2SK1093 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1093 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总3页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1093
Silicon N-Channel MOS FET
Application
TO–220FM
High speed power switching
Features
• Low on-resistance
• High speed switching
2
1
2
3
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
1
1. Gate
2. Drain
3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
60
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
±20
V
GSS
———————————————————————————————————————————
Drain current
I
10
A
D
———————————————————————————————————————————
Drain peak current
I
*
40
A
D(pulse)
———————————————————————————————————————————
Body to drain diode reverse drain current
I
10
A
DR
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at T = 25 °C
*
C
2SK1093
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V
60
—
—
V
I
= 10 mA, V
= 0
(BR)DSS
D
GS
voltage
———————————————————————————————————————————
Gate to source breakdown
V
±20
—
—
V
I
= ±100 µA, V
= 0
(BR)GSS
G
DS
voltage
———————————————————————————————————————————
Gate to source leak current
I
—
—
±10
µA
V
= ±16 V, V
= 0
GSS
GS
DS
———————————————————————————————————————————
Zero gate voltage drain current
I
—
—
250
µA
V
= 50 V, V
= 0
DSS
DS
GS
———————————————————————————————————————————
Gate to source cutoff voltage
V
1.0
—
2.0
V
I
= 1 mA, V
= 10 V
GS(off)
D
DS
———————————————————————————————————————————
Static drain to source on state
R
—
0.12
0.15
Ω
I
= 5 A, V
= 10 V *
DS(on)
D
GS
resistance
———————
——————————–
0.17
0.22
I
= 5 A, V
= 4 V *
D
GS
———————————————————————————————————————————
Forward transfer admittance
|y |
3.5
6.0
—
S
I
= 5 A, V
= 10 V *
fs
D
DS
———————————————————————————————————————————
Input capacitance
Ciss
—
400
—
pF
V
= 10 V, V
= 0,
DS
GS
————————————————————————————————
Output capacitance
Coss
—
220
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
60
—
pF
———————————————————————————————————————————
Turn-on delay time
t
—
5
—
ns
I
= 5 A, V
= 10 V,
d(on)
D
GS
————————————————————————————————
Rise time
t
—
55
—
ns
R = 6 Ω
L
r
————————————————————————————————
Turn-off delay time
t
—
140
—
ns
d(off)
————————————————————————————————
Fall time
t
—
90
—
ns
f
———————————————————————————————————————————
Body to drain diode forward
V
—
1.2
—
V
I = 10 A, V
= 0
DF
F
GS
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
—
125
—
ns
I = 10 A, V
= 0,
rr
F
GS
recovery time
di /dt = 50 A/µs
F
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK970.
2SK1093
Maximum Safe Operation Area
Power vs. Temperature Derating
100
30
20
30
10
3
10
Operation in this area
is limited by RDS (on)
1.0
0.3
0.1
Ta = 25°C
0
50
100
150
0.1 0.3
1.0
3
10
30
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θch–c (t) = γs (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
PDM
PW
D =
0.03
0.01
T
PW
T
10 µ
100µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
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