S11153-01MT_15 [HAMAMATSU]

Photo IC diode;


型号：	S11153-01MT_15
厂家：	HAMAMATSU CORPORATION
描述：	Photo IC diode
文件：	总6页 (文件大小：236K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Photo IC diode

S11153-01MT

Wide operating temperature: -40 to +105 °C

The S11153-01MT photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip.

Almost only the visible range can be measured by ﬁnding the difference between the two output signals in the internal current

ampliﬁer circuit. Compared to the previous type, the S11153-01MT has a wide operating temperature range (-40 to +105 °C).

Features

Applications

Wide operating temperature: -40 to +105 °C

Automotive illuminance sensor

Spectral response close to human eye sensitivity

Energy-saving sensor for TVs, etc.

Various types of light level measurement

Lower output-current variation compared with

phototransistors

Excellent linearity

Low output deviation by different color temperature

light source

Suitable for lead-free reﬂow (RoHS compliance)

Absolute maximum ratings (Ta=25 °C)

Parameter

Reverse voltage

Symbol

Condition

Value

-0.5 to +12

Unit

Photocurrent

Forward current

Power dissipation*¹

Operating temperature

Storage temperature

Reflow soldering conditions*³

°C

Topr

Tstg

Tsol

300

-40 to +105

-40 to +125

No dew condensation*²

Peak temperature 250 °C max., two times

*1: Power dissipation decreases at a rate of 3.0 mW/°C above Ta=25 °C.

*2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew

condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and

reliability.

*3: JEDEC level 4

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response range

Peak sensitivity wavelength

Dark current

Symbol

Condition

Min.

Typ.

300 to 820

Max.

495

Unit

λp

560

1.0

VR=5 V

VR=5 V, 2856 K, 100 lx

Photocurrent

325

μA

10 to 90%, VR=7.5 V

RL=10 kΩ, λ=560 nm

90 to 10%, VR=7.5 V

RL=10 kΩ, λ=560 nm

Rise time*⁴

6.0

2.5

Fall time*⁴

www.hamamatsu.com

Photo IC diode

S11153-01MT

*4: Rise/fall time measurement method

Pulsed light

from LED

(λ=560 nm)

2.5 V

90 %

V^O

10 %

0.1 μF

7.5 V

V^O

Load

resistance RL

KPICC0041EA

Photocurrent vs. illuminance

Spectral response

(Typ. Ta=25 °C, VR=5 V, 2856 K)

(Typ. Ta=25 °C, VR=5 V)

Human eye sensitivity

10 mA

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

1 mA

100 μA

10 μA

S11153-01MT

1 μA

0.1

100 nA

0.1

100

1000

10000

200

400

600

800

1000

1200

Illuminance (lx)

Wavelength (nm)

KPICB0157EB

KPICB0158EB

Photo IC diode

S11153-01MT

Photocurrent vs. ambient temperature

Rise/fall times vs. load resistance

(Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V)

1.4

1.2

1.0

1000

100

0.8

0.6

0.1

-25

100

1 k

10 k

100 k

1 M

Ambient temperature (°C)

Load resistance (Ω)

KPICB0115EA

* Normalized photocurrent 1 at Ta=25 °C

KPICB0165EA

Directivity

(Typ. Ta=25 °C, tungsten lamp)

0°

10°

20°

30°

40°

50°

60°

70°

60°

70°

X direction

80°

90°

80°

Y direction

X direction

90°

20 40 60 80 100

100 80 60 40 20

Relative sensitivity (%)

KPICB0159EA

Photo IC diode

S11153-01MT

Block diagram

Photodiode

for signal detection

The photo IC diode must be reverse-biased so

that a positive potential is applied to the cathode.

To eliminate high-frequency components, we rec-

Photodiode

for signal offset

ommend placing a load capacitance C in parallel

Cathode

with load resistance R as a low-pass ﬁlter.

Cut-off frequency fc

2π CL RL

Internal protection

resistance

(approx. 150 Ω)

The drawing surrounded

by the dotted line shows

a schematic diagram of

the photo IC.

Reverse bias

power supply

Current amp

(approx. 30000 times)

Anode

C^L

Vout

KPICC0132EA

Dimensional outline (unit: mm)

3.5 0.2

Photosensitive area

0.32 × 0.46

3.2

0.8

0.5

1.0

Silicone resin

ϕ2.4

4.5

1.5

ϕ1.0

1.5

0.8 0.2

3.1

Recommended land pattern

Cathode

Anode

Tolerance unless otherwise

noted: 0.1

Chip position accuracy with

respect to package center

X, Y 0.2

Electrode

Packing: reel (1000 pcs/reel)

KPICA0087EB

Photo IC diode

S11153-01MT

Operating voltage, output characteristics

Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure

1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7

V (±10%).

To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage V_R

when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)].

V_R= Vbe(ON) + I_L× Rin ............ (1)

The photodiode’s reverse voltage (V_R) is expressed by Equation (2) according to the voltage drop across the external resistor. This is

indicated as load lines in Figure 2.

V_R= Vcc - I_L× R_L............ (2)

In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum

detectable light level can be speciﬁed. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (R_L),

adjust them according to the operating conditions.

Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately

0.1%/°C.

[Figure 1] Measurement circuit example

(external resistor)

Rin=150 Ω 20%

(internal protection resistor)

Vcc

Photo IC

diode

KPICC0128EC

[Figure 2] Photocurrent vs. reverse voltage

(Typ. Ta=25 °C)

1100 lx

Internal protection resistance

Rin: Approx. 150 Ω

1000 lx

800 lx

Saturation region

Approx. 1260 lx

600 lx

Load line

Vcc=5 V, RL=1 kΩ

Saturation region

Approx. 650 lx

450 lx

Load line

Vcc=3 V, R =1 kΩ

220 lx

Reverse voltage (V)

Rising voltage

KPICB0160EA

Photo IC diode

S11153-01MT

Measured example of temperature profile with our hot-air reflow oven for product testing

300 °C

250 °C max.

200 °C

190 °C

170 °C

Preheat

80 to 110 s

Soldering

70 s max.

Time

KPICB0173EA

∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a

humidity of 60% or less, and perform soldering within 72 hours.

∙ The effect that the product receives during reﬂow soldering varies depending on the circuit board and reﬂow oven that are used.

Before actual reﬂow soldering, check for any problems by testing out the reﬂow soldering methods in advance.

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Disclaimer

∙ Surface mount type products

Information described in this material is current as of August, 2015.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KPIC1091E07 Aug. 2015 DN

S11153-01MT_15 [HAMAMATSU]

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