DSS32-F [HDSEMI]
SOD-123FL Plastic-Encapsulate Diodes;
| 型号： | DSS32-F |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOD-123FL Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSS32 THRU DSS320
HD FL 50
SOD123FL Plastic-Encapsulate Diodes
Features
●I
3A
20V-200V
●High surge current capability
o
SOD-123FL
●VRRM
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● DSS32-DSS320 : S32-S320
DSS3
Item
Unit
V
Test Conditions
Symbol
2
3
4
5
6
8
10
15 20
VRRM
20 30 40 50 60 80 100 150 200
Repetitive Peak Reverse Voltage
MaximumRMS Voltage
V
V
RMS
14 21 28 35 42 56
70
105 140
Average Forward Current
IF(AV)
A
A
3.0
60HZ Half-sine wave, Resistance
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
70
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+125
-55~+150
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
DSS3
Item
Symbol Unit
Test Condition
2
3
4
5
6
8
10
15
20
VF
IF =3.0A
V
0.55
0.7
0.85
0.95
Peak Forward Voltage
Peak Reverse Current
IRRM1
IRRM2
T =25℃
0.5
0.1
a
mA
VRM=VRRM
T =100℃
10
5.0
a
551)
171)
Rθ
Between junction and ambient
Between junction and terminal
J-A
℃/
W
Thermal
Resistance(Typical)
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
3.0
2.5
2.0
1.5
1.0
0.5
0
90
80
70
60
50
40
DSS32-DSS34
DSS35-DSS320
8.3ms Single Half Sine Wave
JEDEC Method
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5mm×5mm)Copper Pad Areas
1
2
10
20
100
0
25
50
75
100
125
150
Number of Cycles
TL(℃ )
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
Pulse width=300us
1% Duty Cycle
100
10
100
10
DSS32-DSS36
DSS38-DSS320
Tj=125
℃
1.0
1.0
0.1
Tj=75℃
0.1
DSS32-DSS34
DSS35-DSS36
DSS38-DSS310
DSS315-DSS320
0.01
Tj=25℃
0.001
0.01
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Voltage(%)
VF(V)
2
H
igh Diode Semiconductor
SOD-123FL
Cathode Band
Top View
2.8 ±0.15
0.8±0.1
3.7 ±0.15
Dimensions in millimeters
SOD-123FL
2.85
1.2
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD123FL
SOD13FL
4
H
igh Diode Semiconductor
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