2SK168FRF [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92(2), 3 PIN;
| 型号： | 2SK168FRF |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, TO-92(2), 3 PIN 晶体 小信号场效应晶体管 射频小信号场效应晶体管 放大器 |
| 文件： | 总9页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK168
Silicon N-Channel Junction FET
Application
VHF Amplifier, Mixer, Local oscillator
Outline
TO-92 (2)
1. Gate
2. Source
3. Drain
3
2
1
2SK168
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VGDO
VGSS
IG
Ratings
Unit
V
Gate to drain voltage
Gate to source voltage
Gate current
–30
–1
V
10
mA
mA
mW
°C
Drain current
ID
20
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
200
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V(BR)GDO
–30
—
—
V
IG = –100 µA, IS = 0
Gate cutoff current
IGSS
—
4
—
–10
20
nA
mA
V
VGS = –0.5 V, VDS = 0
1
Drain current
IDSS
*
—
VDS = 5 V, VGS = 0
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
|yfs|
—
8
—
–3.0
—
VDS = 5 V, ID = 10 µA
10
6.8
0.1
27
mS
pF
pF
dB
VDS = 5 V, VGS = 0, f = 1 kHz
VDS = 5 V, VGS = 0, f = 1 MHz
VDS = 5 V, VGS = 0, f = 1 MHz
Ciss
—
—
—
—
Reverse transfer capacitance Crss
—
Power gain
PG
—
VDS = 5 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
1.7
—
dB
VDS = 5 V, VGS = 0,
f = 100 MHz
Note: 1. The 2SK168 is grouped by IDSS as follows.
D
E
F
4 to 8
6 to 12
10 to 20
2
2SK168
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics (1)
10
8
300
200
100
VGS = 0
–0.2 V
6
–0.4
–0.6
4
–0.8
–1.0
2
0
10
20
30
40
50
0
50
100
150
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
VGS = 0
Typical Transfer Characteristics
VDS = 5 V
10
15
8
6
4
2
10
5
–0.2 V
F
E
–0.4
–0.6
–0.8
–1.0
D
0
–3.0
0
1
2
3
4
5
–2.0
–1.0
0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
3
2SK168
Forward Transfer Admittance vs.
Drain to Source Voltage
Forward Transfer Admittance vs.
Drain Current
15
50
Ta = –25°C
25°C
20
10
5
75°C
10
5
VGS = 0
f = 1 kHz
VDS = 5 V
f = 1 kHz
2
1.0
0.5
0
5
10
15
0.2
0.5 1.0
2
5
10 20
Drain to Source Voltage VDS (V)
Drain Current ID (mA)
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Drain to Source Voltage
5
20
VGS = 0
VGS = 0
2
1.0
0.5
f = 1 MHz
f = 1 MHz
10
5
0.2
0.1
0.05
2
0.1 0.2
0.5 1.0
2
5
10
0.1 0.2
0.5 1.0
2
5
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
4
2SK168
Output Capacitance vs.
Drain to Source Voltage
Power Gain vs.
Drain to Source Voltage
200
100
50
30
20
10
VGS = 0
f = 1 MHz
VGS = 0
f = 100 MHz
20
10
5
2
0.1 0.2
0.5 1.0
2
5
10
0
5
10
15
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Noise Figure vs.
Power Gain vs. Drain Current
Drain to Source Voltage
30
20
10
0
8
6
4
2
E
F
VGS = 0
f = 100 MHz
D
VDS = 5 V
f = 100 MHz
GS Variable
V
2
4
6
8
10 12 14 16
0
4
8
12
16
Drain Current ID (mA)
Drain to Source Voltage VDS (V)
5
2SK168
Transfer Admittance vs.
Frequency
Input and Output Admittance
vs. Frequency
50
5
gis
VDS = 5 V
D = 10 mA
yis = gis+jbis
yos = gos+jbos
VDS = 5 V
I
2
1.0
0.5
20
10
5
bis×10
gfs
I
D = 10 mA
bos×10
–bfs
gos
–10 brs
10 grs
yfs = gfs+jbfs
yrs = grs+jbfs
2
1.0
0.5
0.2
0.1
0.05
50
100
200
500
50
100
200
500
Frequency f (MHz)
Frequency f (MHz)
Input and Output Admittance
vs. Drain Current
Transfer Admittance vs.
Drain Current
5
50
VDS = 5 V
f = 100 MHz
bos
gis
2
1.0
0.5
20
10
5
gfs
bis×10
–bfs
–100 brs
VDS = 5 V
f = 100 MHz
yis = gis+jbis
yos = gos+jbos
0.2
0.1
2
100 grs
1.0
gos is Negligible
Small at This Frequency
yfs = gfs+jbfs
yrs = grs+jbrs
0.05
0.5
0.5 1.0
2
5
10
20
50
0.5 1.0
2
5
10
20
50
Drain Current ID (mA)
Drain Current ID (mA)
6
2SK168
Power Gain and Noise Figure
Test Circuit
Shield
5.4
3.0
L2
D.U.T.
50
SG Output
Impedance
4,700
C1
L1 C2
V.V
50
1,000
S.G.
Unit R : Ω
C : pF
VDD
C1, C2 : 0 to 30 pF Variable Air
L
L
: 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
: 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
1
2
7
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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