ES3ABF [HDSEMI]
SMBF Plastic-Encapsulate Diodes;
| 型号： | ES3ABF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMBF Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3ABF THRU ES3JBF
HD BF80
SMBF Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●I
3A
o
SMBF
●VRRM
50V-600V
●High surge current capability
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● ES3ABF-ES3JBF : ES3AB-ES3JB
ES3
Item
Symbol
Unit
Test Conditions
ABF BBFCBFDBF FBF GBF HBF JBF
VRRM
V
50 100 150 200 300 400 500 600
Repetitive Peak Reverse Voltage
420
V
35 70
210
Maximum RMS Voltage
V
280 350
105 140
RMS
60HZ Half-sine wave, Resistance
load, TL=100℃
IF(AV)
A
A
3.0
Average Forward Current
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
100
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
ES3
Item
Symbol
Unit
V
Test Condition
IF =3.0A
ABF BBFCBF DBF FBF GBF HBF JBF
VF
trr
Peak Forward Voltage
0.95
1.25
1.7
Maximum reverse recovery
time
ns
IF=0.5A,IR=1.0A,Irr=0.25A
35
IRRM1
IRRM2
T =25℃
10
a
Peak Reverse Current
μA
VRM=VRRM
T =100℃
a
500
471)
121)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
FIG.1: FORWARD CURRENT DERATING CURVE
150
125
100
75
3.5
3.0
2.5
2.0
1.5
1.0
0.5
8.3ms Single Half Sine Wave
50
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
25
0
0
25
50
75
100
125
150
TL(℃)
0
1
10
100
Number of Cycles
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
Pulse width=300us
1% Duty Cycle
10000
1000
100
10
Tj=150℃
Tj=125℃
Tj=100℃
100
10
ES3ABF-DBF
ES3FBF-GBF
1.0
0.1
0.01
ES3HBF-JBF
Tj=25℃
1.0
0.1
0
20
40
60
80
100
Voltage(%)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.4
VF(V)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMBF
2.16(5.50)
2.00(5.10)
.051(1.30)
.043(1.10)
1.73(4.40)
1.65(4.20)
0.86(2.20)
0.75(1.90)
1.46(3.70)
1.38(3.50)
.100(0.26)
.007(0.18)
.040(1.00)
Dimensions in inches and (millimeters)
SMBF
4.80
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMBF
3.80
5.75
0.150
0.226
4
H
igh Diode Semiconductor
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