ES5AC [HDSEMI]
SMC Plastic-Encapsulate Diodes;
| 型号： | ES5AC |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMC Plastic-Encapsulate Diodes 超快速恢复二极管 光电二极管 |
| 文件： | 总4页 (文件大小：1027K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES5AC THRU ES5JC
HD CK95
SMC Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
SMC
●I
5A
o
●VRRM
50V-600V
●High surge current capability
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● ES5XC
:
X From A To J
ES5
Item
Symbol
Unit
Test Conditions
A
B
C
D
F
G
H
J
VRRM
V
V
50 100 150 200 300 400 500 600
Repetitive Peak Reverse Voltage
V
35 70
MaximumRMS Voltage
105 140 210 280 350 420
RMS
60Hz Half-sine wave, Resistance
load, Ta=75℃
IF(AV)
A
A
5.0
Average Forward Current
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave,1 cycle,
Ta=25℃
IFSM
150
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T=25℃Unless otherwise specified)
ES5
Item
Symbol
Unit
V
Test Condition
A
B
C
D
F
G
H
J
VF
IF =3.0A
0.95
1.25
1.7
Peak Forward Voltage
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
35
IRRM1
IRRM2
T =25℃
10
a
μA
VRM=VRRM
Peak Reverse Current
T =100℃
a
500
Rθ
50
15
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
︶
FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
FIG.1:
5.0
4.0
3.0
2.0
175
150
8.3ms Single Half Sine Wave
JEDEC Method
100
S
ingle Phase
Half Wave 60HZ
Resisteve or
50
1. 0
1.0
0
Inductive Load
0.375''(9.5mm)
Lead Length
100
0
0
50
150
1
2
10
20
100
Ta(℃)
Number of Cycles
TYPICAL FORWARD CHARACTERISTICS
FIG.4:TYPICAL REVERSE CHARACTERISTICS
1000
20
10
ES5A-ES5D
ES5F-ES5G
100
10
4.0
2.0
ES5H-ES5J
Tj=125℃
1.0
0.4
0.2
Tj=100℃
Tj=25℃
1.0
0.1
0.1
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.02
0.01
0.01
0
20
1.2
40
60
80
100
0.8
1.0
1.4
0.6
1.6
1.8
2.0
VF(V)
Voltage(%)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMC Package Outline Dimensions
0.217(5.50)
0.240(6.10)
0.108 (2.75)
0.123 (3.25)
0.256(6.50)
0.280(7.10)
0.007(0.17)
0.012(0.30)
0.087(2.2)
0.106(2.7)
0.035(0.90)
0.055(1.40)
0.008(0.203)MAX.
0.291(7.40)
0.331(8.40)
Dimensions in inches and (millimeters)
SMC Suggested Pad Layout
6.5
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMC
4
H
igh Diode Semiconductor
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