2SD1868-B [HITACHI]

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2SD1868-B
型号: 2SD1868-B
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
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2SD1868, 2SD1869  
Silicon NPN Epitaxial  
Application  
Low frequency high voltage amplifier  
Outline  
TO-92MOD  
1. Emitter  
2. Collector  
3. Base  
3
2
1
2SD1868, 2SD1869  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SA1868  
2SA1869  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
160  
200  
160  
200  
V
5
5
V
100  
100  
mA  
W
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
0.9  
0.9  
Tj  
150  
150  
°C  
°C  
Tstg  
–55 to +150  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to base  
2SD1868 V(BR)CBO  
160  
V
IC = 10 µA, IE = 0  
breakdown voltage  
2SD1869  
200  
160  
Collector to emitter 2SD1868 V(BR)CEO  
breakdown voltage  
V
IC = 1 mA, RBE = ∞  
2SD1869  
200  
5
Emitter to base breakdown  
voltage  
V(BR)EBO  
V
IE = 10 µA, IC = 0  
Collector cutoff  
current  
2SD1868 ICBO  
10  
µA  
VCB = 140 V, IE = 0  
2SD1869  
VCB = 160 V, IE = 0  
1
DC current transfer ratio  
Base to emitter voltage  
hFE1  
hFE2  
VBE  
*
60  
30  
320  
VCE = 5 V, IC = 10 mA  
VCE = 5 V, IC = 1 mA  
VCE = 5 V, IC = 10 mA  
IC = 30 mA, IB = 3 mA  
1.5  
2
V
V
Collector to emitter saturation VCE(sat)  
voltage  
Gain bandwidth product  
fT  
140  
3.8  
MHz  
pF  
VCE = 5 V, IC = 10 mA  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
Note: 1. The 2SD1868 and 2SD1869 are grouped by hFE1 as follows.  
Grade  
B
C
D
hFE1  
60 to 120  
100 to 200  
160 to 320  
2
2SD1868, 2SD1869  
Typical Output Characteristics  
Maximum Collector Dissipation Curve  
20  
16  
12  
8
1.2  
0.8  
0.4  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
4
10 µA  
IB = 0  
2
4
6
8
10  
0
50  
100  
150  
0
Collector to Emitter Voltage VCE (V)  
Ambient Temperature Ta (°C)  
DC Current Transfer Ratio vs.  
Collector Current  
Typical Transfer Characteristics  
500  
100  
50  
V
CE = 5 V  
VCE = 5 V  
Pulse Test  
Pulse Test  
200  
100  
50  
Ta = 75°C  
–25  
20  
10  
5
25  
20  
10  
5
2
1
0
0.2  
0.4  
0.6  
0.8  
1.0  
1
2
5
10  
20  
50 100  
Base to Emitter Voltage VBE (V)  
Collector Current IC (mA)  
3
2SD1868, 2SD1869  
Gain Bandwidth Product vs.  
Collector Current  
Saturation Voltage vs. Collector Current  
500  
5
VCE = 5 V  
Pulse Test  
IC = 10 IB  
Pulse Test  
200  
100  
50  
2
1.0  
VBE(sat)  
0.5  
75  
25  
20  
10  
5
0.2  
0.1  
VCE(sat)  
0.05  
1
2
5
10  
20  
50 100  
0.5 1.0  
2
5
10 20  
50  
Collector Current IC (mA)  
Collector Current IC (mA)  
Collector Output Capacitance vs.  
Collector to Base Voltage  
50  
f = 1 MHz  
IE = 0  
20  
10  
5
2
1.0  
0.5  
1
2
5
10  
20  
50  
100  
Collector to Base Voltage VCB (V)  
4
Unit: mm  
4.8 ± 0.3  
3.8 ± 0.3  
0.65 ± 0.1  
0.75 Max  
0.60 Max  
0.5 ± 0.1  
0.5  
1.27  
2.54  
Hitachi Code  
JEDEC  
TO-92 Mod  
EIAJ  
Conforms  
Weight (reference value) 0.35 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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