2SC5449 [HITACHI]
Silicon NPN Triple Diffused Character Display Horizntal Deflection Output; 硅NPN三重扩散字符显示Horizntal偏转输出
| 型号： | 2SC5449 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Triple Diffused Character Display Horizntal Deflection Output |
| 文件： | 总7页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5449
Silicon NPN Triple Diffused
Character Display Horizntal Deflection Output
ADE-208-578 B (Z)
3rd. Edition
September 1997
Features
•
•
•
High breakdown voltage
CBO = 1500 V
V
High speed switching
tf = 0.15 µsec (typ.) at fH = 64 kHz
Isolated package
TO–3PFM
Outline
TO–3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5449
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
1500
700
V
6
V
IC
12
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at Tc = 25°C
ic(peak)
24
A
Note1
PC
50
W
°C
°C
Tj
150
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CEO
Min
Typ
Max
Unit
Test Conditions
Collector to emitter
breakdown voltage
700
—
—
V
IC = 10mA, RBE = ∞
Emitter to base
V(BR)EBO
6
—
—
V
IE = 10mA, IC = 0
breakdownvoltage
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
ICES
—
—
—
—
—
500
30
6.5
5
µA
VCE = 1500V, RBE = 0
VCE = 5 V, IC = 1A
VCE = 5 V, IC = 7A
IC = 7A, IB = 1.8A
hFE1
10
3.5
—
hFE2
Collector to emitter
saturationvoltage
VCE(sat)
V
Base to emitter
saturationvoltage
VBE(sat)
—
—
—
—
1.5
0.4
—
V
IC = 7A, IB = 1.8A
Fall time
tf
tf
0.2
0.15
µs
µs
ICP = 6A, IB1 = 2A
fH = 31.5kHz
Fall time
ICP = 6A, IB1 = 1.5A
fH = 64kHz
2
2SC5449
Main Characteristics
Collector Power Dissipation
vs. Temperature
Area of Safe Operaion
50
20
80
60
40
20
10
5
2
1
0.5
L = 180 µH
= –1 A
I
B2
duty < 1 %
Tc = 25°C
0.2
0.1
0
50
100
150
200
100
Collector to Emitter Voltage V
5000
1000
10
Case Temperature Tc (°C)
(V)
CE
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
10
100
50
75 °C
20
5
10
5
25 °C
Tc = –25 °C
2
1
V
= 5 V
10
I
= 0
B
CE
Tc = 25 °C
0
5
10
2
5
0.1 0.2
0.5
1
20
Collector Current
I
(A)
Collector to Emitter Voltage V
(V)
CE
C
3
2SC5449
Base to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
10
5
10
5
I
/ I = 4
B
C
I
/ I = 4
B
C
2
75 °C
25 °C
2
Tc = –25°C
1
1
0.5
0.5
75 °C
25 °C
0.2
0.2
Tc = –25 °C
0.1
0.05
0.1
2
5
10
2
5
10
0.1 0.2
0.5
1
20
0.2
0.5
1
20
Collector Current
I
(A)
C
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
vs. Base Current
Fall Time vs. Base Current
= 6 A
f = 64 kHz
H
Tc = 25°C
0.8
0.6
0.4
10
I
CP
I
= 4 A
6 A
C
8 A
5
0
0.2
0
Tc = 25°C
0.4 0.8
1.2
1.6 2.0 2.4 2.6
(A)
0.1 0.2
0.5
1
2
B
5
10
Base Current
I
(A)
Base Current I
B1
4
2SC5449
Storage Time vs. Base Current
= 6 A
f = 64 kHz
H
Tc = 25°C
8
6
4
I
CP
2
0
0.4 0.8
1.2
1.6 2.0
2.4 2.6
(A)
Base Current I
B1
5
2SC5449
Package Dimensions
Unit: mm
f 3.2
16.0 Max
5.8 Max
4.0
3.2
1.6
1.4 Max
2.6
1.4 Max
+0.2
–0.1
0.9
+0.2
–0.1
0.66
5.45 ± 0.5
5.45 ± 0.5
TO–3PFM
Hitachi Code
EIAJ
—
—
JEDEC
6
2SC5449
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Tel: 415-589-8300
Fax: 535-1533
Fax: 415-583-4207
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Berkshire SL6 8YA
United Kingdom
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 0628-585000
Fax: 0628-778322
Tel: 27359218
Fax: 27306071
Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
7
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