S12271_15 [HAMAMATSU]
Si PIN photodiode;
| 型号： | S12271_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | Si PIN photodiode |
| 文件： | 总4页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si PIN photodiode
S12271
Large area, high-speed PIN photodiode for UV
to near IR photometry
The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the
light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power
meters.
Features
Applications
Quartz glass window
Optical power meters
Radiation detectors
High UV sensitivity
Large photosensitive area: φ4.1 mm
High-speed response: 60 MHz (VR=100 V)
Structure
Parameter
Specification
TO-8
Unit
mm
Package
Photosensitive area size
Effective photosensitive area
φ4.1
13.2
mm
mm2
Absolute maximum ratings
Parameter
Reverse voltage
Symbol
V max
R
Specification
120
Unit
V
Power dissipation
Operating temperature
Storage temperature
P
Topr
Tstg
50
mW
°C
°C
-20 to +60
-55 to +80
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Symbol
λ
λp
Condition
Min.
-
-
Typ.
190 to 1100
960
Max.
-
-
Unit
nm
nm
λ=λp
λ=200 nm
VR=100 V
0.4
0.08
-
-
-
0.5
0.10
0.1
1.15
-
-
30
-
20
A/W
A/W
nA
times/°C
pF
Photosensitivity
S
Dark current
Temperature coefficient of ID
Terminal capacitance
ID
TCID
Ct
10
VR=100 V, f=1 MHz
VR=100 V, RL=50 Ω
-3 dB
λ=λp, VR=100 V
Cutoff frequency
fc
-
-
60
-
-
MHz
Noise equivalent power
NEP
1.5 × 10-14
W/Hz1/2
1
www.hamamatsu.com
Si PIN photodiode
S12271
Spectral response
Photosensitivity temperature characteristics
(Typ.)
(Typ. Ta=25 °C)
+2.0
+1.5
+1.0
+0.5
0
0.6
0.5
0.4
0.3
0.2
QE=100%
-0.5
-1.0
0.1
0
190 300 400 500 600 700 800 900 1000 1100
190 300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Wavelength (nm)
KPINB0386EA
KPINB0387EA
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10 nF
(Typ. Ta=25 °C)
10 nA
1 nA
1 nF
100 pF
100 pA
10 pF
1 pF
10pA
1 pA
0.01
0.1
1
10
100
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KPINB0388EA
KPINB0389EA
2
Si PIN photodiode
S12271
Dimensional outline (unit: mm)
Y
X
Photosensitive area
4.1
Quartz glass
Photosensitive surface
ġġġ0.45
Lead
7.5 0.2
Index mark ( 1.4)
1.0 max.
Case
Distance from photosensitive
area center to cap center
-0.4≤X≤+0.4
-0.4≤Y≤+0.4
KPINA0114EA
Precautions against UV light exposure
∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV
sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time,
and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you
check the tolerance under the ultraviolet light environment that the product will be used in.
∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component
materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the
photosensitive area by using an aperture or the like.
3
Si PIN photodiode
S12271
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
Technical information
∙ Si photodiode/Application circuit examples
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
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Cat. No. KPIN1085E03 Oct. 2015 DN
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