MURS320-SMB [HDSEMI]
SMB Plastic-Encapsulate Diodes;
| 型号： | MURS320-SMB |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMB Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：2079K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURS320 THRU MURS360
HD BK84
SMB Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●I
3A
o
SMB
●VRRM
200V-600V
●High surge current capability
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● MURS3X0
:
X From 2 To 6
MURS3
4 0
Item
Symbol
Unit
Test Conditions
6 0
20
30
VRRM
V
V
Repetitive Peak Reverse Voltage
200
300
400
280
600
420
V
140
MaximumRMS Voltage
210
RMS
60HZ Half-sine wave, Resistance
load, TL=100℃
IF(AV)
A
A
3.0
Average Forward Current
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
100
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃Unless otherwise specified)
MURS3
Item
Symbol
Unit
Test Condition
6 0
20
30
4 0
VF
IF =3.0A
Peak Forward Voltage
0.875
V
1.25
Maximum reverse recovery
time
50
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
25
IRRM1
IRRM2
T =25℃
5
a
μA
VRM=VRRM
Peak Reverse Current
T =100℃
a
100
551)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
121)
Rθ
J-L
Notes:
er
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)
copper pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
80
64
48
32
3.0
2.4
1.8
1.2
0.6
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
16
8.3ms SINGLE HALF SINE-WAVE
0
25
50
75
100
125
150
175
0
1
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
2%DUTY CYCLE
1
TJ=100 C
TJ=25 C
1
0.1
MURS320
MURS330 - MURS360
0.1
0.01
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMB
0.155(3.94)
0.130(3.30)
0.087 (2.20)
0.071 (1.80)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
SMB
4.26
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMB
4
H
igh Diode Semiconductor
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