2SK1971 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1971 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总10页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1971
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PL
D
G
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
S
2SK1971
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
500
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±30
V
ID
35
A
1
Drain peak current
ID(pulse)
*
140
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
35
A
Pch*2
Tch
200
W
°C
°C
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SK1971
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
500
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
2.0
—
—
±10
250
3.0
µA
µA
V
VGS = ±25 V, VDS = 0
VDS =400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 18 A
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage
VGS(off)
—
Static drain to source on state RDS(on)
resistance
0.19
0.23
Ω
V
GS = 10 V*1
ID = 18 A
DS = 10 V*1
Forward transfer admittance
|yfs|
16
24
—
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
—
4320
1120
130
50
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V
VGS = 0
Coss
Reverse transfer capacitance Crss
f = 1 MHz
ID = 18A
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
170
320
130
1.1
VGS = 10 V
RL = 1.67Ω
Turn-off delay time
Fall time
Body to drain diode forward
voltage
VDF
IF =35 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
530
—
ns
IF = 35 A, VGS = 0,
diF / dt = 100 A / µs
Note 1. Pulse Test
3
2SK1971
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
300
200
100
Operation in this area is
limited by RDS (on)
300
100
30
10
3
1
0.3
0.1
Ta = 25°C
1
3
10
30 100 300 1000
0
50
100
150
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Transfer Characteristics
Typical Output Characteristics
50
40
30
20
10
50
40
30
20
10
6 V
5.5 V
10 V
VDS = 20 V
Pulse Test
Pulse Test
5 V
Tc = 25°C
75°C
–25°C
4.5 V
VGS = 4 V
0
2
4
6
8
10
0
10
20
30
40
50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
4
2SK1971
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
20
16
12
8
5
Pulse Test
50 A
2
1
Pulse Test
0.5
VGS = 10 V
0.2
0.1
20 A
4
ID = 10 A
0.05
0
4
8
12
16
20
2
5
10
20
50 100 200
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
1.0
–25°C
Pulse Test
VGS = 10 V
Tc = 25°C
20
10
5
0.8
0.6
0.4
0.2
0
75°C
ID = 50 A
20 A
2
1
VDS= 20 V
Pulse Test
10 A
0.5
1
2
5
10 20
50 100
–40
0
40
80
120
160
Drain Current I D (A)
Case Temperature Tc (°C)
5
2SK1971
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
10000
1000
1000
500
Ciss
200
100
50
Coss
100
10
di/dt = 100 A/ µs, VGS = 0
Ta = 25°C
Crss
20
VGS = 0
f = 1 MHz
10
0.5
1
2
5
10 20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
VGS
1000
500
1000
800
600
400
200
20
t (off)
d
VDD = 400 V
250 V
16
12
8
100 V
200
100
50
t
r
t
f
VDS
ID = 35 A
t (on)
d
4
VDD = 400 V
250 V
VGS = 10 V, V = 30 V
DD
:
20
10
<
µ
Pw = 5 s, duty 1%
=
100 V
0
0.5
1
2
5
10 20
50
0
40
80
120
160
200
Drain Current ID (A)
Gate Charge Qg (nc)
6
2SK1971
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20
10
VGS = 0, –5 V
VGS = 10 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
0.2
0.1
θch–c (t) = γS (t) · θch–c
θch–c = 0.625°C/W, TC = 25°C
PDM
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
7
2SK1971
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor
D.U.T
Vin
10%
10%
RL
10%
Vout
50 Ω
VDD
Vin
10 V
.
90%
tr
90%
td (off)
=
30 V
.
td (on)
tf
8
Unit: mm
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
1.4
3.0
2.2
1.2
+0.25
–0.1
+0.25
–0.1
0.6
2.8 ± 0.2
5.45 ± 0.5
1.0
5.45 ± 0.5
3.8
7.4
Hitachi Code
JEDEC
TO-3PL
—
EIAJ
—
Weight (reference value) 9.9 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
2SK1973TR
Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ROHM
2SK1975F31
Power Field-Effect Transistor, 10A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
ROHM
©2020 ICPDF网 联系我们和版权申明