MBR10200-F-CT [HDSEMI]
TO-220 Plastic-Encapsulate Diodes;
| 型号： | MBR10200-F-CT |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | TO-220 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10200(F)CT
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●I
10A
o
ITO- 220AB
TO- 220AB
200V
●VRRM
●High surge current capability
Applications
●Rectifier
1
1
2
Marking
2
3
3
● MBR10200(F)CT
PIN 1
PIN 3
PIN 2
CASE
Item
Symbol
Unit
V
Test Conditions
MBR10200(F)CT
Repetitive Peak Reverse Voltage
Average Rectified Output Current
VRRM
Io
200
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
A
10.0
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
A
120
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+150
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
Symbol
MBR10200(F)CT
Item
Unit
Test Condition
VF
IF =5.0A
0.85(TYP)
0.92(MAX)
Peak Forward Voltage
V
IRRM1
IRRM2
T =25℃
0.1
a
Peak Reverse Current
mA
VRM=VRRM
T =125℃
a
2.5
Thermal
Resistance(Typical)
2.01)
Between junction and case
Rθ
℃/W
J-C
Notes:
Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
12
10
8
210
180
150
120
90
8.3ms Single Half Sine Wave
JEDEC Method
6
4
60
2
30
0
50
70
90
110
130
150
Tc(℃)
0
1
10
100
Number of Cycles
FIG3:Instantaneous Forward Voltage
FIG.4：TYPICAL REVERSE CHARACTERISTICS
60
10
40
20
10
Tj=125℃
1.0
5.0
0.1
1.0
0.5
Tj=75℃
0.01
0.2
0.1
Tj=25℃
Ta=25℃
0.001
0
20
40
60
80
100
0
0.1
0.2 0.3
0.7
0.6
0.9 1.0 1.1 1.2
VF(V)
0.4
0.8
0.5
Voltage(%)
2
H
igh Diode Semiconductor
TO- 220
TO-220AB
ITO-220AB
JSHD
JSHD
3
H
igh Diode Semiconductor
TO- 220 P acking Information
Part Number
tube
Quantity
50 pieces
Size（mm）
530*33*7
inner box
outer container
1000 pieces
5000 pieces
558*150*40
570*235*170
4
H
igh Diode Semiconductor
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