BB305M [HITACHI]
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier; 打造偏置电路MOS FET的IC UHF / VHF射频放大器
| 型号： | BB305M |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| 文件： | 总12页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB305M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-607C (Z)
4th. Edition
May 1998
Features
•
•
•
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Superior cross modulation characteristics.
High gain; (PG = 28 dB typ. at f = 200 MHz)
Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
Withstanding to ESD;
•
•
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “EW–”.
2. BB305M is individual type number of HITACHI BBFET.
BB305M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
12
Unit
V
Drain to source voltage
Gate1 to source voltage
VG1S
+10
V
–0
Gate2 to source voltage
Drain current
VG2S
ID
±10
V
25
mA
mW
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
150
150
–55 to +150
°C
2
BB305M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max Unit Test Conditions
Drain to source breakdown
voltage
V(BR)DSS 12
—
—
—
—
V
V
V
ID = 200µA, VG1S = VG2S = 0
Gate1 to source breakdown V(BR)G1SS +10
voltage
—
—
IG1 = +10µA, VG2S = VDS = 0
IG2 = ±10µA, VG1S = VDS = 0
Gate2 to source breakdown V(BR)G2SS ±10
voltage
Gate1 to source cutoff current IG1SS
Gate2 to source cutoff current IG2SS
Gate1 to source cutoff voltage VG1S(off)
Gate2 to source cutoff voltage VG2S(off)
—
—
+100 nA
VG1S = +9V, VG2S = VDS = 0
VG2S = ±9V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
—
—
±100 nA
0.4
0.4
2.3
1.1
—
—
1.0
1.0
3.5
1.9
V
—
V
Input capacitance
Output capacitance
ciss
2.8
1.5
pF
pF
coss
VG2S =4V, RG = 82kΩ
Reverse transfer capacitance crss
Drain current ID(op)
0.017 0.04 pF
f = 1MHz
1
2
10
15
13
28
28
28
28
1.4
1.4
20
—
—
—
—
—
1.9
—
mA
mA
mS
mS
dB
VDS = 5V, VG1 = 5V, VG2S = 4V
RG = 82kΩ
ID(op)
—
23
—
24
—
—
—
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 220kΩ
Forward transfer admittance |yfs|1
|yfs|2
VDS = 5V, VG1 = 5V, VG2S =4V
RG =82kΩ, f = 1kHz
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 220kΩ, f = 1kHz
Power gain
PG1
PG2
NF1
NF2
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 82kΩ, f = 200MHz
dB
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 220kΩ, f = 200MHz
Noise figure
dB
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 82kΩ, f = 200MHz
dB
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 220kΩ, f = 200MHz
3
BB305M
Main Characteristics
Test Circuit for Operating Items (I
, |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
V
G2
V
G1
R
G
Gate 1
Source
Gate 2
Drain
A
I
D
Power Gain, Noise Figure Test Circuit
V
G2
V
T
V
T
1000p
1000p
1000p
47k
BBFET
47k
1000p
Output(50 ¶)
47k
L1
1000p
L2
Input(50 ¶)
10p max
1000p
1000p
RFC
1SV70
R
82k
1SV70
36p
G
1000p
Unit @Resistance @( ¶)
@ @ Capacitance @(F)
V
= V
G1
D
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
.
4
BB305M
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
25
20
15
10
5
200
150
100
50
V
V
= 4 V @
G2S
G1
= V
DS
W
180 k
0
0
50
100
150
200
1
2
3
4
5
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
Drain Current vs. Gate1 Voltage
25
20
15
10
5
20
16
12
8
V
= V = 5 V
G1
V
R
= 5 V
DS
= 68 k
DS
W
G
4 V
3 V
2 V
= 1 V
4
V
3
G2S
0
0
1
2
4
(V)
5
0.8
1.6
2.4
3.2
4.0
(V)
Gate1 Voltage
V
Gate2 to Source Voltage
V
G1
G2S
Å@
5
BB305M
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
20
16
12
8
20
16
12
8
V
R
= 5 V
V
R
= 5 V
DS
= 82 k
DS
= 100 k
W
W
G
G
4 V
4 V
3 V
3 V
2 V
2 V
4
4
V
= 1 V
V
3
= 1 V
G2S
G1
G2S
0
0
1
2
3
V
4
(V)
5
1
2
4
(V)
5
Gate1 Voltage
Gate1 Voltage
V
G1
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
30
30
24
18
12
6
V
R
= 5 V
V
R
= 5 V
DS
DS
= 68 k
W
= 82 k
f = 1 kHz
4 V
G
W
G
4 V
f = 1 kHz
24
18
12
6
3 V
3 V
2 V
2 V
V
3
= 1 V
V
= 1 V
G2S
G2S
0
0
1
2
3
4
5
1
2
4
5
Gate1 Voltage
V
G1
(V)
Gate1 Voltage
V
G1
(V)
6
BB305M
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
40
35
30
25
20
30
24
18
12
6
V
R
= 5 V
DS
= 100 k
f = 1 kHz
W
G
4 V
3 V
2 V
V
V
V
= 5 V
= 5 V
DS
G1
15
10
= 4 V
G2S
f = 200 MHz
V
= 1 V
G2S
0
10
20
50 100 200
500 1000
(k W )
1
2
3
4
5
Gate1 Voltage
V
G1
(V)
Gate Resistance
R
G
Noise Figure vs. Gate Resistance
Power Gain vs. Drain Current
4
3
2
40
35
30
25
20
15
10
V
V
V
= 5 V
= 5 V
DS
G1
= 4 V
G2S
f = 200 MHz
V
V
V
R
= 5 V
= 5 V
DS
G1
1
0
= 4 V
G2S
= variable
G
f = 200 MHz
20 25
(mA)
0
10
20
50 100 200
500 1000
(k )
W
G
5
10
15
30
Gate Resistance
R
Drain Current
I
D
7
BB305M
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
4
3
2
1
30
25
20
15
10
V
V
V
R
= 5 V
= 5 V
DS
G1
= 4 V
G2S
= variable
G
f = 200 MHz
V
V
V
= 5 V
= 5 V
DS
5
0
G1
= 4 V
G2S
0
5
10
15
20
25
10
20
50 100 200
500 1000
30
Drain Current
I
(mA)
Gate Resistance
R
(k
)
W
G
D
Input Capacitance vs.
Gate2 to Source Voltage
Gain Reduction vs.
Gate2 to Source Voltage
60
50
40
30
20
10
6
5
4
3
2
1
0
V
V
V
R
= 5 V
= 5 V
DS
G1
= 4 V
G2S
= 82 k
W
G
f = 200 MHz
V
V
R
= 5 V
= 5 V
= 82 k W
DS
G1
G
f = 1 MHz
0
1
2
3
5
4
0
1
2
3
5
4
Gate2 to Source Voltage
V
G2S
(V)
Gate2 to Source Voltage
V
G2S
(V)
8
BB305M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 1 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
–90°
Test Condition :
V
V
= 5 V , V = 5 V
G1
Test Condition :
V
V
= 5 V , V = 5 V
G1
DS
DS
= 4 V , R = 82 k W
= 4 V , R = 82 k W
G2S
G
G2S
G
50 ‘1000 MHz (50 MHz step)
50 ‘1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.002 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–1
–90°
Test Condition :
V
V
= 5 V , V = 5 V
G1
DS
Test Condition :
V
V
= 5 V , V = 5 V
G1
DS
= 4 V , R = 82 k W
G2S
G
= 4 V , R = 82 k W
G2S
G
50 ‘1000 MHz (50 MHz step)
50 ‘1000 MHz (50 MHz step)
9
BB305M
Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 82kΩ, Zo = 50Ω)
S11
S21
MAG
2.69
2.68
2.66
2.62
2.60
2.54
2.47
2.42
2.38
2.32
2.25
2.18
2.12
2.06
2.00
1.94
1.89
1.83
1.78
1.73
S12
S22
f (MHz) MAG
ANG
ANG
174.9
169.3
163.4
157.5
152.0
146.3
140.9
135.7
130.5
125.7
120.8
116.2
111.5
106.8
102.5
98.4
MAG
ANG
91.4
90.5
73.8
74.9
70.1
69.0
63.7
64.8
56.8
58.6
54.4
53.3
49.5
48.6
49.7
51.6
53.3
57.9
72.9
78.9
MAG
0.991
0.992
0.991
0.989
0.985
0.981
0.977
0.973
0.967
0.962
0.957
0.952
0.944
0.939
0.933
0.927
0.921
0.915
0.909
0.904
ANG
–2.2
50
0.991
0.991
0.982
0.975
0.972
0.956
0.942
0.928
0.920
0.906
0.894
0.880
0.868
0.854
0.842
0.835
0.820
0.802
0.801
0.789
–4.8
0.00090
0.00153
0.00243
0.00293
0.00370
0.00444
0.00478
0.00535
0.00551
0.00549
0.00584
0.00542
0.00562
0.00509
0.00465
0.00427
0.00416
0.00289
0.00288
0.00241
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
–9.9
–4.8
–15.4
–20.7
–25.6
–30.6
–35.5
–40.1
–44.9
–49.2
–53.6
–57.8
–62.1
–66.2
–70.3
–73.9
–77.7
–81.5
–84.7
–87.9
–7.5
–9.9
–12.6
–15.0
–17.3
–19.7
–22.0
–24.5
–26.9
–29.2
–31.5
–33.8
–36.1
–38.3
–40.5
–42.7
–44.9
–47.1
94.0
89.6
85.6
82.1
10
BB305M
Package Dimensions
Unit: mm
+ 0.3
– 0.1
2.8
1.9
0.95
0.95
+ 0.1
– 0.06
0.16
+ 0.1
– 0.05
+ 0.1
0.4
0.4
– 0.05
3
4
2
0 ~ 0.1
1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.4
0.6
0.95
1.8
0.85
MPAK–4
SC–61AA
—
Hitachi Code
EIAJ
JEDEC
11
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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