BAW56 [HDSEMI]
SOT-23 Plastic-Encapsulate Diodes;
| 型号： | BAW56 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOT-23 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：2691K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW56/BAV70/BAV99
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
SOT- 23
●
●
●
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
3
Marking:
2
BA
BAV70
BAV99
W56
1
MARKING:A1
MARKINGA4
MARKING:A7
Parameter
Symbol
Limit
Unit
Reverse Voltage
Forward Current
VR
IF
V
mA
A
70
200
2.0
IFSM
PD
Non-Repetitive Peak
Forward Surge Current @t=8.3ms
Power Dissipation
mW
℃/W
℃
225
556
150
Thermal Resistance Junction to Ambient
Junction Temperature
RθJA
TJ
Storage Temperature range
TSTG
-55~+150
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
V R
Min
Typ
Max
Unit
V
Conditions
IR=100μA
70
Reverse breakdown voltage
0.715
0.855
VF1
V
IF=1mA
VF2
V
IF=10mA
Forward voltage
VF3
VF4
1
V
V
IF=50mA
1.25
2.5
IF=150mA
Reverse current
IR
μA
VR=70V
1.5
6
Capacitance between terminals
CT
pF
VR=0,f=1MHz
IF = IR = 10mA,
Reverse recovery time
t r r
ns
Irr= 0.1 x IR, RL = 100Ω
1
H
igh Diode Semiconductor
Typical Characteristics
Reverse Characteristics
Forward Characteristics
1000
300
100
300
100
Ta=100℃
30
10
30
10
3
1
Ta=25℃
3
1
0.3
0.1
0.0
0.4
0.8
1.2
1.6
0
20
40
60
80
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
Power Derating Curve
Capacitance Characteristics
1.4
1.3
1.2
1.1
1.0
300
250
200
150
100
50
Ta=25℃
f=1MHz
0
0
5
10
15
20
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
REVERSE VOLTAGE VR (V)
2
H
igh Diode Semiconductor
SOT-23 Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
4
H
igh Diode Semiconductor
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