5118165BLJ-6

1048576-word x 16-bit Dynamic Random Access Memory

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9 HITACHI

HM5118165BLJ-7

1048576-word x 16-bit Dynamic Random Access Memory

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16 HITACHI

HM5118165BLJ-7

EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

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0 HITACHI

HM5118165BLJ-8

1048576-word x 16-bit Dynamic Random Access Memory

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31 HITACHI

HM5118165BLTT-6

1048576-word x 16-bit Dynamic Random Access Memory

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14 HITACHI

HM5118165BLTT-6

x16 EDO Page Mode DRAM

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9 ETC

HM5118165BLTT-6

1048576-word x 16-bit Dynamic Random Access Memory

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13 HITACHI

HM5118165BLTT-6

EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

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0 HITACHI

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