BAT42WS [HDSEMI]
S O D323 Plastic-Encapsulate Diodes;
| 型号： | BAT42WS |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | S O D323 Plastic-Encapsulate Diodes 光电二极管 |
| 文件： | 总4页 (文件大小：1997K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT42WS/BAT43WS
SOD323 Plastic-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
●
SOD3 23
Low Forward Voltage Drop
● Fast Switching Time
●
Surface Mount Package Ideally Suited for Automatic Insertion
Applications
●
Extreme fast switches
Marking
●
●
BAT42WS:X8
BAT43WS:Y9
Parameter
Symbol
VRRM
VR
Value
Unit
V
Repetitive Peak Reverse Voltage
Reverse Voltage
30
30
V
Average Rectified Output Current
Forward Continuous Current
IO
100
mA
mA
mA
A
IFM
200
Repetitive Peak Forward Current at t < 1 s
Non-repetitive Peak Forward Surge Current at t < 10 ms
Power Dissipation
IFRM
IFSM
Ptot
500
2
200
mW
O
Thermal Resistance, Junction to Ambient
Junction Temperature
625
C/W
Rθ
JA
O
C
Tj
- 55 to + 125
- 55 to + 125
O
C
Storage Temperature Range
TStg
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
Parameter
Symbol
Min.
Max.
-
Unit
Reverse Breakdown Voltage
V(BR)R
30
-
V
at IR = 100 μA
Reverse Current
at VR = 25 V
IR
500
nA
Forward Voltage
at IF = 200 mA
at IF = 10 mA
at IF = 50 mA
at IF = 2 mA
-
-
1
0.4
0.65
0.33
0.45
BAT42WS
BAT42WS
BAT43WS
BAT43WS
VF
V
-
0.26
-
at IF = 15 mA
Total Capacitance
at VR = 1 V, f = 1 MHz
CT
trr
-
-
10
5
pF
ns
Reverse Recovery Time
at IF = IR = 10 mA, IRR = 0.1 X IR, RL = 100 Ω
1
H
igh Diode Semiconductor
Typical Characteristics
2
H
igh Diode Semiconductor
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOD323
2.9
1.46
1.25
4
H
igh Diode Semiconductor
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