S10355-01_15 [HAMAMATSU]

Si photodiodes;


型号：	S10355-01_15
厂家：	HAMAMATSU CORPORATION
描述：	Si photodiodes
文件：	总4页 (文件大小：152K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Si photodiodes

S10355-01

S10356-01

Back-illuminated type photodiodes employing

CSP structure

The S10355-01 and S10356-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device

edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format.

Features

Applications

Allows multiple devices to be arranged in a tiled format

Tiled format minimizes the dead area between photo-

diodes and covers a large detection area.

General industrial mesurement

X-ray inspection system

Patterned electrodes for signal readout terminals

Lead pins and solder balls are available as signal read-

out terminals on the underside of the package.

Please contact us for details.

Easy coupling to scintillator

Maximizes the optical coupling efﬁciency to a scintil-

lator since no wire leads exist on the photosensitive

surface, making these photodiodes ideal as detectors

for X-ray non-destructive inspection systems.

Structure

Parameter

Package size

Chip size

S10355-01

7.52 × 7.52

7.37 × 7.37

6.97 × 6.97

S10356-01

3 × 3

2.8 × 2.8

2.5 × 2.5

Unit

Photosensitive area

Absolute maximum ratings

Parameter

Reverse voltage

Operating temperature

Storage temperature

Symbol

VR max

Topr

Tstg

Tsol

Condition

Ta=25 °C

Value

-20 to +60

Unit

°C

-20 to +80

Reflow soldering condition*

Peak temperature 240 °C (see page 3)

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

* JEDEC level 5a

Electrical and optical characteristics (Ta=25 °C)

S10355-01

Typ.

S10356-01

Typ.

Parameter

Symbol

Condition

Unit

Min.

Max.

Min.

Max.

Spectral response range

Peak sensitivity wavelength

λp

400 to 1100

960

400 to 1100

960

A/W

μA

0.55

0.35

0.3

λ=960 nm

λ=540 nm

100 lx, 2856 K

VR=10 mV

0.55

0.35

0.59

0.37

0.1

0.59

0.37

0.01

Photo sensitivity

Short circuit current

Dark current

Isc

VR=0 V, RL=1 kΩ

λ=650 nm

VR=0 V, f=10 kHz

Rise time

μs

Terminal capacitance

500

700

www.hamamatsu.com

Si photodiodes

S10355-01, S10356-01

Spectral response

Sensitivity uniformity (S10356-01)

(Ta=25 °C, λ=690 nm, spot light size 20 µm, VR=0 V)

0.7

0.6

100

0.5

0.4

0.3

0.2

0.1

400

500

600

700

800

900 1000 1100

1000

2000

Wavelength (nm)

Position on photosensitive area (µm)

KSPDB0288ED

KSPDB0294EA

Dimensional outlines (unit: mm)

S10355-01

7.52 0.1

(7.37)

Photosensitive area

Photosensitive

surface

Glass epoxy

P3.085 × 2=6.17

Cathode

Anode

(8 ×) 1.0

(Au pattern)

KSPDA0206EA

Si photodiodes

S10355-01, S10356-01

S10356-01

3.0 0.1

(2.8)

Photosensitive area

Photosensitive

surface

Glass epoxy

P1.1 × 2 = 2.2

Cathode

Anode

(8 ×) 0.6

(Au pattern)

0.1

KSPDA0175ED

Example of measured temperature profile with our hot-air reflow oven for product testing

These products support lead-free soldering. After unpacking, store them in an environment at a temperature of 30 °C or less and a

humidity of 60% or less, and perform soldering within 24 hours.

300 °C

240 °C max.

220 °C

190 °C

170 °C

Soldering

40 s max.

Preheat

70 to 90 s

Time

KPICB0171EA

Si photodiodes

S10355-01, S10356-01

Related information

www.hamamatsu.com/sp/ssd/doc_en.html

Precautions

∙ Notice

∙ Surface mount type products / Precautions

Technical information

∙ Si photodiode / Application circuit examples

Information described in this material is current as of December, 2013.

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741

China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Cat. No. KSPD1075E09 Dec. 2013 DN

S10355-01_15 [HAMAMATSU]

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