2SB649A [HITACHI]
Silicon PNP Epitaxial; PNP硅外延
| 型号： | 2SB649A |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon PNP Epitaxial |
| 文件： | 总8页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
1
2
3
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings
2SB649
–180
–120
–5
Item
Symbol
VCBO
VCEO
VEBO
IC
2SB649A
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–180
–160
V
–5
V
–1.5
–1.5
A
Collector peak current
Collector power dissipation
IC(peak)
–3
–3
A
PC
1
1
W
W
°C
°C
PC*1
Tj
20
20
Junction temperature
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Note: 1. Value at TC = 25°C
2
2SB649, 2SB649A
Electrical Characteristics (Ta = 25°C)
2SB649
2SB649A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
–180
–120
–5
—
—
—
—
—
—
–180
–160
–5
—
—
—
—
—
—
V
IC = –1 mA, IE = 0
IC = –10 mA, RBE = ∞
IE = –1 mA, IC = 0
VCB = –160 V, IE = 0
Collector to emitter
breakdown voltage
V
Emitter to base
breakdown voltage
V
Collector cutoff current ICBO
DC current transfer ratio hFE1
—
—
—
–10
320
—
—
—
–10
200
µA
1
*
60
60
VCE = –5 V,
IC = –150 mA
hFE2
30
—
—
—
—
—
—
30
—
—
—
—
—
—
VCE = –5 V,
IC = –500 mA*2
Collector to emitter
saturation voltage
VCE(sat)
—
–1
–1.5
—
—
–1
–1.5
—
V
V
IC = –500 mA,
IB = –50 mA
Base to emitter voltage VBE
—
—
VCE = –5 V,
IC = –150 mA
Gain bandwidth product fT
140
27
140
27
MHz VCE = –5 V,
IC = –150 mA
Collector output
capacitance
Cob
—
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB649
60 to 120
60 to 120
100 to 200
100 to 200
160 to 320
—
2SB649A
3
2SB649, 2SB649A
Maximum Collector Dissipation
Curve
Area of Safe Operation
(–13.3 V, –1.5 A)
30
20
10
–3
ICmax
–1.0
(–40 V, –0.5 A)
–0.3
–0.1
DC Operation (TC = 25°C)
(–120 V, –0.038 A)
–0.03
–0.01
(–160 V, –0.02 A)
2SB649A
2SB649
0
50
100
150
–1
–3
–10
–30 –100 –300
Collector to emitter voltage VCE (V)
Case temperature TC (°C)
Typical Transfer Characteristics
–500
Typical Output Characteristics
TC = 25°C
–1.0
–0.8
–0.6
–0.4
–0.2
VCE = –5 V
–100
–10
–1
IB = 0
–30
0
–10
–20
–40
–50
0
–0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
Collector to emitter voltage VCE (V)
4
2SB649, 2SB649A
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
350
350
250
200
150
100
50
VCE = –5V
IC = 10 IB
–25
25
0
–1
–10
–100
–1,000
–1
–10
–100
–1,000
Collector current IC (mA)
Collector current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
240
200
160
120
80
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
VCE = –5 V
IC = 10 IB
40
0
–1
–10
–100
–1,000
–10
–30
–100
–300
–1,000
Collector current IC (mA)
Collector current IC (mA)
5
2SB649, 2SB649A
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
I
E = 0
20
10
5
2
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
6
Unit: mm
8.0 ± 0.5
2.7 ± 0.4
+0.15
φ
3.1–0.1
120°
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5 0.55
1.2
Hitachi Code
JEDEC
EIAJ
TO-126 Mod
—
—
Weight (reference value) 0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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