2SD1418DAUL [HITACHI]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3;
| 型号： | 2SD1418DAUL |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 晶体 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1418
Silicon NPN Epitaxial
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1025
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1418
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
120
VCEO
80
V
VEBO
5
V
IC
1
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
2
A
1
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
80
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICBO
—
60
30
—
—
—
—
—
10
320
—
1
µA
VCB = 100 V, IE = 0
1
hFE1
hFE2
*
VEB = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
Collector to emitter saturation VCE(sat)
voltage
V
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
VBE
fT
—
—
—
—
1.5
—
V
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 150 mA*2
VCB = 10 V, IE = 0, f = 1 MHz
140
12
MHz
pF
Cob
—
Notes: 1. The 2SD1418 is grouped by hFE1 as follows.
2. Pulse test
Mark
DA
DB
DC
hFE1
60 to 120
100 to 200
160 to 320
2
2SD1418
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
0.8
0.6
0.4
0.2
35
30
1.2
0.8
0.4
25
20
15
10
5
2
1
0.5 mA
IB = 0
2
4
6
8
10
0
50
100
150
0
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
VCE = 5 V
DC Current Transfer Ratio vs. Collector Current
300
500
VCE = 5 V
200
100
50
250
200
150
100
50
20
10
5
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100
300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
3
2SD1418
Saturation Voltage vs. Collector Current
0.6
1.2
IC = 10 IB
Pulse
0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
VCE(sat)
0
0
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs. Collector Current
240
200
100
50
VCE = 5 V
Pulse
f = 1 MHz
IE = 0
200
160
120
80
20
10
5
40
2
0
10
1
2
5
10 20
50 100
30
100
300
1,000
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
4
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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For further information write to:
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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