S11212_15 [HAMAMATSU]

16-element Si photodiode arrays;


型号：	S11212_15
厂家：	HAMAMATSU CORPORATION
描述：	16-element Si photodiode arrays
文件：	总8页 (文件大小：623K)
中文：	中文翻译
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16-element Si photodiode arrays

S11212-421

S11212-321

S11212 series

S11212-121

Back-illuminated photodiode arrays for X-ray

non-destructive inspection

S11212-021

The S11212 series is a back-illuminated type 16-element photodiode array speciﬁcally designed for non-destructive X-ray

inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous prod-

uct (S5668 series). The back-illuminated photodiode array is also simple to handle and easily couples to scintillators without

having to worry about wire damage because there are no bonding wires and photosensitive areas on the back side. The

S11212 series can replace the S5668 series since their package size and pin connections are identical.

Features

Applications

Spectral response range: 340 to 1100 nm (S11212-021)

Element size: 1.175 (W) × 2.0 (H) mm/one element

Element pitch: 1.575 mm ( × 16 pixels)

X-ray non-destructive inspection, etc.

Mounted on board size: 25.4 (W) × 20.0 (H) mm

Long and narrow format by multiple arrays

Supports dual energy imaging

(When used in an upper and lower two-layer combination. See page 7.)

Selection guide

Scintillator

Type no.

Application example

Type

Afterglow

Crosstalk

S11212-021

S11212-121

None*

General photometry

X-ray non-destructive inspection of slow-moving

objects (baggage inspection, etc.)

X-ray non-destructive inspection of fast-moving

objects (baggage inspection, etc.)

X-ray non-destructive inspection (at low X-ray

energy)

CsI(Tl)

Large

Small

Low

S11212-321

S11212-421

GOS ceramic

Phosphor sheet

Low

May occur.

This photodiode array as it is does not function as an X-ray detector.

An appropriate scintillator or phosphor sheet should be added at user’s side.

Precautions

CsI(TI) scintillator of the S11212-121 has deliquescence. Avoid storing or using the S11212-121 at high humidity.

www.hamamatsu.com

16-element Si photodiode arrays

Back-illuminated type

The S11212 series photodiode arrays have a back-illuminated type structure. This structure uses no fragile easily-broken bonding wires since

the photodiode array output terminals are directly connected by bump bonding to the electrodes on the board. This structure is robust since the

board wiring is laid out within the board. The photodiode surface for coupling the scintillator has no bonding wires or photosensitive areas, so

there is less risk of damaging the photodiode array. The S11212 series is also resistant to effects from temperature cycle and so ensures high

reliability.

S11212 series

Feature

Cross-section diagram (comparison between front-illuminated type and back-illuminated type)

Front-illuminated type

(previous product)

Back-illuminated type

(New)

X-ray

Scintillator

X-ray

Scintillator

Photodiode

Protective resin

Active area

Photodiode

Bonding wire

Active area

Bump electrode

KMPDA0280EA

Feature

Multiple applications

Superb uniformity

The S11212 series supports dual energy imaging. To simultaneously

detect high energy X-rays and low energy X-rays, the S11212 series

is designed so that two photodiode arrays, each with a different

scintillator, are combined in an upper and lower two-layer format.

Arranging two or more S11212 series photodiode arrays in a row in

close proximity also forms a line sensor that allows measurement of

long objects.

Our unique sensor design minimizes variations in sensitivity between

photodiode elements as well as at the sensor ends. The S11212 se-

ries offers signiﬁcantly improved sensitivity uniformity compared to

our previous product (S5668 series) and so provides optimal X-ray

images.

Uniformity

(Typ. Ta=25 °C)

110

Sensor structure example

105

S11212 series

100

Previous product

Two-layer combination

Multi-array format

8 9 10 11 12 13 14 15 16

Element no.

KMPDB0352EA

16-element Si photodiode arrays

S11212 series

Absolute maximum ratings

Parameter

Symbol

VR Max.

Topr

S11212-021

-20 to +60

-20 to +80

S11212-121/-321/-421

Unit

°C

Reverse voltage

Operating temperature*¹

Storage temperature*¹

-10 to +60

-20 to +70

Tstg

*1: No condensation

Electrical and optical characteristics (Ta=25 °C, per element, S11212-021 characteristics except X-ray sensitivity)

Parameter

Spectral response range

Peak sensitivity wavelength

Symbol

λp

Condition

Min.

380

550

Typ.

340 to 1100

Max.

460

670

Unit

920

420

610

6.0

3.5

3.0

λ=540 nm

λ=λp

Photo sensitivity

mA/W

S11212-021

S11212-121

S11212-321

S11212-421

X-ray sensitivity

IscX

Dark current

VR=10 mV

VR=0 V, RL=1 kΩ

10 to 90%, λ=658 nm

VR=0 V, f=10 kHz

Rise time

6.5

Terminal capacitance

*2: These are reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum ﬁlter t=6 mm, 830 mm). X-ray sensitivity depends on

the X-ray equipment operating and setup conditions.

Spectral response (characteristics without scintillator)

(Typ. Ta=25 °C)

0.8

QE=100 %

0.7

S11212-021

0.6

0.5

0.4

0.3

0.2

product

S11212-121

S11212-321

S11212-421

0.1

200

400

600

800

1000

1200

Wavelength (nm)

* Spectral response characteristics of the S11212-121/

-321/-421 include the transmittance and reflectance

of the adhesive resin used to bond a scintillator.

KMPDB0350EA

16-element Si photodiode arrays

S11212 series

Emission spectrum of scintillator and spectral response

S11212-121

S11212-321

(Typ.)

100

QE withcut

scintillator

QE withcut

scintillator

Emission

spectrum

of CsI(TI)

scintillator

spectrum

of ceramic

scintillator

200

400

600

800

1000

1200

200

400

600

800

1000

1200

Wavelength (nm)

KSPDB0282EB

KSPDB0281EB

Scintillator speciﬁcations

Parameter

Peak emission wavelength

Condition

CsI(TI)

560

Ceramic

512

2.2

Unit

cm^-1

μs

g/cm³

X-ray absorption coefﬁcient

Refractive index

Decay constant

Afterglow

100 keV

1.7

0.3

4.51

at peak emission wavelength

100 ms after X-ray turn off

0.01

7.34

Density

Color

Transparent

±10

Light yellow-green

±5

Sensitivity non-uniformity

16-element Si photodiode arrays

S11212 series

Dimensional outlines (unit: mm, tolerance: ±0.1 mm unless otherwise noted)

S11212-021

-0.3

25.4

P1.575 × 15 = 23.625

1.0 0.15

1.575

1.2⁺^-0⁰^.2^.3

Active area

1.175 × 2.0

Photodiode chip

1 2 3 4 5 6 7 8 9

10 11 12 13 14 15 16

Glass epoxy board

3.5 0.5

2.54

P 2.54 × 8 = 20.32

KMPDA0269EB

S11212-121

-0.3

25.4

1.0 0.15

P1.575 × 15 = 23.625

1.575

1.2⁺^-0⁰^.2^.3

4.0

Active area

1.175 × 2.0

Photodiode chip

CsI(Tl) 3.0t

1 2 3 4 5 6 7 8 9

10 11 12 13 14 15 16

Glass epoxy board

3.5 0.5

2.54

P 2.54 × 8 = 20.32

KMPDA0273EA

16-element Si photodiode arrays

S11212 series

S11212-321

-0.3

25.4

1.0 0.15

P1.575 × 15 = 23.625

1.575

1.2⁺^-0⁰^.2^.3

1.36

Active area

1.175 × 2.0

Photodiode chip

GOS ceramic 1.3t

1 2 3 4 5 6 7 8 9

10 11 12 13 14 15 16

Glass epoxy board

3.5 0.5

2.54

P 2.54 × 8 = 20.32

KMPDA0274EA

S11212-421

-0.3

25.4

1.0 0.15

P1.575 × 15 = 23.625

1.575

1.2⁺^-0⁰^.2^.3

0.75

Active area

1.175 × 2.0

Phosphor sheet 0.3t

Photodiode chip

1 2 3 4 5 6 7 8 9

10 11 12 13 14 15 16

Glass epoxy board

3.5 0.5

2.54

P 2.54 × 8 = 20.32

KMPDA0275EA

16-element Si photodiode arrays

S11212 series

Lineup of Si photodiode arrays for X-ray non-destructive inspection

Number of Element pitch

elements (mm)

Element size

(mm)

Board size

(mm)

Suitable X-ray

energy

Scintillator

Type no.

Photo

S11212-021*

25.4 (W) 20.0 (H)

None*

S11299-021*

S11212-121

S11299-121

S11212-321

S11299-321

S11212-421

S11299-421

25.4 (W) 10.2 (H)

25.4 (W) 20.0 (H)

Csl(TI)

10.2

20.0

25.4 (W)

(H)

1.575

1.175 (W) 2.0 (H)

High-energy

GOS ceramic

25.4 (W) 10.2 (H)

25.4 (W) 20.0 (H)

Phosphor

sheet

Low-energy

25.4 (W) 10.2 (H)

These photodiode arrays as they are do not function as X-ray detectors. Appropriate scintillators or phosphor sheets should be added at

user’s side.

The S11212/S11299 series are also compatible with other scintillators than those

listed in the above table (custom made devices). Please consult our sales ofﬁce.

Combination examples (for dual energy imaging)

Dual energy imaging is a technique that acquires and superimposes two types of data in a single scan by using X-rays at two different

energy levels (high energy and low energy). Two photodiode arrays with scintillators are used: one at the upper stage and the other at

the lower stage. The upper stage is used for low energy detection, and the lower stage for high energy detection. Arranging two or more

of these devices in a row also forms a line sensor for dual energy imaging.

X-ray

This combination uses the S11212 series in both upper

and lower stages.

Upper stage:

low-energy photodiode array

· [Upper stage] S11212-421 + [Lower stage] S11212-121

· [Upper stage] S11212-421 + [Lower stage] S11212-321

Lower stage:

high-energy photodiode array

This combination uses the S11212 series in the upper

stage and the S11299 series in the lower stage

X-ray

Upper stage:

low-energy photodiode array

· [Upper stage] S11212-421 + [Lower stage] S11299-121

· [Upper stage] S11212-421 + [Lower stage] S11299-321

Lower stage:

high-energy photodiode array

Note: For details on the S11299 series, refer to the S11299 series datasheet.

16-element Si photodiode arrays

S11212 series

Information described in this material is current as of May, 2012.

Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact

us for the delivery specification sheet to check the latest information.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KMPD1127E03 May 2012 DN

S11212_15 [HAMAMATSU]

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