BAS19_18 [HDSEMI]
SOT-23 Plastic-Encapsulate Diodes;
| 型号： | BAS19_18 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOT-23 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：2547K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19/BAS20
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
SOT- 23
●
Fast Switching Speed
● Surface Mount Package Ideally Suited for Automatic Insertion
3
For General Purpose Switching Applications
High Conductance
●
●
2
Applications
●
1
Extreme fast switches
1
Marking:
3
●
BAS19 : JP
BAS20 : JR
2
Symbol
Parameter
Repetitive Peak Reverse Voltage
BAS19
120
BAS20
200
Unit
VRRM
V
VRWM
IO
Working Peak Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=
Power Dissipation
100
150
V
mA
A
200
2.5
IFSM
8.3ms
Pd
RθJA
TJ
250
500
150
mW
℃/W
℃
Thermal Resistance from Junction to Ambient
Junction temperature
Tstg
Storage Temperature
-55 ~ +150
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse breakdown voltage
BAS19
BAS20
BAS19
BAS20
120
200
IR=100μA
V
V(BR)
Reverse current
Forward voltage
VR=100V
VR=150V
0.1
μA
IR
IF=100mA
1
1.25
5
V
V
VF
IF=200mA
Diodes capacitance
CD
trr
VR=0V, f=1MHz
IF=IR=30mA,Irr=0.1*IR
pF
ns
Reveres recovery time
50
1
H
igh Diode Semiconductor
Typical Characteristics
Forward Characteristics
Reverse Characteristics
1000
100
10
1000
100
10
Pulsed
Pulsed
Ta=100 oC
1
Ta=25 oC
0.1
0.01
1
0.0
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
200
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
Power Derating Curve
Capacitance Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
300
250
200
150
100
50
Ta=25℃
f=1MHz
0
0
4
8
12
16
20
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
REVERSE VOLTAGE VR (V)
2
H
igh Diode Semiconductor
SOT-23 Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
4
H
igh Diode Semiconductor
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