HAT1024R [HITACHI]
Silicon P Channel Power MOS FET High Speed Power Switching; 硅P沟道功率MOS FET高速电源开关
| 型号： | HAT1024R |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HAT1024R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-476 G (Z)
8th. Edition
June 1997
Features
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP–8
5
6
7
8
4
3
2
1
6
5
7 8
D D
D D
4
G
2
G
1, 3
2, 4
Source
Gate
5, 6, 7, 8 Drain
S 3
1
S
MOS2
MOS1
HAT1024R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
–30
VGSS
ID
±20
V
–3.5
A
Note1
Drain peak current
ID(pulse)
–28
A
Body–drain diode reverse drain current IDR
–3.5
A
Channel dissipation
Pch Note2
Pch Note3
2
W
W
°C
°C
Channel dissipation
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2
HAT1024R
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
ID = –10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100µA, VDS = 0
Gate to source leak current
IGSS
—
—
–1.0
—
—
2.5
—
—
—
—
—
—
—
—
—
±10
–10
–2.5
0.16
0.34
—
µA
µA
V
VGS = ±16V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10V, I D = –1mA
ID = –2A, VGS = –10VNote4
ID = –2A, VGS = –4VNote4
ID = –2A, VDS = –10VNote4
VDS = –10V
Zero gate voltege drain current IDSS
—
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
—
RDS(on)
RDS(on)
|yfs|
0.12
0.2
3.5
350
230
75
Ω
Ω
Forward transfer admittance
Input capacitance
S
Ciss
Coss
Crss
td(on)
tr
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
VGS = 0
—
f = 1MHz
18
—
VGS = –4V, ID = –2A
VDD –10V
110
20
—
Turn-off delay time
Fall time
td(off)
tf
—
30
—
Body–drain diode forward
voltage
VDF
–1.0
–1.5
IF = –3.5A, VGS = 0Note4
Body–drain diode reverse
recovery time
trr
—
60
—
ns
IF = –3.5A, VGS = 0
diF/ dt =20A/µs
Note: 4. Pulse test
3
HAT1024R
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
–30
4.0
3.0
2.0
1.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
10 µs
–10
–3
–1
Operation in
this area is
–0.3
–0.1
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
1 Drive Operation
–0.03
–0.01
0
50
100
150
200
–0.1 –0.3
–1 –3
–10 –30 –100
(V)
Drain to Source Voltage
V
DS
Ambient Temperature Ta (°C)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
–20
–16
–12
–8
–20
–16
–12
–8
–10 V
–8 V
Tc = –25 °C
75 °C
Pulse Test
25 °C
–4
–4
V
= –10 V
DS
Pulse Test
V
= –2.5 V
–8 –10
GS
0
0
–2
Gate to Source Voltage
–4
–6
–8
GS
–10
–2
–4
–6
V
(V)
Drain to Source Voltage
V
(V)
DS
4
HAT1024R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
2
–0.5
–0.4
–0.3
–0.2
–0.1
Pulse Test
Pulse Test
1
0.5
I
= –2 A
D
V
GS
= –4 V
–10 V
0.2
0.1
–1 A
0.05
–0.5 A
0.02
–6
Gate to Source Voltage
0
–2
–4
–8
–10
(V)
–0.2
–0.5 –1 –2
Drain Current
–5 –10 –20
V
I
(A)
D
GS
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
10
5
0.5
Pulse Test
Tc = –25 °C
0.4
0.3
0.2
0.1
25 °C
2
1
I
= –2 A
D
75 °C
V
= –4 V
GS
–1 A, –0.5 A
0.5
–2 A, –1 A, –0.5 A
0.2
0.1
–10 V
V
= –10 V
DS
Pulse Test
0
–40
0
40
80
120
160
–0.2 –0.5 –1 –2
–5 –10 –20
Case Temperature Tc (°C)
Drain Current I
(A)
D
5
HAT1024R
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
10000
3000
1000
200
100
50
Ciss
300
100
Coss
20
10
5
Crss
30
10
di / dt = 20 A / µs
= 0, Ta = 25 °C
V
GS
= 0
V
GS
f = 1 MHz
–50
(V)
–0.2 –0.5 –1 –2
Reverse Drain Current
–5 –10
(A)
0
–10
–20
–30
–40
–0.1
I
DR
Drain to Source Voltage V
DS
Reverse Drain Current vs.
Souece to Drain Voltage
Dynamic Input Characteristics
0
–10
–20
–30
0
–20
–16
–12
–8
V
= –5 V
–10 V
–25 V
DD
–4
–8
–12
V
= –5 V
GS
V
GS
V
DS
0, 5 V
V
= –25 V
–10 V
–5 V
DD
–40
–50
–16
–20
–4
Pulse Test
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage (V)
I
= –3.5 A
4
D
0
0
8
12
16
20
Gate Charge Qg (nc)
V
SD
6
HAT1024R
Switching Characteristics
= –4 V, V = –10 V
500
V
DD
GS
PW = 3 µs, duty < 1 %
200
100
50
t
r
t
f
t
t
d(on)
20
10
5
d(off)
–0.1 –0.2 –0.5 –1 –2
–5 –10
(A)
Drain Current
I
D
Switching Time Test Circuit
Switching Time Waveform
10%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
R
L
90%
90%
V
DD
Vin
–4 V
90%
10%
50Ω
= –10 V
10%
Vout
td(off)
td(on)
t
f
tr
7
HAT1024R
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 125 °C/W, Ta = 25 °C
0.01
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D = 1
0.5
1
0.1
0.1
θ
θ
γ
θ
ch – f(t) = s (t) • ch – f
ch – f = 166 °C/W, Ta = 25 °C
0.01
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PW
T
P
DM
D =
0.001
PW
T
0.0001
100 µ
1 m
10 m
100 m
1
10
100
1000
10000
10 µ
Pulse Width PW (S)
8
HAT1024R
Package Dimentions
Unit: mm
5.0 Max
8
5
1
4
6.2 Max
0 – 8°
1.27 Max
1.27
0.51 Max
0.15
0.25
FP–8DA
Hitachi code
—
EIAJ
M
MS-012AA
JEDEC
9
HAT1024R
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(America) Inc.
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Electronic components Group
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
10
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