2SK2940S [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK2940S |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-563B (Z)
3rd. Edition
Jun 1998
Features
•
Low on-resistance
RDS =0.010 Ω typ.
•
•
High speed switching
4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
1
2
G
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK2940(L),2SK2940(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
ID
±20
V
45
A
Note1
Drain peak current
ID(pulse)
180
A
Body-drain diode reverse drain current IDR
45
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
45
A
EAR
173
mJ
W
°C
°C
Pch Note2
75
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2940(L),2SK2940(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10VNote4
ID = 20A, VGS = 4VNote4
ID = 20A, VDS = 10VNote4
VDS = 10V
Drain to source breakdown voltage V(BR)DSS 60
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.5
—
—
24
—
—
—
—
—
—
—
—
—
—
±10
10
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
2.5
0.010 0.013
0.015 0.025
Ω
Ω
Forward transfer admittance
Input capacitance
40
—
—
—
—
—
—
—
—
—
—
S
Ciss
Coss
Crss
td(on)
tr
2200
1050
320
25
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
VGS = 0
f = 1MHz
ID = 20A, VGS = 10V
RL = 1.5Ω
Rise time
200
320
240
0.95
60
Turn-off delay time
td(off)
tf
Fall time
Body–drain diode forward voltage VDF
IF = 45A, VGS = 0
Body–drain diode reverse
recovery time
trr
ns
IF = 45A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
3
2SK2940(L),2SK2940(S)
Main Characteristics
Power vs. Temperature Derating
100
Maximum Safe Operation Area
1000
300
100
75
50
25
30
10
Operation in
this area is
3
1
limited by R
DS(on)
0.3
0.1
Ta = 25 °C
0
3
Drain to Source Voltage
30
(V)
50
100
150
200
0.1 0.3
1
10
100
V
DS
Case Temperature Tc (°C)
Typical Output Characteristics
6 V
Typical Transfer Characteristics
10 V
50
40
30
20
10
50
40
30
20
10
5 V
V
= 10 V
DS
Pulse Test
Pulse Test
4 V
3.5 V
25°C
–25°C
4
Tc = 75°C
3 V
V
= 2.5 V
8
GS
0
0
1
2
3
5
2
4
6
10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
4
2SK2940(L),2SK2940(S)
Static Drain to Source on State Resistance
vs. Drain Current
100
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.4
0.3
0.2
0.1
Pulse Test
Pulse Test
50
20
10
5
V
GS
= 4 V
10 V
I
= 20 A
D
10 A
5 A
2
1
12
Gate to Source Voltage
0
4
8
16
20
1
2
5
10
20
50 100
V
(V)
Drain Current
I
(A)
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
500
40
Pulse Test
V
= 10 V
DS
Pulse Test
200
100
50
32
24
16
8
10 A 5 A
= 20 A
Tc = –25 °C
I
D
20
10
5
V
= 4 V
GS
25 °C
5, 10, 20 A
120
75 °C
2
1
10 V
0
–40
0.5
0
40
80
160
0.1 0.3
1
3
10
D
30
(A)
100
Case Temperature Tc (°C)
Drain Current
I
5
2SK2940(L),2SK2940(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
100
50
Ciss
2000
1000
500
Coss
20
10
200
Crss
di / dt = 50 A / µs
V
= 0
100
50
GS
V
= 0, Ta = 25 °C
GS
f = 1 MHz
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 45 A
Switching Characteristics
100
80
60
40
20
20
1000
500
I
D
t
d(off)
16
12
8
V
GS
V
= 10 V
25 V
t
f
DD
200
100
50
V
DS
50 V
t
r
t
d(on)
4
0
V
= 50 V
25 V
DD
20
10
V
= 10 V, V
= 30 V
GS
DD
PW = 10 µs, duty < 1 %
10 20 50 100
(A)
10 V
0
40
80
120
160
200
0.1 0.2 0.5
1
2
5
Gate Charge Qg (nc)
Drain Current
I
D
6
2SK2940(L),2SK2940(S)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
200
160
120
80
I
= 45 A
AP
V
= 25 V
DD
duty < 0.1 %
W
Rg > 50
10 V
V
= 0, –5 V
GS
5 V
40
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50W
V
DD
0
7
2SK2940(L),2SK2940(S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
q
q
g
q
ch – c(t) = s (t) • ch – c
ch – c = 1.67 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50W
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK2940(L),2SK2940(S)
Package Dimensions
Unit: mm
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.2
10.2 ± 0.3
2.59 ± 0.2
1.27 ± 0.2
0.76 ± 0.1
1.2 ± 0.2
+0.2
0.86
–0.1
+0.2
–0.1
0.1
2.59 ± 0.2
1.27 ± 0.2
0.4 ± 0.1
+0.2
–0.1
1.2 ± 0.2
0.4 ± 0.1
0.86
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
2.54 ± 0.5
L type
S type
LDPAK
—
Hitachi Code
EIAJ
—
JEDEC
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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