2SD1504FTZ [HITACHI]
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3;
| 型号： | 2SD1504FTZ |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3 晶体 晶体管 放大器 |
| 文件： | 总7页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1504
Silicon NPN Epitaxial
Application
Low frequency amplifier, Muting
Outline
SPAK
1. Emitter
2. Collector
3. Base
1
2
3
2SD1504
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
15
V
5
V
0.5
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
ic (peak)
PC
1.0
A
300
mW
°C
°C
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
15
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
ICBO
hFE*1
VBE
—
—
10
µA
VCB = 20 V, IE = 0
250
—
—
1200
—
VCE = 1 V, IC = 150 mA*2
VCE = 1 V, IC = 150 mA
IC = 500 mA, IB = 50 mA*2
0.65
0.15
V
V
Collector to emitter saturation VCE(sat)
voltage
—
0.5
VCE(sat)
—
—
—
0.018
300
—
—
—
V
IC = 30 mA, IB = 3 mA
VCE = 1 V, IC = 50 mA
IB = 2 mA
Gain bandwidth product
On resistance
fT
MHz
Ω
ron
0.5
Notes: 1. The 2SD1504 is grouped by hFE as follows.
2. Pulse test
D
E
F
250 to 500
400 to 800
600 to 1200
2
2SD1504
Typical Output Characteristics
Maximum Collector Dissipation Curve
10
8
300
200
100
6
4
2
IB = 2.5 µA
2
4
6
8
10
0
50
100
150
0
Collecter to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
VCE = 1 V
Typical Output Characteristics
10
100
80
60
40
20
8
6
4
2
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
0
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
3
2SD1504
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
VBE(sut)
1,000
1,000
IC/IB = 10
Pulse
300
100
300
100
VCE(sat)
VCE = 1 V
Pulse
30
10
3
30
10
3
1
1
1
1
3
10
30
100 300 1,000
3
10
30
100 300 1000
Collector Current IC (mA)
Collector current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
500
100
VCE = 1 V
f = 1 MHz
IE = 0
30
10
200
100
50
3
20
10
2
1
1
5
10
20
50 100 200
3
10
30
100
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
4
2SD1504
On Resistance vs. Base Current
10
IN 3 kΩ
OUT
3 kΩ
IB
3
f = 10 kHz
1.0
0.3
0.1
0.1
0.3
1.0
3
10
Base Current IB (mA)
5
Unit: mm
2.2 Max
4.2 Max
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
SPAK
—
EIAJ
—
Weight (reference value) 0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
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Tel: 535-2100
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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