US1A-SMB [HDSEMI]
SMB Plastic-Encapsulate Diodes;型号: | US1A-SMB |
厂家: | Jiangsu High diode Semiconductor Co., Ltd |
描述: | SMB Plastic-Encapsulate Diodes |
文件: | 总4页 (文件大小:1206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
US1A THRU US1M
HD BK46
SMB Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●I
1A
o
SMB
●VRRM
50V-1000V
●High surge current capability
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● US1X
:
X From A To M
US
1A 1B 1D 1F 1G 1J 1K 1M
Item
Symbol Unit
Conditions
50
100 200 300 400 600 800 1000
VRRM
V
Repetitive Peak Reverse Voltage
V
MaximumRMS Voltage
V
RMS
35
70 140 210 280 420 560 700
60Hz Half-sine wave, Resistance
IF(AV)
A
A
Average Forward Current
1.0
30
load, Ta=115℃
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
TJ
℃
℃
Junction Temperature
Storage Temperature
-55 ~ +150
-55 ~ +150
TSTG
Electrical Characteristics (T =25℃ Unless otherwise specified)
a
US
Item
Symbol
Unit
V
Test Condition
1A 1B 1D 1F 1G 1J 1K 1M
1A 1B 1D 1F 1G 1J 1K 1M
VFM
IFM=1.0A
1.0
1.3
1.7
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
IRRM1
IRRM2
T =25℃
5
a
μA
VRM=VRRM
T =125℃
a
50
IF=0.5A IR=1A
IRR=0.25A
trr
ns
50
75
751)
271)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
er
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)
copper pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25℃
Pulse width=300us
1% Duty Cycle
US1A-D
US1G
1.0
0.1
0.01
US1J-M
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMB
0.155(3.94)
0.130(3.30)
0.087 (2.20)
0.071 (1.80)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
SMB
4.26
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMB
4
H
igh Diode Semiconductor
©2020 ICPDF网 联系我们和版权申明