3SK295 [HITACHI]
Silicon N-Channel Dual Gate MOS FET; 硅N沟道双栅MOS FET
| 型号： | 3SK295 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel Dual Gate MOS FET |
| 文件： | 总10页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3SK295
Silicon N-Channel Dual Gate MOS FET
ADE-208-387
1st. Edition
Application
UHF RF amplifier
Features
•
•
Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
Capable of low voltage operation
Outline
MPAK-4
2
3
1
1. Source
2. Gate1
3. Gate2
4. Drain
4
3SK295
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
12
VG1S
VG2S
ID
±8
V
±8
V
25
mA
mW
°C
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
150
150
Tstg
–55 to +150
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
3SK295
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSX 12
Typ
Max
Unit
Test conditions
ID = 200 µA , VG1S = –3 V,
G2S = –3 V
Drain to source breakdown
voltage
—
—
V
V
Gate 1 to source breakdown
voltage
V(BR)G1SS ±8
V(BR) G2SS ±8
—
—
—
—
V
V
IG1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
IG2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
IG1SS
IG2SS
IDS(on)
—
—
—
—
±100
±100
10
nA
nA
mA
VG1S = ±6 V, VG2S = VDS = 0
VG2S = ±6 V, VG1S = VDS = 0
VDS = 6 V, VG1S = 0.5V,
—
0.5
V
G2S = 3 V
Gate 1 to source cutoff voltage VG1S(off)
Gate 2 to source cutoff voltage VG2S(off)
–0.5
0
—
+0.5
+1.0
—
V
VDS = 10 V, VG2S = 3V,
ID = 100 µA
—
V
VDS = 10 V, VG1S = 3V,
ID = 100 µA
Forward transfer admittance
Input capacitance
|yfs|
16
20.8
1.5
mS
pF
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 kHz
Ciss
Coss
1.2
2.2
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 MHz
Output capacitance
0.6
—
0.9
1.2
0.03
—
pF
pF
dB
Reverse transfer capacitance Crss
0.01
19.5
Power gain
PG
16
VDS = 4 V, VG2S = 3V,
ID = 10 mA, f = 900 MHz
Noise figure
NF
—
2.0
3
dB
Note: Marking is “ZQ–”
3
3SK295
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
20
16
12
8
200
150
100
50
Pulse test
V
= 3 V
G2S
1.2 V
1.0 V
0.8 V
0.6 V
4
V
G1S
= 0.4 V
0
2
4
6
8
10
0
50
100
150
200
Drain to source voltage V
(V)
DS
Ambient Temperature Ta (°C)
Drain Current vs. Gate2 to Source Voltage
Drain Current vs. Gate1 to Source Voltage
20
16
12
8
20
16
12
8
2.0 V
V
= 6 V
3.0 V
2.5 V
V
= 6 V
DS
DS
1.5 V
2.0 V
1.5 V
Pulse test
Pulse test
1.0 V
1.0 V
V
G1S
= 0.5 V
4
4
V
= 0.5 V
3
G2S
0
0
1
2
3
4
5
1
2
4
5
Gate2 to source voltage V
(V)
Gate1 to source voltage V
(V)
G2S
G1S
4
3SK295
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Power Gain vs. Drain Current
25
20
15
10
30
24
18
12
6
V
= 6 V
DS
f = 1 kHz
V
= 3.0 V
2.0 V
G2S
2.5 V
1.5 V
1.0 V
V
= 4 V
DS
5
0
V
G2S
= 3 V
f = 900 MHz
0.5 V
0.8
Gate1 to source voltage V
0
20
2.0
(V)
1
2
5
10
0.4
1.2
1.6
Drain current
I
(mA)
D
G1S
Power Gain vs. Drain to Source Voltage
Noise Figure vs. Drain Current
5
4
3
2
25
20
15
10
5
V
= 4 V
= 3 V
DS
V
G2S
f = 900 MHz
V
= 3 V
G2S
1
0
I
= 10 mA
D
f = 900 MHz
0
20
10
1
2
5
10
(mA)
2
4
6 8
Drain current
I
Drain to source voltage
V
DS
(V)
D
5
3SK295
Noise Figure vs. Drain to Source Voltage
5
4
3
2
1
V
= 3 V
= 10 mA
G2S
I
D
f = 900 MHz
0
10
2
4
6 8
Drain to source voltage
V
DS
(V)
6
3SK295
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
Scale: 0.5 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–90°
–1
Condition:
V
= 4 V , V
= 3 V
Condition:
V
= 4 V , V
= 3 V
G2S
DS
G2S
DS
I
= 10 mA , Zo = 50 Ω
I
= 10 mA , Zo = 50 Ω
D
D
100 to 1000 MHz (50 MHz step)
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.002/ div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
150°
4
.2
5
10
.2
.4 .6 .8 1.0 1.5 2 3 4 5 10
0
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–60°
–120°
–.6
–1.5
–.8
–90°
–1
Condition:
V
= 4 V , V
= 3 V
Condition:
V
= 4 V , V
= 3 V
G2S
DS
G2S
DS
I
= 10 mA , Zo = 50 Ω
I
= 10 mA , Zo = 50 Ω
D
D
100 to 1000 MHz (50 MHz step)
100 to 1000 MHz (50 MHz step)
7
3SK295
S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 )
Freq.
(MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
S21
S12
S22
MAG.
0.999
0.998
0.992
0.988
0.985
0.976
0.971
0.964
0.961
0.951
0.949
0.935
0.933
0.923
0.916
0.908
0.900
0.890
0.876
ANG.
–6.1
MAG.
1.98
1.97
1.96
1.96
1.94
1.92
1.91
1.88
1.87
1.86
1.86
1.81
1.78
1.77
1.75
1.72
1.70
1.67
1.65
ANG.
172.2
168.4
165.0
161.0
157.1
153.7
149.9
146.8
142.8
139.4
136.1
132.9
129.4
125.7
122.6
119.1
115.8
112.6
109.3
MAG.
ANG.
79.2
80.4
79.5
79.9
75.2
71.8
70.7
65.5
62.7
66.6
63.8
58.2
60.6
58.5
56.3
56.3
52.9
52.4
51.9
MAG.
0.989
0.987
0.986
0.984
0.981
0.978
0.975
0.972
0.968
0.963
0.960
0.956
0.950
0.945
0.941
0.936
0.930
0.924
0.919
ANG.
–4.2
0.00094
0.00189
0.00230
0.00286
0.00364
0.00353
0.00419
0.00495
0.00509
0.00530
0.00550
0.00601
0.00582
0.00572
0.00553
0.00514
0.00543
0.00506
0.00469
–9.1
–6.1
–11.9
–14.8
–17.9
–20.6
–23.2
–26.3
–29.1
–32.2
–35.0
–37.6
–40.5
–42.9
–45.8
–49.0
–51.2
–54.0
–56.4
–7.9
–9.8
–11.5
–13.4
–15.2
–17.2
–19.1
–20.8
–22.8
–24.5
–26.3
–28.0
–29.9
–31.7
–33.4
–35.2
–37.0
8
Unit: mm
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
+ 0.1
– 0.06
+ 0.1
– 0.05
+ 0.1
– 0.05
0.16
0.4
0.4
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.4
0.6
0.85
0.95
1.8 ± 0.2
Hitachi Code
JEDEC
MPAK-4
—
EIAJ
Conforms
Weight (reference value) 0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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