SS52F [HDSEMI]
SMAF Plastic-Encapsulate Diodes;
| 型号： | SS52F |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMAF Plastic-Encapsulate Diodes 功效 瞄准线 测试 光电二极管 |
| 文件： | 总4页 (文件大小：1505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS52F THRU SS520F
HD AF60
SMAF Plastic-Encapsulate Diodes
Features
●I
5A
o
SMAF
●VRRM
20V-200V
●High surge current capability
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● SS52F-SS520F : SS52-SS520
SS5
Item
Symbol
Unit
Test Conditions
2F 3F 4F 5F 6F 8F 10F 15F 20F
VRRM
V
V
20 30 40 50 60 80 100 150 200
Repetitive Peak Reverse Voltage
14 21
Maximum RMS Voltage
28 35 42 56
70
105 140
V
RMS
60HZ Half-sine wave, Resistance
load, TL(Fig.1)
IF(AV)
A
A
5.0
Average Forward Current
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
150
TJ
℃
℃
-65~+125
-65~+150
Junction Temperature
Storage Temperature
TSTG
-65 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
SS5
2F 3F 4F 5F 6F 8F 10F 15F 20F
Item
Symbol Unit
Test Condition
VF
IF =5.0A
V
0.55
0.7
0.85
Peak Forward Voltage
Peak Reverse Current
0.95
0.2
IRRM1
IRRM2
T =25℃
a
0.5
mA
VRM=VRRM
T =100℃
20
10
a
551)
171)
Rθ
Between junction and ambient
Between junction and terminal
J-A
℃/
W
Thermal
Resistance(Typical)
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
5
4
3
2
1
0
150
120
90
60
30
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SS52F-SS54F
SS55F-SS520F
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles
TL(℃)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
FIG.4：
TYPICAL REVERSE CHARACTERISTICS
20
1,00
10
10
1
TJ=100 C
TJ=75 C
1
0.1
TJ=25 C
PULSE WIDTH=300 ms
1%DUTY CYCLE
0.1
SS52F-SS54F
SS55F-SS56F
SS58F-SS510F
SS515F-SS520F
TJ=25 C
0.01
0.001
0.01
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0 1.1
Voltage(%)
VF(V)
2
H
igh Diode Semiconductor
SMAF
.193(4.90)
.173(4.40)
.047(1.20)
.035(0.90)
.146(3.70)
.130(3.30)
.063(1.60)
.051(1.30)
.106(2.70)
.094(2.40)
.009(0.23)
.007(0.18)
.051(1.30)
.039(1.00)
Dimensions in inches and (millimeters)
SMAF
4.65
0.55
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMAF
4
H
igh Diode Semiconductor
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