P4200TA [HDSEMI]
SMA Plastic-Encapsulate Diodes;
| 型号： | P4200TA |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMA Plastic-Encapsulate Diodes |
| 文件： | 总5页 (文件大小：1327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P0080TA THRU P4200TA
SMA Plastic-Encapsulate Diodes
Thyristor Surge Suppressors
Features
● Low switching voltage
SMAK
●
●
Low on-state voltage
Does not degrade surge capability after multiple surge
Events within limit
●
Fails short circuit when surged in excess of ratings
● Low Capacitance
Applications
●
Protect circuit
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
Parameter
Definition
Off-state Capacitance—typical capacitance measured in off state
CO
Rate of Rise of Current —maximum rated value of the acceptable rate
of rise in current over time
di /dt
IS
Switching Current—maximum current required to switch to on state
Leakage Current —maximum peak off-state current measured at VDRM
Holding Current —minimum current required to maintain on state
Peak Pulse Current—maximum rated peak impulse current
IDRM
IH
IPP
IT
On-state Current—maximum rated continuous on-state current
ITSM
VS
Peak One-cycle Surge Current —maximum rated one-cycle AC current
Switching Voltage —maximum voltage prior to switching to on state
Peak Off-state Voltage —maximum voltage that can be applied while
maintaining off state
VDRM
VF
On-state Forward Voltage —maximum forward voltage measured at rated
on-state current
VT
On-state Voltage —maximum voltage measured at rated on-state current
1
H
igh Diode Semiconductor
Electrical Characteristics
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
PART
VDRM
V
Min
IS
IT
A
IDRM
uA
VS
V
VT
V
IH
CO
pF
NUMBER
mA
mA
Min
Max
Max
Max
Typ
P0080TA
P0300TA
P0640TA
P1800TA
P2300TA
P2600TA
P3100TA
P3500TA
P4200TA
6
5
5
5
5
5
5
5
5
5
25
40
800
800
800
800
800
800
800
800
800
4
4
4
4
4
4
4
4
4
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
25
58
77
170
190
220
275
320
390
220
260
300
350
400
500
1、Vs is measured at 100KV/S
2、Off-state capacitance is measured in VDC=2V,VRMS=1V,F=1MHz
3、All measurements are made at an ambient temperature of 25℃
Surge Ratings
IPP
2x10us
(A)
IPP
8x20us
(A)
IPP
10x560us
(A)
IPP
10x1000us
(A)
VPP
ITSM
di/dt
10x700us
(V)
60Hz
(A)
Series
(A/us)
P0080TA
Thru
150
150
50
45
3000
20
500
P4200TA
Limiting Values (Absolute Maximum Rating)
Symbol
TJ
Parameter
Value
Unit
℃
Operaꢀng Juncꢀon Temperature
Storage Temperature Range
-40 to +150
-40 to +150
90
TS
℃
RθJA
Juncꢀon to Ambient on printed circuit
℃/W
2
H
igh Diode Semiconductor
Typical Characteristics
V-I Characteristics
tr x td Pulse Waveform
+I
t = rise ꢀme to peak value
r
= decay ꢀme to half value
t
d
Peak
Value
I
I
T
S
100
50
0
Wave fo rm = t x t
r
d
I
H
I
DRM
-V
+V
Half Value
V
DRM
V
T
V
S
t
r
t
d
0
t – Time (μs)
-I
Normalized VS Change vs. Junction Temperature
Normalized DC Holding Current vs. Case Temperature
2.0
1. 8
1. 6
1. 4
14
12
10
8
6
25 °C
25 °C
1. 2
4
1. 0
0.8
0.6
0.4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 1 00 120 1 40 160
Case Temperature (TC) - °C
-40 -20
0
20 40 60 80 100 120 140 160
Juncꢀon Temperature (TJ) – °C
3
H
igh Diode Semiconductor
SMAK
0.106(2.70)
0.096(2.45)
SMAK
4.12
1.8
JSHD
JSHD
4
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMA
5
H
igh Diode Semiconductor
相关型号：
©2020 ICPDF网 联系我们和版权申明