R7518_15 [HAMAMATSU]
PHOTOMULTIPLIER TUBES;
| 型号： | R7518_15 |
| 厂家： | 
HAMAMATSU CORPORATION |
| 描述： | PHOTOMULTIPLIER TUBES |
| 文件： | 总4页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOMULTIPLIER TUBES
R7518
R7518P(For Photon Counting)
High Sensitivity with Low Noise Photocathode
FEATURES
GSpectral Response .................................. 185 nm to 730 nm
GHigh Cathode Sensitivity
Luminous ......................................................... 130 µA/lm
Radiant at 410 nm ............................................. 85 mA/W
GHigh Anode Sensitivity (at 1000 V)
Luminous ......................................................... 1560 A/lm
Radiant at 410 nm ..................................... 10.2 × 105 A/W
GLow Dark Current ....................................................... 0.2 nA
GLow Dark Counts (R7518P) ......................................... 10 s-1
APPLICATIONS
GChemiluminescence Detection
GBioluminescence Detection
GFluorescence Spectrometer
GSO2 Monitor (UV Fluorescence)
SPECIFICATIONS
Figure 1: Typical Spectral Response
TPMSB0177EA
100
GENERAL
Parameter
Description / Value Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
185 to 730
410
nm
nm
10
CATHODE
RADIANT
SENSITIVITY
MateriaI
Minimum Effective Area
Window Material
Low noise bialkali
8 × 24
—
mm
—
UV glass
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Low noise bialkali
Circular-cage
9
—
—
—
QUANTUM
EFFICIENCY
1
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrode
4
6
pF
pF
0.1
11-pin base
JEDEC No. B11-88
45
Base
—
Weight
g
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
-30 to +50
-30 to +50
E678–11A (Sold Separately)
E717–63 (Sold Separately)
E717-74 (Sold Separately)
°C
°C
—
0.01
100
200
300
400
500
600
700
800
SuitabIe Socket Assembly
—
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES
R7518, R7518P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current A
1250
250
0.1
V
V
mA
R7518
for General Purpose
R7518P
for Photon Counting
CHARACTERISTlCS (at 25 °C)
Min.
Typ.
Max.
Min.
Typ.
Max.
Parameter
Cathode Sensitivity
Unit
Quantum Efficiency (at peak wavelength)
Luminous B
Radiant (at peak wavelength)
Blue Sensitivity Index (CS 5-58)
Anode Sensitivity
Luminous C
Radiant at 400 nm
Gain D
Anode Dark Current E
After 30 min Storage in darkness
Anode Dark Counts E
ENI (Equivalent Noise Input) F
Time Response D
—
120
—
29
130
85
—
—
—
—
—
120
—
29
130
85
—
—
—
—
%
µA/lm
mA/W
—
—
10
—
10
1200
—
—
1560
10.2 × 105
1.2 × 107
—
—
—
1200
—
—
1560
10.2 × 105
1.2 × 107
—
—
—
A/lm
A/W
—
—
—
—
0.2
—
2.7 × 10-17
2.0
—
—
—
—
—
0.2
10
2.7 × 10-17
0.5
50
—
nA
s-1
W
Anode Pulse Rise Time G
Electron Transit Time
Transit Time Spread (TTS) H
Anode Current Stability J
Light Hysteresis
—
—
—
2.2
22
1.2
—
—
—
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
—
—
0.1
1.0
—
—
—
—
0.1
1.0
—
—
%
%
Voltage Hysteresis
NOTES
A:Averaged over any interval of 30 seconds maximum.
K:Hysteresis is temporary instability in anode current after light and voltage
are applied.
B:The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856 K. Supply voltage is 150 V between the cathode and all
other electrodes connected together as anode.
C:Measured with the same light source as Note B and with the anode-to-
cathode supply voltage and voltage distribution ratio shown in Table 1 be-
low.
l
l
min.
max.
Hysteresis =
100 (%)
l
i
D:Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
E:Measured at the plateau voltage.
l
max.
l
i
l
min.
TIME
0
5
6
7 (minutes)
F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
TPMSB0002EA
(1)Current Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to
the previous value and the tube is re-illuminated for a minute to measure
the variation.
.
. .
2q ldb G f
S
( )
W
ENI =
where q = Electronic charge. (1.60 × 10-19 coulomb)
ldb = Anode dark current(after 30 minute storage) in amperes.
G = Gain.
f = Bandwidth of the system in hertz. (usually 1 hertz)
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response
G:The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
Table 1:Voltage Distribution Ratio
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
H:The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photo-
cathode is illuminated.
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000 V, K: Cathode, Dy: Dynode, P: Anode
J:
Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
Figure 2: Typical Gain and Anode Dark Current
Figure 3: Typical Time Response
TPMSB0011EA
TPMSB0004EB
108
100
80
60
-5
-6
-7
-8
-9
10
10
10
10
10
107
106
40
20
105
104
103
10
8
6
-10
4
10
102
101
-11
-12
2
1
10
10
300
400
500 600
800 1000
1500
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI vs. Wavelength
Figure 5: Typical EADCI (Equivalent Anode Dark
Current Input) vs. Supply Voltage
-10
10
TPMSB0178EA
TPMSB0233EA
-
10 13
-
10 14
-11
10
-
10 15
-12
10
-
10 16
-13
10
-
10 17
-14
10
100
200
300
400
500
600
700
800
300
400
500 600
800
1000 1200
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Data shown here, which is given from a relation among supply voltage,
anode sensitivity and dark current, serves as a good reference in order
to determine the most suitable supply voltage or its range.
Figure 6: Typical Plateau Data for R7518
Figure 7: Typical Temperature Characteristics
of Dark Count for R7518P
100000TPMSB0229EA
100
TPMSB0015EB
104
WAVELENGTH OF INCIDENT LIGHT: 450 (nm)
90000
90
80
70
60
50
40
30
20
10
0
TEMPERATURE
: 25 (°C)
80000
70000
60000
50000
40000
30000
20000
10000
0
103
102
101
100
SIGNAL+DARK
DARK
-1
-20
10
700 750 800 850 900 950 1000 1050 1100 1150 1200
0
+20
+40
+50
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
PHOTOMULTIPLIER TUBES
R7518, R7518P (For Photon Counting)
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 8: Socket E678-11A (Sold Separately)
28.5 1.5
49
38
8 MIN.
PHOTOCATHODE
DY6
6
DY7
DY5
5
1
7
DY4
DY8
4
8
3
DY3
9 DY9
5
2
10
P
DY2
11
K
DY1
DIRECTION OF LIGHT
29
Bottom View
(Basing Diagram)
32.2 0.5
11 PIN BASE
JEDEC No. B11-88
TACCA0064EA
TPMSA0001EB
Figure 9: D Type Socket Assembly E717-63 (Sold Separately)
Figure 10: D Type Socket Assembly E717-74 (Sold Separately)
HOUSING
(INSULATOR)
SOCKET
PIN No.
10
PMT
P
SOCKET
5
PMT
P
SIGNAL
PIN No.
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
OUTPUT (A)
10
GND (G)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
POWER SUPPLY GND
AWG22 (BLACK)
DY9
9
8
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
C3
C2
C1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
9
8
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
38.0 0.3
49.0 0.3
26.0 0.2
32.0 0.5
7
7
6
29.0 0.3
6
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
5
5
A
4
K
G
22.4 0.2
4
31.0 0.5
3
HOUSING
(INSULATOR)
3
0.7
2
4- 2.8
2
1
POTTING
COMPOUND
R13
K
DY1
K
1
-HV (K)
11
-HV
11
* "Wiring diagram at above applies when -HV is sup-
plied." To supply +HV,connect the pin "G" to+HV, and
the pin "K" to the GND. Refer to "(d) d-2" on page 87
for the connection method.
AWG22 (VIOLET)
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series
DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
TPMS1060E03
MAY 2010. IP
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