CA3018 [HARRIS]
General Purpose Transistor Arrays; 通用晶体管阵列
| 型号： | CA3018 |
| 厂家： | 
HARRIS CORPORATION |
| 描述： | General Purpose Transistor Arrays |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CA3018, CA3018A
Semiconductor
January 1999
File Number 338.5
General Purpose Transistor Arrays
Features
• Matched Monolithic General Purpose Transistors
• h Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10%
The CA3018 and CA3018A consist of four general purpose
silicon NPN transistors on a common monolithic substrate.
FE
Two of the four transistors are connected in the Darlington
• V Matched
BE
[ /Title configuration. The substrate is connected to a separate
()
- CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2mV
- CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV
terminal for maximum flexibility.
/Sub-
ject ()
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
The transistors of the CA3018 and the CA3018A are well
suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete
transistors in conventional circuits but in addition they
provide the advantages of close electrical and thermal
matching inherent in integrated circuit construction.
• Operation From DC to 120MHz
• Wide Operating Current Range
• CA3018A Performance Characteristics Controlled from
10µA to 10mA
• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz
o
o
The CA3018A is similar to the CA3018 but features tighter
control of current gain, leakage, and offset parameters
making it suitable for more critical applications requiring
premium performance.
• Full Military Temperature Range . . . . . . . -55 C to 125 C
Applications
• Two Isolated Transistors and a Darlington Connected
Transistor Pair for Low Power Applications at Frequencies
from DC through the VHF Range
Part Number Information
TEMP.
PKG.
NO.
o
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
PART NUMBER RANGE ( C)
PACKAGE
mark
CA3018 (obsolete)
CA3018A
-55 to 125 12 Pin Metal Can T12.B
-55 to 125 12 Pin Metal Can T12.B
[
• See Application Note, AN5296 “Application of the CA3018
Integrated Circuit Transistor Array” for Suggested Applica-
tions
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
pdf-
Pinout
CA3018, CA3018A
(METAL CAN)
TOP VIEW
12
11
1
mark
Q
4
SUBSTRATE
10
2
4
9
3
Q
3
Q
8
1
Q
2
5
7
6
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright © Harris Corporation 1999
1
CA3018, CA3018A
Absolute Maximum Ratings
Thermal Information
o
o
CA3018
. . . . . . . . . . 15V
CA3018A
15V
Thermal Resistance (Typical, Note 2)
Metal Can Package . . . . . . . . . . . . . . .
θ
( C/W)
θ
( C/W)
JA
JC
Collector-to-Emitter Voltage, V
CEO
200
120
Collector-to-Base Voltage, V
. . . . . . . . . . . . 20V
30V
40V
5V
50mA
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
CBO
Collector-to-Substrate Voltage, V
o
(Note 1). . 20V
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .175 C
CIO
. . . . . . . . . . . . . 5V
o
o
Emitter-to-Base Voltage, V
Maximum Storage Temperature Range. . . . . . . . . . -65 C to 150 C
EBO
o
Collector Current, I . . . . . . . . . . . . . . . . . . . . . 50mA
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C
Operating Conditions
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-
tion.
2. θ is measured with the component mounted on an evaluation PC board in free air.
JA
o
Electrical Specifications T = 25 C
A
CA3018
TYP
CA3018A
TYP MAX UNITS
PARAMETER
DC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
Collector Cutoff Current (Figure 1)
Collector Cutoff Current (Figure 2)
I
I
V
V
= 10V, I = 0
-
-
0.002
100
5
-
-
0.002
40
nA
CBO
CB
CE
E
= 10V, I = 0
See
See
0.5
µA
CEO
B
Fig. 2
Fig. 2
Collector Cutoff Current Darlington Pair
Collector-to-Emitter Breakdown Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Collector-to-Emitter Saturation Voltage
I
V
= 10V, I = 0
-
15
20
5
-
-
-
-
5
µA
V
V
V
V
V
-
CEOD
CE
B
V
V
V
I
I
I
I
I
= 1mA, I = 0
24
-
15
30
5
24
-
(BR)CEO
(BR)CBO
(BR)EBO
C
C
E
C
B
B
= 10µA, I = 0
60
-
60
-
E
= 10µA, I = 0
7
-
7
-
C
V
= 10µA, I = 0
CI
20
-
60
-
40
-
60
-
0.5
-
(BR)CIO
V
= 1mA, I = 10mA
0.23
100
100
54
-
0.23
100
100
54
CES
C
Forward Current Transfer Ratio (Note 3)
(Figure 3)
h
V
= 3V
I
I
I
= 10mA
= 1mA
= 10µA
-
-
50
60
30
0.9
FE
CE
C
C
C
30
-
200
200
-
-
-
-
-
Magnitude of Static-Beta Ratio (Isolated
V
= 3V,
0.9
0.97
0.97
-
-
CE
Transistors Q and Q ) (Figure 3)
I = I = 1mA
C1 C2
1
2
Forward Current Transfer Ratio Darling-
ton Pair (Q and Q ) (Figure 4)
h
V
V
V
= 3V
= 3V
I
I
I
I
= 1mA
1500
5400
-
-
-
2000
1000
5400
2800
-
-
-
-
FED
CE
CE
CE
C
C
E
E
3
4
= 100µA
= 1mA
-
-
-
-
Base-to-Emitter Voltage (Figure 5)
Input Offset Voltage (Figures 5, 7)
V
0.715
0.800
0.48
-
0.600 0.715 0.800
V
BE
= 10mA
-
-
-
0.800 0.900
V
= 3V, I = 1mA
5
0.48
-1.9
2
-
mV
E
V
BE1
BE2
–V
o
Temperature Coefficient: Base-to-Emitter
Voltage Q , Q (Figure 6)
V
= 3V, I = 1mA
-
-1.9
-
-
mV/ C
CE
E
∆V
BE
------------------
1
2
∆T
2
CA3018, CA3018A
o
Electrical Specifications T = 25 C (Continued)
A
CA3018
TYP
CA3018A
TYP MAX UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
Base (Q )-to-Emitter (Q ) Voltage Dar-
lington Pair (Figure 8)
V
(V
)
V
V
= 3V
I
I
= 10mA
= 1mA
-
-
-
1.46
-
-
-
-
1.10
-
1.46
1.60
1.50
-
V
V
3
4
BED 9-1
CE
E
1.32
1.32
E
o
Temperature Coefficient: Base-to-Emitter
Voltage Darlington Pair (Q and Q )
= 3V, I = 1mA
4.4
4.4
mV/ C
CE
E
∆V
BED
3
4
---------------------
∆T
(Figure 9)
o
V
– V
Temperature Coefficient: Magnitude
of Input Offset Voltage
V
= 6V, V = -6V,
EE
= I = 1mA
-
-
10
-
-
-
-
10
-
-
µV/ C
CC
BE1
BE2
------------------------------------
I
∆T
C1 C2
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(Figures 10 - 12)
NF
f = 1kHz, V
= 3V,
= 100µA, Source
3.25
3.25
dB
CE
I
C
Resistance = 1kΩ
Low Frequency, Small Signal Equivalent
Circuit Characteristics
Forward Current Transfer Ratio
(Figure 13)
h
f = 1kHz, V
= 3V,
= 3V,
= 3V,
= 3V,
-
-
-
-
110
3.5
-
-
-
-
-
-
-
-
110
3.5
-
-
-
-
-
FE
CE
CE
CE
CE
I
= 1mA
C
Short Circuit Input Impedance
(Figure 13)
h
f = 1kHz, V
= 1mA
kΩ
µS
-
IE
I
C
Open Circuit Output Impedance
(Figure 13)
h
h
f = 1kHz, V
= 1mA
15.6
1.8 x
15.6
1.8 x
OE
RE
I
C
Open Circuit Reverse Voltage
Transfer Ratio (Figure 13)
f = 1kHz, V
= 1mA
-4
-4
I
10
10
C
Admittance Characteristics
Forward Transfer Admittance
(Figure 14)
Y
f = 1MHz, V
= 3V,
= 3V,
= 3V,
= 3V,
-
-
-
31 -
j1.5
-
-
-
-
-
-
31 -
j1.5
-
-
-
mS
mS
mS
mS
FE
CE
CE
CE
CE
I
= 1mA
C
Input Admittance (Figure 15)
Y
f = 1MHz, V
= 1mA
0.3 +
j0.04
0.3 +
j0.04
IE
I
C
Output Admittance (Figure 16)
Y
f = 1MHz, V
= 1mA
0.001
+ j0.03
0.001
+ j0.03
OE
I
C
Reverse Transfer Admittance
(Figure 17)
Y
f = 1MHz, V
= 1mA
See Figure 17
RE
I
C
Gain Bandwidth Product (Figure 18)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
NOTE:
f
V
V
V
V
= 3V, I = 3mA
300
500
0.6
-
-
-
-
300
500
0.6
-
-
-
-
MHz
pF
T
CE
EB
CB
C
C
C
= 3V, I = 0
-
-
-
-
-
-
EB
E
= 3V, I = 0
0.58
2.8
0.58
2.8
pF
CB
C
C
= 3V, I = 0
pF
CI
CI
C
3. Actual forcing current is via the emitter for this test.
3
CA3018, CA3018A
Typical Performance Curves
2
3
10
10
I
= 0
I
= 0
B
E
2
10
10
V
= 15V
V
= 10V
CB
= 10V
CE
V
CB
= 5V
10
1
1
V
CB
V
= 5V
CE
-1
10
-2
-3
-4
-1
10
10
10
10
-2
10
-3
10
0
25
50
75
100
125
0
25
50
75
100
125
o
o
AMBIENT TEMPERATURE ( C)
AMBIENT TEMPERATURE ( C)
FIGURE1. TYPICALCOLLECTOR-TO-BASECUTOFFCURRENT
vs TEMPERATURE
FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF
CURRENT vs TEMPERATURE
120
110
100
90
1.1
8000
V
T
= 3V
o
V
T
= 3V
o
CE
CE
= 25 C
7000
6000
5000
4000
3000
2000
1000
0
= 25 C
A
A
h
FE
1
h
h
FE1
FE2
OR
-------------
-------------
h
h
80
0.9
0.8
FE2
FE1
70
60
50
0.01
0.1
1
10
0.1
1
10
EMITTER CURRENT (mA)
EMITTER CURRENT (mA)
FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER
RATIO AND BETA RATIO FOR TRANSISTORS Q
FIGURE 4. TYPICAL STATIC FORWARD CURRENT - TRANSFER
RATIO FOR DARLINGTON CONNECTED
1
AND Q vs EMITTER CURRENT
2
TRANSISTORS Q AND Q vs EMITTER CURRENT
3
4
4
3
2
1
0
0.8
0.7
0.6
0.5
0.4
V
= 3V
CE
V
T
= 3V
o
CE
= 25 C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
A
V
BE
I
= 3mA
E
I
= 1mA
E
I
= 0.5mA
E
V
= |V
- V |
BE2
IO
BE1
-75
-50
-25
0
25
50
75
100
125
0.01
0.1
1.0
10
o
AMBIENT TEMPERATURE ( C)
EMITTER CURRENT (mA)
FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC AND INPUT OFFSET VOLTAGE
FOR Q AND Q vs EMITTER CURRENT
FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE
CHARACTERISTIC FOR EACH TRANSISTOR vs
TEMPERATURE
1
2
4
CA3018, CA3018A
Typical Performance Curves (Continued)
1.7
1.6
5
V
= 3V
V
= 3V
o
CE
CE
= 25 C
T
A
4
I
= 10mA
E
3
1.5
1.4
1.3
1.2
2
0.75
0.50
0.25
0
I
= 1mA
E
I
= 0.1mA
E
-75
-50 -25
0
25
50
75
100 125
0.1
1
10
o
EMITTER CURRENT (mA)
AMBIENT TEMPERATURE ( C)
FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs
TEMPERATURE
FIGURE 8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC
FOR DARLINGTON PAIR (Q AND Q ) vs EMITTER
3
4
CURRENT
2
V
R
= 3V
CE
S
V
= 3V
CE
= 500Ω
o
I
I
= 3mA
= 1mA
E
E
T
= 25 C
A
20
15
10
5
1.75
1.50
1.25
1
f = 0.1kHz
f = 1kHz
I
= 0.5mA
E
f = 10kHz
0.75
0
-75
-50
-25
0
25
50
75
100
125
0.01
0.1
COLLECTOR CURRENT (mA)
1
o
AMBIENT TEMPERATURE ( C)
FIGURE 9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC
FOR DARLINGTON PAIR (Q AND Q ) vs
FIGURE 10. NOISE FIGURE vs COLLECTOR CURRENT
3
4
TEMPERATURE
30
V
R
= 3V
CE
S
V
R
= 3V
CE
S
= 1000Ω
= 10000Ω
o
T
= 25 C
o
A
25
20
15
10
5
T
= 25 C
20
15
A
f = 0.1kHz
f = 0.1kHz
f = 1kHz
f = 1kHz
10
5
f = 10kHz
f = 10kHz
0
0
0.01
0.1
COLLECTOR CURRENT (mA)
1
0.01
0.1
1
COLLECTOR CURRENT (mA)
FIGURE 11. NOISE FIGURE vs COLLECTOR CURRENT
FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT
5
CA3018, CA3018A
Typical Performance Curves (Continued)
100
COMMON EMITTER CIRCUIT, BASE INPUT
V
= 3V
CE
f = 1kHz
o
T
= 25 C, V
= 3V, I = 1mA
A
CE C
40
30
20
10
0
h
o
h
h
h
h
= 110
OE
FE
IE
RE
OE
T
= 25 C
A
= 3.5kΩ
AT
-4
1mA
= 1.88 x 10
= 15.6µS
h
IE
10
h
RE
g
FE
h
FE
RE
1.0
0.1
b
h
-10
-20
FE
h
IE
0.1
1
10
FREQUENCY (MHz)
100
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT
FIGURE 14. FORWARD TRANSFER ADMITTANCE (Y
)
FE
6
COMMON EMITTER CIRCUIT, BASE INPUT
6
COMMON EMITTER CIRCUIT, BASE INPUT
o
o
= 25 C, V
T
= 3V, I = 1mA
CE C
A
T
= 25 C, V
= 3V, I = 1mA
A
CE C
5
4
3
5
4
b
OE
3
2
1
b
IE
2
1
0
g
IE
g
OE
0
0.1
1
10
FREQUENCY (MHz)
100
0.1
1
10
FREQUENCY (MHz)
100
FIGURE 15. INPUT ADMITTANCE (Y
IE
)
FIGURE 16. OUTPUT ADMITTANCE (Y )
OE
V
T
= 3V
COMMON EMITTER CIRCUIT, BASE INPUT
CE
= 25 C
o
o
T
= 25 C, V
= 3V, I = 1mA
A
A
CE C
1000
900
800
700
600
500
400
300
200
100
g
IS SMALL AT FREQUENCIES
LESS THAN 500MHz
RE
0
b
RE
-0.5
-1.0
-1.5
-2.0
1
10
100
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
COLLECTOR CURRENT (mA)
FREQUENCY (MHz)
FIGURE 17. REVERSE TRANSFER ADMITTANCE (Y
)
FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (f ) vs
T
RE
COLLECTOR CURRENT
6
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