S12742-254_15 [HAMAMATSU]
Photodiode with interference filter for monochromatic light (254 nm) detection;
| 型号： | S12742-254_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Photodiode with interference filter for monochromatic light (254 nm) detection |
| 文件： | 总4页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si photodiode
S12742-254
Photodiode with interference filter for
monochromatic light (254 nm) detection
The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral
response width is extremely narrow at 10 nm (FWHM), allowing accurate photometry without any effects of stray light. The
center wavelength is 254 nm typ. The S12742-254 can be customized to support other peak sensitivity wavelengths such as
340 nm, 560 nm, and 650 nm.
Features
Applications
Si photodiode with interference filter
Analytical instruments
UV monitors (mercury lamp monitor, etc.)
Monochromatic light (254 nm) detection
Structure
Parameter
Package
Photosensitive area
Specification
TO-5
3.61 3.61
Unit
-
mm
×
Absolute maximum ratings
Parameter
Reverse voltage
Symbol
VR max Ta=25 °C
Condition
Value
5
Unit
V
Operating temperature
Storage temperature
Topr
Tstg
-20 to +60
-55 to +80
°C
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Center wavelength
Symbol
CWL
Condition
Min.
252
Typ.
254
Max.
256
Unit
nm
Spectral response half-
width
FWHM
8
10
12
nm
Photosensitivity
Dark current
S
ID
λ=254 nm
VR=10 mV
12
-
18
2
-
25
mA/W
pA
Dark current temperature
coefficient
TCID
tr
-
-
1.12
1
-
-
times/°C
VR=0 V, RL=1 kΩ
10% to 90%
Rise time
μs
Terminal capacitance
Shunt resistance
Noise equivalent power
Ct
Rsh
NEP
VR=0 V, f=10 kHz
VR=10 mV
VR=0 V, λ=λp
-
0.4
-
500
5
×
750
-
-
pF
GΩ
W/Hz1/2
9.1 10-14
1
www.hamamatsu.com
Si photodiode
S12742-254
Spectral response
(Typ. Ta=25 °C)
50
40
30
20
10
0
Note: Wavelengths other than 254 nm will be
provided on a made to order basis.
200
300
400
500
600
700
800
Wavelength (nm)
KSPDB0333EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
(Typ. Ta=25 °C)
1 nA
100 pA
10 pA
1 pA
10 nF
1 nF
100 pF
10 pF
100 fA
0.01
0.1
1
10
0.1
1
10
Reverse voltage (V)
Reverse voltage (V)
KSPDB0332EA
KSPDB0335EA
2
Si photodiode
S12742-254
Dimensional outline (unit: mm)
Y
X
Photosensitive area
3.61 × 3.61
Photosensitive surface
ϕ0.45
Lead
ϕ5.08 0.2
Tolerance unless otherwise noted: 0.2
Distance from photosensitive area
center to cap center
-0.3≤X≤+0.3
Case
-0.3≤Y≤+0.3
The glass window may extend
a maximum of 0.2 mm beyond
the upper surface of the cap.
KSPDA0205EA
3
Si photodiode
S12742-254
Precautions against UV light exposure
∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV
sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time,
and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you
check the tolerance under the ultraviolet light environment that the product will be used in.
∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component
materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the
photosensitive area by using an aperture or the like.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic packages
Technical information
∙ Si photodiode / Application circuit examples
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
4
Cat. No. KSPD1082E03 Oct. 2015 DN
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