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3SK290ZJ-UR [HITACHI]

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4;
3SK290ZJ-UR
型号： 3SK290ZJ-UR
厂家： HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述：

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4

晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 栅 放大器
文件： 总9页 (文件大小：92K)
中文：  中文翻译
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3SK290  
Silicon N-Channel Dual Gate MOS FET  
ADE-208-271  
1st. Edition  
Application  
UHF RF amplifier  
Features  
·
Low noise figure.  
NF = 2.3 dB Typ. at f = 900 MHz  
High gain.  
·
PG = 19.3 dB Typ. at f = 900 MHz  
Outline  
CMPAK–4  
2
3
1
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
4
3SK290  
Absolute Maximum Ratings (Ta = 25¡C)  
Item  
Symbol  
VDS  
Ratings  
Unit  
V
Drain to source voltage  
Gate 1 to source voltage  
Gate 2 to source voltage  
Drain current  
12  
VG1S  
VG2S  
ID  
±8  
V
±8  
V
25  
mA  
mW  
°C  
°C  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
100  
125  
Tstg  
–55 to +125  
Attention: This device is very sensitive to electro static discharge.  
It is recommended to adopt appropriate cautions when handling this transistor.  
2
3SK290  
Electrical Characteristics (Ta = 25¡C)  
Item  
Symbol Min  
V(BR)DSX 12  
Typ  
Max  
Unit  
Test conditions  
ID = 200 mA, VG1S = –3 V,  
G2S = –3 V  
Drain to source breakdown  
voltage  
—
—
V
V
Gate 1 to source breakdown  
voltage  
V(BR)G1SS ±8  
V(BR)G2SS ±8  
—
—
—
—
V
V
IG1 = ±10 mA, VG2S = VDS = 0  
Gate 2 to source breakdown  
voltage  
IG2 = ±10 mA, VG1S = VDS = 0  
Gate 1 cutoff current  
Gate 2 cutoff current  
Drain current  
IG1SS  
IG2SS  
IDS(on)  
—
—
—
—
±100  
±100  
10  
nA  
nA  
mA  
VG1S = ±6 V, VG2S = VDS = 0  
VG2S = ±6 V, VG1S = VDS = 0  
VDS = 6 V, VG1S = 0.5 V,  
—
0.5  
V
G2S = 3 V  
Gate 1 to source cutoff voltage VG1S(off)  
Gate 2 to source cutoff voltage VG2S(off)  
–0.6  
0
—
+0.5  
+1.0  
—
V
VDS = 10 V, VG2S = 3 V,  
ID = 100 mA  
—
V
VDS = 10 V, VG1S = 3 V,  
ID = 100 mA  
Forward transfer admittance  
Input capacitance  
|yfs|  
16  
22  
1.8  
mS  
pF  
VDS = 6 V, VG2S = 3 V,  
ID = 10 mA, f = 1 kHz  
Ciss  
Coss  
1.2  
2.2  
VDS = 6 V, VG2S = 3V,  
ID = 10 mA, f = 1 MHz  
Output capacitance  
0.7  
—
1.2  
1.4  
0.03  
—
pF  
pF  
dB  
Reverse transfer capacitance Crss  
0.02  
19.3  
Power gain  
PG  
17  
VDS = 4 V, VG2S = 3 V,  
ID = 10 mA, f = 900 MHz  
Noise figure  
NF  
—
2.3  
2.8  
dB  
Note: Marking is “ZJ–”.  
3
3SK290  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
= 3 V  
20  
16  
12  
8
200  
150  
100  
50  
V
G2S  
1.2 V  
1.0 V  
0.8 V  
0.6 V  
0.4 V  
= 0.2V  
4
V
G1S  
0
50  
100  
150  
200  
0
2
4
6
8
10  
Drain to Source Voltage V  
(V)  
Ambient Temperature Ta (¡C)  
DS  
Drain Current vs.  
Gate 1 to Source Voltage  
Drain Current vs.  
Gate 2 to Source Voltage  
20  
16  
12  
8
20  
16  
12  
8
V
= 6 V  
V
= 6 V  
DS  
1.5 V  
DS  
3.0 V  
2.0 V  
3.0 V  
1.0 V  
2.5 V  
2.5 V  
2.0 V  
1.5 V  
V
G1S  
= 0.5 V  
V
= 1.0 V  
2.4  
G2S  
4
4
0
0
0.8  
1.6  
3.2  
4.0  
(V)  
0.8  
1.6  
2.4  
3.2  
4.0  
Gate 1 to Source Voltage V  
Gate 2 to Source Voltage V  
(V)  
G2S  
G1S  
4
3SK290  
Forward Transfer Admittance  
vs. Gate 1 to Source Voltage  
Power Gain vs. Drain Current  
30  
24  
18  
12  
6
20  
16  
12  
8
V
= 6 V  
DS  
f = 1 kHz  
V
= 3.0 V  
G2S  
2.5 V  
2.0 V  
1.5 V  
1.0 V  
V
= 4 V  
DS  
4
V
G2S  
= 3 V  
f = 900 MHz  
0
2.0  
(V)  
0
4
8
12  
I
16 20  
–0.5  
0
0.5  
1.0  
1.5  
Gate1 to Source Voltage V  
Drain Current  
(mA)  
G1S  
D
Noise Figure vs. Drain Current  
5
4
3
2
1
V
V
= 4 V  
DS  
= 3 V  
G2S  
f = 900 MHz  
0
4
8
12  
16  
(mA)  
20  
Drain Current  
I
D
5
3SK290  
S21 Parameter vs. Frequency  
S11 Parameter vs. Frequency  
Scale: 1 / div.  
1
90¡  
.8  
1.5  
60¡  
.6  
120¡  
2
.4  
3
30¡  
150¡  
4
.2  
5
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
180¡  
0
0¡  
–10  
–5  
–4  
–.2  
–30¡  
–150¡  
–3  
–.4  
–2  
–60¡  
–120¡  
–.6  
–1.5  
–.8  
–90¡  
–1  
Condition: V = 4 V , V  
= 3 V  
Condition: V = 4 V , V  
= 3 V  
G2S  
DS  
G2S  
DS  
I
= 10 mA , Zo = 50 W  
I
= 10 mA , Zo = 50 W  
D
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
S22 Parameter vs. Frequency  
S12 Parameter vs. Frequency  
1
.8  
Scale: 0.002 / div.  
90¡  
1.5  
.6  
60¡  
120¡  
2
.4  
3
4
5
30¡  
150¡  
.2  
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
0
180¡  
0¡  
–10  
–5  
–4  
–.2  
–30¡  
–150¡  
–3  
–.4  
–2  
–.6  
–60¡  
–1.5  
–120¡  
–.8  
–1  
–90¡  
Condition: V = 4 V , V  
= 3 V  
G2S  
= 10 mA , Zo = 50 W  
DS  
Condition: V = 4 V , V  
= 3 V  
G2S  
= 10 mA , Zo = 50 W  
DS  
I
D
I
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
6
3SK290  
S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ½)  
Freq.  
(MHz)  
50  
S11  
S21  
S12  
S22  
MAG.  
0.998  
0.994  
0.997  
0.991  
0.993  
0.980  
0.976  
0.971  
0.962  
0.955  
0.945  
0.939  
0.927  
0.925  
0.911  
0.901  
0.893  
0.881  
0.876  
0.869  
ANG.  
–3.3  
MAG.  
2.17  
2.20  
2.19  
2.17  
2.16  
2.12  
2.10  
2.08  
2.05  
2.03  
1.99  
1.96  
1.93  
1.90  
1.87  
1.84  
1.81  
1.78  
1.75  
1.71  
ANG.  
176  
172  
168  
163  
159  
155  
151  
146  
142  
139  
135  
131  
127  
123  
120  
116  
112  
108  
105  
102  
MAG.  
0.001  
0.001  
0.002  
0.003  
0.004  
0.004  
0.005  
0.005  
0.006  
0.006  
0.006  
0.006  
0.006  
0.006  
0.006  
0.006  
0.005  
0.005  
0.005  
0.005  
ANG.  
41.3  
88.9  
74.4  
81.6  
79.7  
72.6  
66.9  
70.9  
67.7  
63.9  
64.1  
63.9  
59.9  
60.0  
58.3  
60.3  
62.0  
61.2  
65.0  
68.8  
MAG.  
0.971  
0.971  
0.970  
0.969  
0.967  
0.965  
0.962  
0.959  
0.956  
0.953  
0.950  
0.946  
0.942  
0.939  
0.933  
0.930  
0.925  
0.921  
0.917  
0.913  
ANG.  
–1.9  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
850  
900  
950  
1000  
–6.7  
–4.5  
–10.2  
–13.5  
–16.9  
–20.8  
–23.7  
–27.0  
–30.7  
–33.7  
–36.9  
–40.2  
–43.3  
–46.5  
–49.4  
–52.3  
–55.9  
–59.0  
–61.5  
–64.3  
–7.1  
–9.8  
–12.1  
–14.8  
–17.3  
–19.7  
–22.1  
–24.8  
–27.2  
–29.5  
–32.1  
–34.6  
–36.7  
–39.1  
–41.5  
–43.8  
–46.1  
–48.4  
7
Unit: mm  
2.95 ± 0.2  
1.9 ± 0.2  
0.95 0.95  
+ 0.1  
– 0.06  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.16  
0.4  
0.4  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.4  
0.6  
0.85  
0.95  
1.8 ± 0.2  
Hitachi Code  
JEDEC  
MPAK-4  
—
EIAJ  
Conforms  
Weight (reference value) 0.013 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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