2SC1890 [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SC1890 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1890, 2SC1890A
Silicon NPN Epitaxial
Application
•
•
Low frequency high voltage amplifier
Complementary pair with 2SA893/A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1890, 2SC1890A
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
VCBO
VCEO
VEBO
IC
2SC1890
2SC1890A
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
90
120
90
120
V
5
5
V
50
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
300
300
Tj
150
150
Tstg
–55 to +150
–55 to +150
Electrical Characteristics (Ta = 25°C)
2SC1890
2SC1890A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
V(BR)CEO
90
—
—
120
—
—
V
IC = 1 mA, RBE = ∞
Collector cutoff current ICBO
—
—
—
—
—
—
0.5
—
—
—
—
—
—
—
—
—
µA
µA
VCB = 75 V, IE = 0
—
0.5
VCB = 100 V, IE = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
DC current tarnsfer ratio hFE*1
Base to emitter voltage VBE
250
—
1200 250
1200
0.75
0.5
0.75
0.5
—
—
V
V
Collector to emitter
saturation voltage
VCE(sat)
—
Gain bandwidth product fT
—
—
200
1.6
—
—
—
—
200
1.6
—
—
MHz VCE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
pF
VCB = 25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
2
10
—
2
10
dB
VCE = 6 V, IC = 50 µA,
Rg = 50 kΩ, f = 1 kHz
Note: 1. The 2SC1890/A is grouped by hFE as follows.
D
E
F
250 to 500
400 to 800 600 to 1200
See characteristic curves of 2SC1775 and 2SC1775A.
2
2SC1890, 2SC1890A
Maximum Collector Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.5 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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