2SK2117 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK2117 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2116, 2SK2117
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for Switching regulator
Outline
TO-220CFM
1
D
2
3
1. Gate
G
2. Drain
3. Source
S
2SK2116, 2SK2117
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
Drain to source voltage
2SK2116
2SK2117
450
V
VDSS
500
Gate to source voltage
Drain current
VGSS
±30
V
ID
7
A
1
Drain peak current
ID(pulse)
*
28
A
Body to drain diode reverse drain current
Channel dissipation
IDR
7
A
Pch*2
Tch
35
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK2116, 2SK2117
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source 2SK2116
V(BR)DSS
450
500
—
—
V
ID = 10 mA, VGS = 0
breakdown
voltage
2SK2117
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±10
µA
µA
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
Zero gate
2SK2116
2SK2117
250
voltage drain
current
Gate to source cutoff voltage
Static drain to 2SK2116
VGS(off)
RDS(on)
2.0
—
—
3.0
0.8
0.9
V
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*1
0.6
0.7
Ω
source on state 2SK2117
resistance
—
Forward transfer admittance
|yfs|
4.0
6.5
—
S
ID = 4 A
V
DS = 10 V*1
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
—
1050
280
40
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = 4 A
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
15
55
VGS = 10 V
RL = 7.5 Ω
Turn-off delay time
Fall time
95
40
Body to drain diode forward
voltage
VDF
0.95
IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
320
—
ns
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
See characteristic curve of 2SK1157, 2SK1158.
3
2SK2116, 2SK2117
Power vs. Temperature Derating
60
40
20
Maximum Safe Operation Area
50
20
10
5
2
1
0.5
Operation in this Area
is Limited by RDS (on)
0.2
0.1
2SK2117
2SK2116
Ta = 25°C
0.05
0
50
100
150
1
3
10
30
100 300 1,000
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
0.5
1.0
0.3
0.1
0.2
0.1
θch–c (t) = γS (t) · θch–c
θch–c = 3.57°C/W, TC = 25°C
0.05
PDM
0.02
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
4
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
10.0 ± 0.3
φ 3.2 ± 0.2
1.0 ± 0.2
1.15 ± 0.2
2.5 ± 0.2
0.6 ± 0.1
2.54
2.54
0.7 ± 0.1
Hitachi Code
JEDEC
EIAJ
TO-220CFM
—
—
Weight (reference value) 1.9 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
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Tel: <852> (2) 735 9218
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Tel: 535-2100
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Tel: <44> (1628) 585000
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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