2SK522FRR [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPAK-3;型号: | 2SK522FRR |
厂家: | HITACHI SEMICONDUCTOR |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SPAK-3 晶体 小信号场效应晶体管 射频小信号场效应晶体管 放大器 |
文件: | 总8页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK522
Silicon N-Channel Junction FET
Application
VHF amplifier, Mixer, local oscillator
Outline
SPAK
1. Gate
2. Source
3. Drain
1
2
3
2SK522
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VGDO
IG
Ratings
–30
Unit
V
Gate to drain voltage
Gate current
10
mA
mA
mW
°C
Drain current
ID
20
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
200
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–30
—
—
V
IG = –100 µA, IS = 0
Gate cutoff current
IGSS
—
4
—
–10
20
–3
—
nA
mA
V
VGS = –0.5 V, VDS = 0
VDS = 5 V, VGS = 0
1
Drain current
IDSS
*
—
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
—
8
—
VDS = 5 V, ID = 10 µA
10
6.8
0.1
27
mS
pF
pF
dB
VDS = 5 V, VGS = 0, f = 1 kHz
yfs
Ciss
—
—
20
—
VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss
—
Power gain
PG
—
VDS = 5 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
1.7
2.5
dB
Note: 1. The 2SK522 is grouped by IDSS as follows.
Drain
D
E
F
IDSS
4 to 8
6 to 10
10 to 20
2
2SK522
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics (1)
10
8
300
200
100
VGS = 0
–0.2 V
6
–0.4
4
–0.6
–0.8
–1.0
2
0
10
20
30
40
50
0
50
100
150
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
Typical Output Characteristics (2)
VGS = 0
15
10
5
10
8
VDS = 5 V
–0.2 V
6
F
–0.4
–0.6
E
4
–0.8
–1.0
2
D
0
–3.0
0
1
2
3
4
5
–2.0
–1.0
0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
3
2SK522
Forward Transfer Admittance vs.
Drain to Source Voltage
Forward Transfer Admittance vs.
Drain Current
15
10
5
50
Ta = –25°C
25°C
20
10
5
75°C
2
1.0
0.5
VDS = 5 V
f = 1 kHz
VGS = 0
f = 1 kHz
0
5
10
15
0.2
0.5 1.0
2
5
10 20
Drain to Source Voltage VDS (V)
Drain Current ID (mA)
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Drain to Source Voltage
5
20
10
5
VGS = 0
f = 1 MHz
2
1.0
0.5
VGS = 0
f = 1 MHz
0.2
0.1
0.05
2
0.1 0.2
0.5 1.0
2
5
10
0.1 0.2
0.5 1.0
2
5
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
4
2SK522
Power Gain vs.
Drain to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
30
20
10
200
100
50
VGS = 0
f = 1 MHz
VGS = 0
f = 100 MHz
20
10
5
2
0.1 0.2
0.5 1.0
2
5
10
0
5
10
15
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Noise Figure vs.
Drain to Source Voltage
8
6
4
2
VGS = 0
f = 100 MHz
0
4
8
12
16
Drain to Source Voltage VDS (V)
5
2SK522
Power Gain and Noise Figure
Test Circuit
Shield
5.4
C1
3.0
4,700
D.U.T.
L2
50
L1 C2
V.V
SG Output
Impedance
50
1,000
S.G.
Unit R : Ω
C : pF
VDD
C1, C2 : 0 to 30pF Max Variable Air
L1 : 3.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T φ1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
6
Unit: mm
2.2 Max
4.2 Max
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
SPAK
—
EIAJ
—
Weight (reference value) 0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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