HD74LV245T [HITACHI]

Bus Transceiver, LV/LV-A/LVX/H Series, 1-Func, 8-Bit, True Output, CMOS, PDSO20, TSSOP-20;
HD74LV245T
型号: HD74LV245T
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Bus Transceiver, LV/LV-A/LVX/H Series, 1-Func, 8-Bit, True Output, CMOS, PDSO20, TSSOP-20

总线收发器
文件: 总15页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HD74LV245A  
Octal Bus Transceivers with 3-state Outputs  
ADE-205-247 (Z)  
1st Edition  
March 1999  
Description  
The HD74LV245A has eight buffers with three-state outputs in a 20-pin package. When DIR is high, data  
is transferred from the A inputs to the B outputs, and when DIR is low, data is transferred from the B inputs  
to the A outputs. The A and B buses are separated by making the enable input (OE) high level. Low-  
voltage operation is suitable for battery-powered products (e.g., notebook computers), and the low power  
consumption extends the battery life.  
Features  
VCC = 2.0 V to 5.5 V operation  
All inputs VIH (Max.) = 5.5 V (@VCC = 0 V to 5.5 V)  
All outputs VO (Max.) = 5.5 V (@VCC = 0 V)  
Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C)  
Typical VOH undershoot > 2.3 V (@VCC = 3.3 V, Ta = 25°C)  
Output current ±8 mA (@VCC = 3.0 V to 3.6 V), ±16 mA (@VCC = 4.5 V to 5.5 V)  
Function Table  
Inputs  
OE  
L
DIR  
L
Operation  
B data to A bus  
A data to B bus  
Isolation  
L
H
H
X
Note: H: High level  
L: Low level  
X: Immaterial  
HD74LV245A  
Pin Arrangement  
1
2
3
4
5
6
7
8
9
20 VCC  
DIR  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
19  
18  
17  
16  
15  
14  
13  
12  
11  
OE  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
GND 10  
(Top view)  
2
HD74LV245A  
Absolute Maximum Ratings  
Item  
Symbol  
Ratings  
–0.5 to 7.0  
–0.5 to 7.0  
–0.5 to VCC + 0.5  
–0.5 to 7.0  
–20  
Unit  
V
Conditions  
Supply voltage range  
Input voltage range*1  
Output voltage range*1, *2  
VCC  
VI  
V
VO  
V
Output: H or L  
VCC: OFF or Output: Z  
VI < 0  
Input clamp current  
IIK  
mA  
mA  
mA  
mA  
Output clamp current  
IOK  
±50  
VO < 0 or VO > VCC  
VO = 0 to VCC  
Continuous output current  
IO  
±35  
Continuous current through  
ICC or IGND  
±70  
V
CC or GND  
Maximum power dissipation  
PT  
835  
mW  
SOP  
at Ta = 25°C (in still air)*3  
757  
TSSOP  
Storage temperature  
Tstg  
–65 to 150  
°C  
Notes: The absolute maximum ratings are values which must not individually be exceeded, and furthermore,  
no two of which may be realized at the same time..  
1. The input and output voltage ratings may be exceeded even if the input and output clamp-current  
ratings are observed.  
2. This value is limited to 5.5 V maximum.  
3. The data above are measured by VBE method mounting on glass epoxy board (40 × 40 × 1.6  
mm) with 10% of wiring density.  
3
HD74LV245A  
Recommended Operating Conditions  
Item  
Symbol  
VCC  
Min  
2.0  
0
Max  
5.5  
5.5  
VCC  
5.5  
–50  
–2  
Unit  
V
Conditions  
Supply voltage range  
Input voltage range  
Output voltage range  
VI  
V
VO  
0
V
Output: H or L  
0
High impedance state  
VCC = 2.0 V  
Output current  
IOH  
0
µA  
mA  
VCC = 2.3 to 2.7 V  
VCC = 3.0 to 3.6 V  
VCC = 4.5 to 5.5 V  
VCC = 2.0 V  
–8  
–16  
50  
IOL  
µA  
2
mA  
VCC = 2.3 to 2.7 V  
VCC = 3.0 to 3.6 V  
VCC = 4.5 to 5.5 V  
VCC = 2.3 to 2.7 V  
VCC = 3.0 to 3.6 V  
VCC = 4.5 to 5.5 V  
8
16  
Input transition rise or fall rate  
t /v  
200  
100  
20  
ns/V  
0
0
Operating free-air temperature Ta  
–40  
85  
°C  
Note: Unused or floating inputs must be held high or low.  
4
HD74LV245A  
Logic Diagram  
1
2
DIR  
A1  
19  
18  
OE  
B1  
Other seven channels  
5
HD74LV245A  
DC Electrical Characteristics  
Ta = –40 to 85°C  
Item  
Symbol  
VCC (V)*1  
2.0  
Min  
Typ  
Max  
Unit  
Test Conditions  
Input voltage  
VIH  
1.5  
V
2.3 to 2.7  
3.0 to 3.6  
4.5 to 5.5  
2.0  
V
V
V
CC × 0.7  
CC × 0.7  
CC × 0.7  
VIL  
0.5  
2.3 to 2.7  
3.0 to 3.6  
4.5 to 5.5  
V
V
V
CC × 0.3  
CC × 0.3  
CC × 0.3  
Output voltage  
VOH  
Min to  
Max  
VCC –0.1  
V
IOH = –50 µA  
2.3  
3.0  
4.5  
2.0  
2.48  
3.8  
0.1  
IOH = –2 mA  
IOH = –8 mA  
IOH = –16 mA  
IOL = 50 µA  
VOL  
Min to  
Max  
2.3  
0.4  
0.44  
0.55  
±1  
IOL = 2 mA  
3.0  
IOL = 8 mA  
4.5  
IOL = 16 mA  
Input current  
IIN  
0 to 5.5  
5.5  
µA  
µA  
VIN = 5.5 V or GND  
VO = VCC or GND  
Off-state  
IOZ*2  
±5  
output current  
Quiescent  
ICC  
5.5  
0
20  
5
µA  
µA  
pF  
pF  
VIN = VCC or GND, IO = 0  
VO = 5.5 V  
supply current  
Output leakage IOFF  
current  
Input  
CIN  
3.3  
3.3  
3.0  
5.5  
VI = VCC or GND  
VO = VCC or GND  
capacitance  
Output  
CO  
capacitance  
Notes: 1. For conditions shown as Min or Max, use the appropriate values under recommended operating  
conditions.  
2. For I/O ports, the parameter IOZ includes the input leakage current.  
6
HD74LV245A  
Switching Characteristics  
VCC = 2.5 ± 0.2 V  
Ta = 25°C  
Ta = –40 to 85°C  
FROM  
(Input)  
TO  
Item  
Symbol Min Typ  
Max Min  
13.0 1.0  
Max  
Unit Test Conditions  
(Output)  
Propagation  
delay time  
tPLH  
tPHL  
8.3  
15.0  
ns  
CL = 15 pF  
A or B  
B or A  
11.2 15.9 1.0  
11.8 19.9 1.0  
18.0  
22.0  
CL = 50 pF  
CL = 15 pF  
Enable time  
tZH  
tZL  
ns  
OE  
A or B  
14.1 22.7 1.0  
11.8 18.1 1.0  
26.0  
20.0  
CL = 50 pF  
CL = 15 pF  
Disable  
time  
tHZ  
tLZ  
ns  
OE  
A or B  
17.6 23.1 1.0  
25.0  
CL = 50 pF  
VCC = 3.3 ± 0.3 V  
Ta = 25°C  
Ta = –40 to 85°C  
FROM  
(Input)  
TO  
Item  
Symbol Min Typ  
Max Min  
8.4 1.0  
Max  
Unit Test Conditions  
(Output)  
Propagation  
delay time  
tPLH  
tPHL  
5.9  
10.0  
ns  
CL = 15 pF  
A or B  
B or A  
7.9  
8.2  
11.9 1.0  
13.2 1.0  
13.5  
15.5  
CL = 50 pF  
CL = 15 pF  
Enable time  
tZH  
tZL  
ns  
OE  
A or B  
9.9  
9.6  
16.7 1.0  
16.5 1.0  
19.0  
19.5  
CL = 50 pF  
CL = 15 pF  
Disable  
time  
tHZ  
tLZ  
ns  
OE  
A or B  
13.9 19.8 1.0  
22.0  
CL = 50 pF  
7
HD74LV245A  
Switching Characteristics (cont)  
VCC = 5.0 ± 0.5 V  
Ta = 25°C  
Ta = –40 to 85°C  
FROM  
(Input)  
TO  
Item  
Symbol Min Typ  
Max Min  
Max  
Unit Test Conditions  
(Output)  
Propagation  
delay time  
tPLH  
tPHL  
4.3  
5.5  
1.0  
6.5  
ns  
CL = 15 pF  
A or B  
B or A  
5.6  
5.7  
7.5  
8.5  
1.0  
1.0  
8.5  
CL = 50 pF  
CL = 15 pF  
Enable time  
tZH  
tZL  
10.0  
ns  
OE  
A or B  
7.0  
7.8  
10.6 1.0  
12.8 1.0  
12.0  
14.2  
CL = 50 pF  
CL = 15 pF  
Disable  
time  
tHZ  
tLZ  
ns  
OE  
A or B  
10.9 14.7 1.0  
16.0  
CL = 50 pF  
8
HD74LV245A  
Output-skew Characteristics  
CL = 50 pF  
Ta = 25°C  
Ta = –40 to 85°C  
Item  
Symbol VCC (V)  
tsk (O) 2.3 to 2.7  
Min  
Max  
2.0  
1.5  
1.0  
Min  
Max  
Unit  
Output skew  
2.0  
1.5  
1.0  
ns  
3.0 to 3.6  
4.5 to 5.5  
Note: Skew between any outputs of the me package switching in the same direction. This parameter is  
warranted but not production tested.  
Operating Characteristics  
CL = 50 pF  
Ta = 25°C  
Min  
Item  
Symbol VCC (V)  
Typ  
Max  
Unit  
Test Conditions  
Power dissipation  
capacitance  
CPD  
3.3  
20.0  
pF  
f = 10 MHz  
5.0  
25.0  
Noise Characteristics  
CL = 50 pF  
Ta = 25°C  
Item  
Symbol VCC (V)  
Min  
Typ  
Max  
Unit  
V
Test Conditions  
Quiet output, VOL (P)  
maximum  
dynamic VOL  
3.3  
3.3  
3.3  
3.3  
3.3  
0.5  
–0.4  
2.9  
0.8  
–0.8  
Quiet output, VOL (V)  
minimum  
dynamic VOL  
Quiet output, VOH (V)  
minimum  
dynamic VOH  
High-level  
dynamic  
input voltage  
VIH (D)  
2.31  
V
Low level  
dynamic  
VIL (D)  
0.99  
inout voltage  
9
HD74LV245A  
Test Circuit  
VCC  
VCC  
OE  
Input  
Output  
S1  
Pulse generator  
Zout  
A1  
B1  
= 50  
1 kΩ  
OPEN  
GND  
VCC  
S2  
CL=  
15 or 50 pF  
DIR  
TEST  
S2  
tPLH/tPHL  
tZH/tHZ  
tZL /tLZ  
OPEN  
GND  
VCC  
Notes : 1. CL includes the probe and jig capacitance.  
2. A2–B2 to A8–B8 are idential to above load circuit.  
3. S1 : Input–Output change switch.  
10  
HD74LV245A  
• Waveform – 1  
Input  
tr  
tf  
VCC  
0 V  
90%  
50% VCC  
90%  
50% VCC  
10%  
10%  
tPHL  
tPLH  
VOH  
In phase output  
50% VCC  
50% VCC  
VOL  
• Wareform – 2  
tf  
tr  
VCC  
0 V  
90%  
90%  
50% VCC  
10%  
50% VCC  
OE  
10%  
tZL  
tLZ  
VCC  
VOL  
VOH  
0 V  
50% VCC  
Waveform – A  
Waveform – B  
VOL + 0.3 V  
VOH– 0.3 V  
tZH  
tHZ  
50% VCC  
Notes:  
1. Input waveform: PRR 1 MHz, Zo = 50 , tr 3 ns, tf 3 ns  
2. Waveform-A is for an output with internal conditions such that the output is low except when disabled  
by the output control.  
3. Waveform-B is for an output with internal conditions such that the output is high except when disabled  
by the output control.  
4. The output are measured one at a time with one transition per measurement.  
11  
HD74LV245A  
Package Dimensions  
Unit: mm  
12.6  
13 Max  
11  
10  
20  
1
+ 0.20  
7.80  
– 0.30  
0.80 Max  
1.15  
0° – 8°  
1.27  
0.70 ± 0.20  
*0.42 ± 0.08  
0.40 ± 0.06  
0.15  
0.12 M  
Hitachi Code  
JEDEC  
FP-20DA  
EIAJ  
Conforms  
*Dimension including the plating thickness  
Base material dimension  
Weight (reference value) 0.31 g  
12  
HD74LV245A  
Unit: mm  
12.8  
13.2 Max  
11  
10  
20  
1
+ 0.25  
– 0.40  
10.40  
0.935 Max  
1.45  
0° – 8°  
+ 0.57  
– 0.30  
1.27  
0.70  
*0.42 ± 0.08  
0.40 ± 0.06  
0.15  
M
0.12  
Hitachi Code  
JEDEC  
EIAJ  
FP-20DB  
Conforms  
*Dimension including the plating thickness  
Base material dimension  
Weight (reference value) 0.52 g  
13  
HD74LV245A  
Unit: mm  
6.50  
6.80 Max  
20  
11  
1
10  
0.65  
1.0  
+0.08  
–0.07  
*0.22  
0.13  
M
0.20 ± 0.06  
6.40 ± 0.20  
0.65 Max  
0° – 8°  
0.50 ± 0.10  
0.10  
Hitachi Code  
TTP-20DA  
JEDEC  
EIAJ  
*Dimension including the plating thickness  
Base material dimension  
Weight (reference value) 0.07 g  
14  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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