DBF2205 [HDSEMI]

DBF Plastic-Encapsulate Bridge Rectifier;
DBF2205
型号: DBF2205
厂家: Jiangsu High diode Semiconductor Co., Ltd    Jiangsu High diode Semiconductor Co., Ltd
描述:

DBF Plastic-Encapsulate Bridge Rectifier

文件: 总3页 (文件大小:1332K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DBF22005 THRU DBF2210  
HD DB80  
DBF Plastic-Encapsulate Bridge Rectifier  
Features  
I  
2.2A  
50V-1000V  
High surge current capability  
o
DBF  
VRRM  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
General purpose 1 phase Bridge  
rectifier applications  
Marking  
DBF22XX  
XX:  
From 05 To 10  
DBF22  
04  
Item  
Symbol Unit  
Conditions  
005 01  
02  
06  
08  
10  
Repetitive Peak Reverse  
Voltage  
VRRM  
V
A
50  
100 200 400 600 800 1000  
Average Rectified Output  
Current  
IO  
60Hz sine wave, R-load, Tc=110℃  
60HZ sine wave, 1 cycle, Tj=25℃  
2.2  
Surge(Non-  
repetitive)Forward  
Current  
IFSM  
A
90  
33  
I2t  
A2S  
1mst<8.3ms Tj=25℃,Rating of per  
Current Squared Time  
Storage Temperature  
Junction Temperature  
diode  
Tstg  
Tj  
-55 ~+150  
-55 ~+150  
Electrical CharacteristicsTa=25Unless otherwise specified)  
Item  
Symbol Unit  
Test Condition  
Max  
Peak Forward Voltage  
Peak Reverse Current  
VFM  
V
1.02  
IFM=1.1A, Pulse measurement, Rating of per diode  
Tj=25℃  
Tj=125℃  
5
IRRM  
VRM=VRRM , Pulse measurement, Rating of per diode  
μA  
100  
R
55  
15  
10  
θJ-A  
Between junction and ambient  
Between junction and lead  
R
R
Thermal Resistance  
/W  
θJ-L  
θJ-C  
Between junction and case  
1
H
igh Diode Semiconductor  
Typical Characteristics  
FIG1:Io-Tc Curve  
FIG2:Surge Forward Current Capadility  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
105  
90  
75  
60  
45  
30  
15  
0
sine wave  
0
8.3ms 8.3ms  
1cycle  
non-repetitive  
Tj=25℃  
0
1
2
5
10  
20  
50  
100  
0
40  
80  
120  
160  
Number of Cycles  
Tc()  
FIG3: Forward Voltage  
FIG4:Typical Reverse Characteristics  
100  
6
4
Tj=125℃  
2
1
10  
0.5  
1.0  
Ta=25℃  
0.1  
Tj=25℃  
0.1  
0.05  
0.02  
0.01  
0.01  
0
20  
40  
60  
80  
100  
Voltage(%)  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VF(V)  
2
H
igh Diode Semiconductor  
DBF  
.059(1.50)  
.051(1.30)  
.256(6.70)  
.264(6.50)  
.045(1.15)  
.037(0.95)  
.016(0.40)  
.011(0.27)  
.205(5.20)  
.197(5.00)  
+
-
.041(1.05)  
.028(0.70)  
.291(7.40)  
.283(7.20)  
.339(8.60)  
.311(7.90)  
~
~
.122(3.10)  
.114(2.90)  
.003(0.08)  
.002(0.04)  
Dimensions in inches and (millimeters)  
DBF  
.280(7.10  
)
.079(2.00)  
.071(1.80)  
.360(9.15)  
JSHD  
JSHD  
3
H
igh Diode Semiconductor  

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