US1A-SMB [HDSEMI]

SMB Plastic-Encapsulate Diodes;
US1A-SMB
型号: US1A-SMB
厂家: Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述:

SMB Plastic-Encapsulate Diodes

文件: 总4页 (文件大小:1206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
US1A THRU US1M  
HD BK46  
SMB Plastic-Encapsulate Diodes  
High Efficient Rectifier  
Features  
I  
1A  
o
SMB  
VRRM  
50V-1000V  
High surge current capability  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
US1X  
:
X From A To M  
US  
1A 1B 1D 1F 1G 1J 1K 1M  
Item  
Symbol Unit  
Conditions  
50  
100 200 300 400 600 800 1000  
VRRM  
V
Repetitive Peak Reverse Voltage  
V
MaximumRMS Voltage  
V
RMS  
35  
70 140 210 280 420 560 700  
60Hz Half-sine wave, Resistance  
IF(AV)  
A
A
Average Forward Current  
1.0  
30  
load, Ta=115  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave,1 cycle,  
Ta=25℃  
IFSM  
TJ  
Junction Temperature  
Storage Temperature  
-55 ~ +150  
-55 ~ +150  
TSTG  
Electrical Characteristics (T =25Unless otherwise specified)  
a
US  
Item  
Symbol  
Unit  
V
Test Condition  
1A 1B 1D 1F 1G 1J 1K 1M  
1A 1B 1D 1F 1G 1J 1K 1M  
VFM  
IFM=1.0A  
1.0  
1.3  
1.7  
Peak Forward Voltage  
Peak Reverse Current  
Reverse Recovery time  
IRRM1  
IRRM2  
T =25℃  
5
a
μA  
VRM=VRRM  
T =125℃  
a
50  
IF=0.5A IR=1A  
IRR=0.25A  
trr  
ns  
50  
75  
751)  
271)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
Thermal  
Resistance(Typical)  
/W  
Rθ  
J-L  
Notes:  
er  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)  
copper pad areas  
1
H
igh Diode Semiconductor  
Typical Characteristics  
FIG.3: TYPICAL FORWARD CHARACTERISTICS  
100  
10  
TJ=25℃  
Pulse width=300us  
1% Duty Cycle  
US1A-D  
US1G  
1.0  
0.1  
0.01  
US1J-M  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VF(V)  
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time  
I
D
trr  
IF  
RL  
IF  
VR  
t
0
IRR  
IR  
2
H
igh Diode Semiconductor  
SMB  
0.155(3.94)  
0.130(3.30)  
0.087 (2.20)  
0.071 (1.80)  
0.180(4.57)  
0.160(4.06)  
0.012(0.305)  
0.006(0.152)  
0.096(2.44)  
0.084(2.13)  
0.060(1.52)  
0.030(0.76)  
0.008(0.203)MAX.  
0.220(5.59)  
0.205(5.21)  
Dimensions in inches and (millimeters)  
SMB  
4.26  
1.8  
JSHD  
JSHD  
3
H
igh Diode Semiconductor  
Reel Taping Specifications For Surface Mount Devices-SMB  
4
H
igh Diode Semiconductor  

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