2SA1122CDUR
更新时间：2024-09-18 13:02:05
品牌：HITACHI
描述：Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
概述
数据手册2SA1122CDUR 概述
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3
2SA1122CDUR 数据手册
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PDF下载2SA1122
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3
1
1. Emitter
2. Base
3. Collector
2
2SA1122
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–55
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
–55
V
–5
V
–100
150
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–55
–55
–5
—
—
V
IC = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
IEBO
hFE*1
—
—
—
—
—
–0.5
–0.5
800
µA
µA
VCB = –30 V, IE = 0
—
VEB = –2 V, IC = 0
160
—
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
Collector to emitter saturation VCE(sat)
voltage
–0.5
V
V
Base to emitter voltage
VBE
—
—
–0.75
VCE = –12 V, IC = –2 mA
Note: 1. The 2SA1122 is grouped by hFE as follows.
Grade
Mark
hFE
B
C
D
CC
CD
CE
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
2
2SA1122
Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
3 – 0.4
0 – 0.1
0.95
0.95
1.9 ± 0.2
2.95 ± 0.2
Hitachi Code
JEDEC
MPAK
—
EIAJ
Conforms
Weight (reference value) 0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
2SA1122CDUR 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA1122CE | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| 2SA1122CE | RENESAS | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
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| 2SA1122CE01 | RENESAS | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3 | 获取价格 |
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| 2SA1122CETL | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3 | 获取价格 |
|
| 2SA1122CETL | RENESAS | 100mA, 55V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 | 获取价格 |
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| 2SA1122CETR | HITACHI | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3 | 获取价格 |
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| 2SA1122CETR | RENESAS | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, MPAK-3 | 获取价格 |
|
| 2SA1122CEUR | RENESAS | 100mA, 55V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 | 获取价格 |
|
| 2SA1122D | ETC | TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346 | 获取价格 |
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