US3AF [HDSEMI]
MAF Plastic-Encapsulate Diodes;
| 型号： | US3AF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | MAF Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US3AF THRU US3MF
HD AF80
SMAF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●I
3A
50V-1000V
●High surge current capability
o
SMAF
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● US3AF-US3MF : US3A-US3M
US3
GF
Item
Symbol Unit
Test Conditions
KF MF
AF BF DF
JF
FF
VRRM
V
50
100 200 300
400 600 800 1000
Repetitive Peak Reverse Voltage
35
70 140 210 280 420 560 700
Maximum RMS Voltage
V
V
RMS
IF(AV)
A
A
3
Average Forward Current
60HZ Half-sine wave, Resistance
load, TL =110℃
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
100
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
=25℃
a
）
Electrical Characteristics (T
Unless otherwise specified
US3
Item
Symbol
Unit
Test Conditions
GF
KF MF
AF BF DF
JF
FF
VF
IF =3.0A
V
1.0
1.3
1.7
Peak Forward Voltage
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
50
75
IRRM1
IRRM2
T =25℃
10
a
μA
VRM=VRRM
Peak Reverse Current
T =100℃
a
200
471)
131)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
FIG.1: FORWARD CURRENT DERATING CURVE
3.5
3.0
2.5
2.0
1.5
1.0
0.5
200
100
0
8.3ms Single Half Sine Wave
JEDEC Method
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
50
70
90
110
130
150
TL(℃)
1
10
100
FIG.3: TYPICAL FORWARD CHARACTERISTICS
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
10
1000
TJ=25
Pulse width=300us
1% Duty Cycle
℃
US3A-D
100
10
Tj=100℃
1.0
0.1
0.01
Tj=25℃
US3G
US3J-M
1.0
0.1
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Voltage(%)
VF(V)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMAF
.193(4.90)
.173(4.40)
.047(1.20)
.035(0.90)
.146(3.70)
.130(3.30)
.063(1.60)
.051(1.30)
.106(2.70)
.094(2.40)
.009(0.23)
.007(0.18)
.051(1.30)
.039(1.00)
Dimensions in inches and (millimeters)
SMAF
4.65
0.55
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMAF
4
H
igh Diode Semiconductor
相关型号：
US3B
Surface Mounted High-efficiency Rectifier Reverse Voltage 50 --- 1000 V Forward Current 3.0 A
DACHANG
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