2SK1151L [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1151L |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总9页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
2
3
1
2
3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK1151(L)(S), 2SK1152(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1151
2SK1152
VDSS
450
V
500
Gate to source voltage
Drain current
VGSS
±30
V
ID
1.5
A
1
Drain peak current
ID(pulse)
*
6
A
Body to drain diode reverse drain current
Channel dissipation
IDR
1.5
A
Pch*2
Tch
20
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1151(L)(S), 2SK1152(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1151 V(BR)DSS 450
—
—
V
ID = 10 mA, VGS = 0
2SK1152
500
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
—
—
±10
µA
µA
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *1
Zero gate voltage
drain current
2SK1151 IDSS
2SK1152
100
Gate to source cutoff voltage
Static Drain to source 2SK1151 RDS(on)
on stateresistance 2SK1152
VGS(off)
2.0
—
—
0.6
—
—
—
—
—
—
—
—
—
3.0
5.5
6.0
—
—
—
—
—
—
—
—
—
V
3.5
4.0
1.1
160
45
5
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
pF
pF
pF
ns
ns
ns
ns
V
5
ID = 1 A, VGS = 10 V,
10
20
10
1.0
RL = 30 Ω
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward
voltage
VDF
IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
220
—
ns
IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 1. Pulse test
3
2SK1151(L)(S), 2SK1152(L)(S)
Maximum Safe Operation Area
Power vs. Temperature Derating
30
10
3
20
10
1.0
0.3
0.1
2SK1151
0.03
0.01
Ta = 25°C
2SK1152
0
50
100
150
1
10
100
1,000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
2.0
2.0
1.6
1.2
0.8
0.4
15 V
5 V
VDS = 20 V
Pulse Test
6 V
Pulse Test
1.6
1.2
0.8
0.4
10 V
4.5 V
4 V
–25°C
75°C
VGS = 3.5 V
TC = 25°C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
4
2SK1151(L)(S), 2SK1152(L)(S)
Static Drain to Source on State
Resistance vs. Drain Current
100
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
16
12
8
Pulse Test
50
Pulse Test
VGS = 10 V
20
10
2 A
15 V
5
1 A
4
ID = 0.5 A
2
1
0
4
8
12
16
20
0.05 0.1 0.2
0.5 1.0
2
5
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
10
8
5
2
ID = 2 A
VDS = 20 V
Pulse Test
V
GS = 10 V
Pulse Test
–25°C
1.0
6
TC = 25°C
1 A
0.5 A
0.5
75°C
4
0.2
0.1
2
0
–40
0
40
80
120
160
0.1 0.2
0.5 1.0
2
5
0.05
Drain Current ID (A)
Case Temperature TC (°C)
5
2SK1151(L)(S), 2SK1152(L)(S)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1,000
1,000
100
VGS = 0
f = 1 MHz
di/dt = 100A/µs, Ta = 25°C
500
V
GS = 0
Ciss
Pulse Test
200
100
50
Coss
10
1
20
10
Crss
0.05 0.1 0.2
0.5 1.0
2
5
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
100
50
500
400
300
20
16
12
8
•
VGS = 10 V VDD = 30 V
100 V
250 V
•
PW = 2 µs, duty < 1%
VDS
400 V
td (off)
20
10
tf
VGS
200
100
td (on)
tr
5
ID = 1.5 A
VDD = 400 V
250 V
100 V
4
2
1
0
10
0.05 0.1 0.2
0.5 1.0
2
5
0
2
4
6
8
Drain Current ID (A)
Gate Charge Qg (nc)
6
2SK1151(L)(S), 2SK1152(L)(S)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
1.6
1.2
0.8
0.4
Pulse Test
5 V,10 V
0.4
VGS=0, –10V
0.8 1.2
0
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θch–c(t) = γS (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
PDM
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Wavewforms
90 %
Vout Monitor
RL
D.U.T
Vin
10 %
10 %
10 %
Vout
50 Ω
.
90 %
d (off)
90 %
t
Vin = 10 V
VDD = 30 V
.
t
t
t
d (on)
r
f
7
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (L)-(1)
—
EIAJ
Conforms
Weight (reference value) 0.42 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(America) Inc.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
2SK1152(S)
Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
HITACHI
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