SS36L [HDSEMI]
SMCK Plastic-Encapsulate Diodes;
| 型号： | SS36L |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMCK Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS36L
HD CK60
SMCK Plastic-Encapsulate Diodes
Features
SMC
●I
3A
o
60V
●VRRM
●High surge current capability
●
Polarity: Color band denotes cathode
●
Low Vf
Applications
●Rectifier
Marking
● SS36L
Item
Symbol Unit
Conditions
SS36L
Repetitive Peak Reverse Voltage
VRRM
V
60
42
MaximumRMS Voltage
V
V
RMS
60Hz
Half-sine
wave,
Average Forward Current
IF(AV)
A
A
3.0
Resistance load, Ta=100℃
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
120
IFSM
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+150
-55~+150
TSTG
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
Item
Unit
Test Condition
SS36L
0.55
Symbol
Peak Forward
Voltage
VF
I
F
=3A
V
T =25℃
a
IRRM1
T =25℃
a
0.5
Peak Reverse
Current
mA
VRM=VRRM
IRRM2
T =125℃
a
30
60
20
Rθ
Between junction and ambient
Between junction and lead
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
120
6.0
5.0
96
72
48
24
0
4.0
3.0
2.0
1.0
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1
10
100
25
50
75
100
125
150
Ta(℃)
Number of Cycles
FIG3:Instantaneous Forward Voltage
FIG.4：TYPICAL REVERSE CHARACTERISTICS
60
100
= 150 °C
40
TA
20
10
10
1
= 125 °C
TA
5.0
0.1
TA = 25 °C
1.0
0.5
0.01
0.001
0.0001
0.2
0.1
Ta=25℃
10
20
30
40
50
60
70
80
90 100
0
0.1
0.2 0.3
0.7
0.6
0.9 1.0 1.1 1.2
VF(V)
0.4
0.8
0.5
Voltage(%)
2
H
igh Diode Semiconductor
SMC Package Outline Dimensions
0.217(5.50)
0.240(6.10)
0.108 (2.75)
0.123 (3.25)
0.256(6.50)
0.280(7.10)
0.007(0.17)
0.012(0.30)
0.087(2.2)
0.106(2.7)
0.035(0.90)
0.055(1.40)
0.008(0.203)MAX.
0.291(7.40)
0.331(8.40)
Dimensions in inches and (millimeters)
SMC Suggested Pad Layout
6.5
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMC
4
H
igh Diode Semiconductor
相关型号：
SS36_NL
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
FAIRCHILD
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