R580_15 [HAMAMATSU]
For Scintillation Counting and High Energy Physics 38 mm (1-1/2 lnch) Diameter, 10-stage, Bialkali Photocathode, Head-on Type;![R580_15](http://pdffile.icpdf.com/pdf2/p00352/img/icpdf/R580-15_2164393_icpdf.jpg)
型号: | R580_15 |
厂家: | ![]() |
描述: | For Scintillation Counting and High Energy Physics 38 mm (1-1/2 lnch) Diameter, 10-stage, Bialkali Photocathode, Head-on Type |
文件: | 总2页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PHOTOMULTIPLIER TUBE
R580
For Scintillation Counting and High Energy Physics
38 mm (1-1/2 lnch) Diameter, 10-stage, Bialkali Photocathode, Head-on Type
GENERAL
Parameter
Description
300 to 650
Unit
nm
nm
—
mm
—
Spectral Response
Wavelength of Maximum Response
420
Bialkali
34
Borosilicate glass
Linear focused
10
Material
Minimum Effective Area
Photocathode
Window Material
Dynode
—
—
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
pF
pF
°C
°C
—
Direct Interelectrode
Capacitances
Operating Ambient Temperature
Storage Temperature
Base
3
7
-30 to +50
-30 to +50
JEDEC No. B12-43
E678-12A (supplied)
—
Suitable Socket
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1750
350
Unit
V
V
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current
0.1
mA
CHARACTERISTICS (at 25 °C)
Parameter
Min.
70
—
9
Typ.
95
88
Max.
—
—
Unit
µA/lm
mA/W
—
Luminous (2856 K)
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Cathode Sensitivity
11
—
Quantum Efficiency at 420 nm
Luminous (2856 K)
—
10
—
—
—
—
—
—
27
—
—
—
20
—
—
—
—
%
A/lm
—
nA
ns
ns
ns
mA
Anode Sensitivity
Gain
100
1.1 × 106
3
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread (FWHM)
Pulse Linearity ( 2 % deviation) *
2.7
37
4.5
150
Time Response
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
* Measured with the special voltage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Electrodes
Ratio
2
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250 V, K : Cathode,
Dy : Dynode, P : Anode
SPECIAL VOLTAGE DlSTRlBUTlON RATlO FOR PULSE LINEARITY MEASUREMENT
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Electrodes
Ratio
2
1
1
1
1
1
1.2
1.5
2.2
3.6
0.04
3
Parallel Capacitors in µF
0.01
0.02
0.06
SuppIy Voltage :1500 V
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R580
Figure 1: Typical Spectral Response
Figure 2: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHB0204EA
38
1
100
FACEPLATE
34 MIN.
PHOTO-
CATHODE
10
CATHODE
RADIANT
SENSITIVITY
1
P
DY10
7
6
DY9
DY8
5
8
DY7
DY6
4
3
9
QUANTUM
EFFICIENCY
10
DY5
DY4
11
K
2
DY3
DY2
1
12
12 PIN BASE
JEDEC
DY1
0.1
No. B12-43
BOTTOM VIEW
(BASING DIAGRAM)
0.01
200
400
600
800
37.3 0.5
WAVELENGTH (nm)
TPMHA0121EA
Figure 3: Accessories (Unit: mm)
Socket E678-12A
D type Socket Assembly E2183-500
(Sold separately)
(Supplied)
47
SOCKET
PIN No.
PMT
SIGNAL OUTPUT
RG-174/U (BLACK)
BNC CONNECTOR
40
6
17
P
C3
R13
R12
R11
R10
R9
DY10
7
5
C2
C1
52.0 0.5
34.0 0.3
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
8
R1: 10 kΩ
R2 to R13: 330 kΩ
C1 to C3: 10 nF
C4: 4.7 nF
4
HOUSING
(INSULATOR)
9
R8
3
2- 3.2
POTTING
R7
COMPOUND
10
2
R6
34
R5
11
1
R4
R3
C4
R1
-HV
R2
K
SHIELD CABLE (GRAY)
SHV CONNECTOR
12
*
E2183-15 (E2183-500 without connectors) is also available.
** E2183-500 is for the voltage distribution ratio. E2183-501 for
the special voltage distribution ratio is also available.
TACCA0166EC
TACCA0009EB
* HAMAMATSU also provides C9525 series bench-top type and C9619 series module type high voltage power supplies.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K.
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
TPMH1100E04
JUN. 2014 IP
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: info@hamamatsu.it
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn
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