S9345_15 [HAMAMATSU]
Si PIN photodiode;
| 型号： | S9345_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si PIN photodiode |
| 文件： | 总4页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si PIN photodiode
S9345
Dual-element photodiode using newly devel-
oped small, thin package
The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume
reduced to one-fifth that of similar type photodiodes using conventional package. In order to extend the detection area
when used as a reflection-mode optical switch, the entire photodiode photosensitive area of 1.5 mm wide and 5.6 mm long
is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm.
Features
Applications
Miniature and thin plastic package: 3.4 × 7.0 × 0.95 t mm
Surface mount type
Optical switches
Asymmetrical dual-element PIN photodiode
Photosensitive area
Photodiode A: 1.5 × 1.5 mm
Photodiode B: 1.5 × 4.1 mm
High sensitivity
Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Reflow soldering conditions*1
Symbol
VR max
Topr
Tstg
Tsol
Value
20
-25 to +85
Unit
V
°C
°C
-
-40 to +100
Peak temperature 235 °C, 1 time (see page 3)
*1: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Symbol
Condition
Min.
-
-
0.5
-
Typ.
320 to 1100
960
Max.
Unit
nm
nm
λ
λp
S
-
-
-
-
λ=780 nm
0.55
2.6
A/W
Photodiode A
Short circuit
current
VR=0 V, 2856 K
100 lx
Isc
ID
μA
nA
pF
Photodiode B
-
7.1
-
Dark current
VR=10 V, all elements
-
-
-
0.4
4
10
5
8
20
Photodiode A
Photodiode B
Terminal
capacitance
Ct
VR=10 V, f=1 MHz
Ω
VR=10 V, RL=50
λ=780 nm, -3 dB
Cutoff frequency
fc
7
15
-
MHz
1
www.hamamatsu.com
Si PIN photodiode
S9345
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
(Typ.)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
QE=100%
0.1
0
0
-0.2
200
400
600
800
1000
1200
400
500
600
700
800
900 1000 1100
Wavelength (nm)
Wavelength (nm)
KPINB0293EA
KPINB0294EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
(Typ. Ta=25 °C, f=1 MHz)
1 nF
100 nA
10 nA
1 nA
100 pF
Photodiode B
10 pF
100 pA
Photodiode A
1 pF
10 pA
1 pA
100 fF
0.01
0.1
1
10
100
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KPINB0296EA
KPINB0295EA
2
Si PIN photodiode
S9345
Dimensional outline (unit: mm)
0.2
Photosensitive area
1.5
a
a
b
b
ACTIVE AREA
0.3
3.4*
0.3
4.0 0.2
Photosensitive
surface
Anode A
Cathode common
Anode B
Cathode common
Cathode common
4.0 0.2
3.4*
2.8
Tolerance unless otherwise noted: 0.1, 2°
Chip position accuracy with respect to the
package dimensions marked *
X, Y≤ 0.2, θ≤ 2°
Electrodes
Part of the lead frame on the bottom of the
package might not be covered with epoxy resin.
Don’t contact this device to a conductor for protecting
from short circuit.
KPINA0095EB
Recommended land pattern (unit: mm)
4.6
3.0
KPINC0026EA
3
Si PIN photodiode
S9345
Measured example of temperature profile with our hot-air reflow oven for product testing
This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of from 5 to 30 °C and a
humidity of 60% or less, and perform soldering within 24 hours.
300 °C
235 °C max.
220 °C
180 °C
170 °C
Preheat
70 to 90 s
Soldering
40 s max.
Time
KPINB0394EB
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Surface mount type products
Technical information
∙ Si photodiode / Application circuit examples
Information described in this material is current as of November, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
4
Cat. No. KPIN1069E03 Nov. 2014 DN
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