SK32-SMC [HDSEMI]

SMC Plastic-Encapsulate Diodes;
SK32-SMC
型号: SK32-SMC
厂家: Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述:

SMC Plastic-Encapsulate Diodes

文件: 总4页 (文件大小:890K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SK32 THRU SK320  
HD CK55  
SMC Plastic-Encapsulate Diodes  
Schottky Rectifier  
Features  
SMC  
I  
3A  
o
VRRM  
20V-200V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
SK 3X  
:
X From 2 To 20  
Limiting Values (Absolute Maximum Rating)  
SK 3  
Item  
Symbol Unit  
Test Conditions  
2
3
4
5
6
8
10  
15  
20  
Repetitive Peak Reverse Voltage  
VRRM  
V
V
20 30 40 50 60 80 100 150 200  
14 21  
28 35 42 56  
70  
105 140  
MaximumRMS Voltage  
V
RMS  
60HZ Half-sine wave, Resistance  
load, TL(Fig.1)  
Average Forward Current  
IF(AV)  
A
A
3.0  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave ,1 cycle ,  
Ta =25  
IFSM  
100  
Junction Temperature  
Storage Temperature  
TJ  
-55~+125  
-55~+150  
TSTG  
-55 ~ +150  
Electrical Characteristics (T =25Unless otherwise specified  
a
SK 3  
6
Item  
Symbol Unit  
Test Condition  
2
3
4
5
8
10  
15 20  
VF  
IF =3.0A  
V
0.55  
0.7  
0.85  
0.95  
Peak Forward Voltage  
Peak Reverse Current  
IRRM1  
IRRM2  
T =25  
0.5  
0.1  
a
mA  
VRM=VRRM  
T =100℃  
10  
5.0  
a
551)  
171)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
Thermal  
Resistance(Typical)  
/  
W
Rθ  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  
Typical Characteristics  
FIG.1: FORWARD CURRENT DERATING CURVE  
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT  
120  
110  
100  
90  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
SK 32-SK 36  
SK 38-SK 320  
8.3ms Single Half Sine Wave  
JEDEC Method  
80  
Resistive or Inductive Load  
P.C.B. Mounted on 0.6"×0.6"  
(16mm×16mm)Copper Pad Areas  
70  
0
1
2
10  
20  
100  
25  
50  
75  
100  
125  
150  
TL()  
Number of Cycles  
FIG.4TYPICAL REVERSE CHARACTERISTICS  
FIG.3: TYPICAL FORWARD CHARACTERISTICS  
TJ=25℃  
Pulse width=300us  
1% Duty Cycle  
100  
100  
SK 32-SK 36  
SK 38-SK 320  
10  
1.0  
10  
Tj=125℃  
1.0  
0.1  
0.01  
Tj=75℃  
0.1  
SK 32-SK 34  
SK 35-SK 36  
SK 38-SK 310  
SK 315-SK 320  
0.01  
Tj=25℃  
0.001  
0
20  
40  
60  
80  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VF(V)  
Voltage(%)  
2
H
igh Diode Semiconductor  
SMC Package Outline Dimensions  
0.217(5.50)  
0.240(6.10)  
0.108 (2.75)  
0.123 (3.25)  
0.256(6.50)  
0.280(7.10)  
0.007(0.17)  
0.012(0.30)  
0.087(2.2)  
0.106(2.7)  
0.035(0.90)  
0.055(1.40)  
0.008(0.203)MAX.  
0.291(7.40)  
0.331(8.40)  
Dimensions in inches and (millimeters)  
SMC Suggested Pad Layout  
6.5  
1.8  
JSHD  
JSHD  
3
H
igh Diode Semiconductor  
Reel Taping Specifications For Surface Mount Devices-SMC  
4
H
igh Diode Semiconductor  

相关型号:

SK32-T1

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
WTE

SK32-T3

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
WTE

SK32-T3

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
SENSITRON

SK32-TP

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
MCC

SK320

MINIATURE SCHOTTKY BARRIER RECTIFIER
CHENG-YI

SK3200

3 Amp Schottky Rectifier 200 Volts
MCC

SK3200

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
MDD

SK3200-TP

3 Amp Schottky Rectifier 200 Volts
MCC

SK3200-TP-HF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
MCC

SK3200A

3A Patch Schottky diode 200V SMA series
SUNMATE

SK3200A-L-TP

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
MCC

SK3200A-L-TP-HF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
MCC