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1S2075(K)RE

更新时间：2024-09-18 13:02:47

品牌：HITACHI

描述：Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35

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1S2075(K)RE 概述

Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35

1S2075(K)RE 数据手册

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1S2075(K)

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-144A (Z)

Rev. 1

Aug. 1995

Features

•

Low capacitance. (C = 3.5pF max)

Short reverse recovery time. (t_rr= 8.0ns max)

High reliability with glass seal.

Ordering Information

Type No.

Cathode band

Green

Mark

Package Code

DO-35

1S2075(K)

Outline

Cathode band

1. Cathode

2. Anode

1S2075(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

Peak reverse voltage

Reverse voltage

V_RM

V_R

I_FM

I_FSM

I_O

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Power dissipation

450

°C

600

100

250

Junction temperature

Storage temperature

175

Tstg

–65 to +175

°C

Note: Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

—

Max

Unit

Test Condition

I_F= 10mA

Forward voltage

Reverse current

Capacitance

V_F

I_R

—

0.8

0.1

3.5

8.0

—

µA

V_R= 30V

—

V_R= 1V, f = 1MHz

Reverse recovery time t_rr*

—

I_F= I_R= 10mA, Irr = 1mA

Note: Reverse recovery time test circuit

Supply

3kΩ

0.1µF

Sampling

Oscilloscope

Ro = 50Ω Pulse

Rin = 50Ω

Generator

Trigger

1S2075(K)

10^–1

10^–2

10^–3

10^–4

0.6

Forward voltage V_F(V)

0.2

0.4

0.8

1.0 1.2

Fig.1 Forward current Vs. Forward voltage

10^–4

Ta = 125°C

10^–5

Ta = 75°C

10^–6

10^–7

Ta = 25°C

10^–8

10^–9

Reverse voltage V_R(V)

Fig.2 Reverse current Vs. Reverse voltage

1S2075(K)

f = 1MHz

1.0

10^–1

10²

1.0

Reverse voltage V_R(V)

Fig.3 Capacitance Vs. Reverse voltage

1S2075(K)

Package Dimensions

Unit: mm

26.0 Min

4.2 Max

1 Cathode

2 Anode

Cathode band (Green)

HITACHI Code

JEDEC Code

EIAJ Code

DO-35

SC-48

0.13

Weight (g)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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