2SC2776-C [HITACHI]
SMALL SIGNAL TRANSISTOR;
| 型号： | 2SC2776-C |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | SMALL SIGNAL TRANSISTOR 光电二极管 |
| 文件： | 总7页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2776
Silicon NPN Epitaxial Planar
ADE-208-1077 (Z)
1st. Edition
Mar. 2001
Application
•
•
VHF amplifier
Mixer, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
3. Collector
2
2SC2776
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
4
V
30
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
20
4
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICBO
hFE*1
—
35
—
—
0.5
200
1.2
µA
VCB = 10 V, IE = 0
—
VCE = 6 V, IC = 1 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation VCE(sat)
voltage
0.8
V
Collector output capacitance
Gain bandwidth product
Noise figure
Cob
fT
—
—
—
1.1
320
5.5
—
—
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 1 mA
MHz
dB
NF
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
Power gain
PG
—
17
—
dB
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 100 Ω,
RL = 550 Ω, Unneutralized
Note: 1. The 2SC2776 is grouped by hFE as follows.
Grade
Mark
hFE
A
B
C
VA
VB
VC
35 to 70
60 to 120
100 to 200
2
2SC2776
Typical Output Characteristics (1)
Maximum Collector Dissipation Curve
20
16
12
8
150
100
200
240
180
160
140
120
100
80
60
40
P
= 100 mW
C
50
0
4
20 µA
IB = 0
0
4
8
12
16
20
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
50
Typical Transfer Characteristics (1)
5
4
3
2
1
20
16
12
8
VCE = 6 V
4
IB = 0
0
0
4
8
12
16
20
0.60
0.64
0.68
0.72
0.76 0.80
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
3
2SC2776
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics (2)
140
5
4
3
2
1
VCE = 6 V
120
100
80
60
40
20
0
VCE = 6 V
0
0.1 0.2
0.5 1.0
2
5
10 20
0.60
0.64
0.68
0.72
0.76 0.80
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance vs.
Collector to Emitter Voltage
2.8
2.0
f = 1 MHz
I
E = 0
2.4
2.0
1.6
1.2
0.8
0.4
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
f = 1 MHz
I
E = –1 mA
0.1 0.2
0.5 1.0
2
5
10 20
0.1 0.2
0.5 1.0
2
5
10 20
Collector to Emitter Voltage VCE (V)
Collector to Base Voltage VCB (V)
4
2SC2776
Reverse Transfer Capacitance
vs. Emitter Current
Gain Bandwidth Product vs.
Collector Current
450
400
350
300
250
200
150
100
50
1.0
0.8
0.6
VCE = 6 V
0.4
0.2
0
VCE = 10 V
f = 1 MHz
0
0.1 0.2 0.5 1.0
2
5
10 20
–0.1 –0.2
–0.5 –1.0
–2
–5
Collector Current IC (mA)
Emitter Current IE (mA)
Noise Figure vs. Collector to
Emitter Voltage
Noise Figure vs. Collector Current
14
12
10
8
12
10
8
VCE = 6 V
f = 100 MHz
Rg = 50 Ω
IC = 1 mA
f = 100 MHz
Rg = 50 Ω
6
6
4
4
2
2
0
0
0.1 0.2
0.5 1.0
2
5
10
0.1 0.2
0.5 1.0
2
5
10 20
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
Power Gain Test Circuit
D.U.T.
IN
f = 100 MHz
Rg = 100 Ω
300 p
0.1 µ
OUT
RL = 550 Ω
10 p
max
3 k
500
0.01 µ
0.01 µ
VEE
0.01 µ
VCC
Unit R : Ω
C : F
5
2SC2776
Package Dimensions
As of January, 2001
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
0.4
0 – 0.1
0.95
0.95
1.9 ± 0.2
2.95 ± 0.2
Hitachi Code
JEDEC
MPAK
—
EIAJ
Conforms
0.011 g
Mass (reference value)
6
2SC2776
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
7
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